Report of the Meeting on Technological Options and Opportunities for Development: the Aluminium and Tin Industries in Latin America and the Caribbean = Informe de la Reunión sobre Opciones Tecnológicas y Oportunidades para el Desarrollo: las Industrias del Aluminio y el Estaño en América Latina y el Caribe

Contiene discurso de inauguración, presentación y comentario de los documentos presentados y recomendaciones de la reunión en que se trataron las opciones tecnológicas para el desarrollo de las industrias del aluminio en América Latina y el Caribe.

Latin American supply and major world market demand for the principal metals, 1970-1990: aluminium, copper, iron, nickel, lead, zinc, tin

Includes bibliography

The tin industry of Latin America: technological options and opportunities for growth

Includes bibliography

Desenvolvimento de uma Plataforma de Software para a Modelagem Digital de Terrenos baseada em TIN

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Links of the transnational corporations with the tin industry in Bolivia = Vinculaciones de las empresas transnacionales con la industria del estaño en Bolivia

Includes bibliography

Desenvolvimento de uma plataforma de software para a modelagem digital de terrenos baseada em TIN

Topographical surfaces can be represented with a good degree of accuracy by means of maps. However these are not always the best tools for the understanding of more complex reliefs. In this sense, the greatest contribution of this work is to specify and to implement the architecture of an opensource software system capable of representing TIN (Triangular Irregular Network) based digital terrain models. The system implementation follows the object oriented programming and generic paradigms enabling the integration of various opensource tools such as GDAL, OGR, OpenGL, OpenSceneGraph and Qt. Furthermore, the representation core of the system has the ability to work with multiple topological data structures from which can be extracted, in constant time, all the connectivity relations between the entities vertices, edges and faces existing in a planar triangulation what helps enormously the implementation for real time applications. This is an important capability, for example, in the use of laser survey data (Lidar, ALS, TLS), allowing for the generation of triangular mesh models in the order of millions of points.

Extração de contornos de telhado de edifícios no espaço-objeto baseada em snakes e programação dinâmica a partir de TIN/laser e imagens aéreas de alta resolução

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Protective film growth on tin in perchlorate and citric acid electrolytes

Voltammetry has been employed to study the influence of systematic additions of citric acid on the E-I curves of Tin in 0.5 M NaClO4, in order to verify the film growth in the presence of the organic acid and the inhibition of the pitting corrosion of the metal. The minimum concentration of the organic acid needed to change the GI curves is 10(-2) M, in the pH range 1.0-4.0. At pH 3.0 and 4.0, the scan rate dependence on current density, in the potential region of formation and reduction of the film, showed that in a first stage adsorption occurs. In a second stage, the v(1/2) dependence found can he explained by ohmic resistance control. The formation of tin/citric acid complexes, 10(-2) M, is suggested. The pitting inhibition may be due to the formation of a mixed layer of tin in citric acid concentrations higher than 10(-2) oxide and tin citrate complexes on the electrode surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Translucent tin dioxide ceramics obtained by natural sintering

Dense SnO2-based ceramics (relative density >95%) have been obtained by natural sintering at a moderate temperature (less than or equal to 1300 degrees C) with the help of a small amount of manganese, Further thermal treatments above 1500 degrees C result in grain growth and transport of manganese toward the sample surface. If the ceramic is embedded inside alumina powder, the diffusion of Mn out of the sample and into alumina during such heat treatments leads to a manganese-free body (<40 ppm) which is translucent. The transmission in the visible region depends on sample thickness; 61% was achieved for a 0.05 mm thick sample.

Semiautomatic object-space road extraction combining a stereoscopic image pair and a TIN-Based DTM

In this letter, a semiautomatic method for road extraction in object space is proposed that combines a stereoscopic pair of low-resolution aerial images with a digital terrain model (DTM) structured as a triangulated irregular network (TIN). First, we formulate an objective function in the object space to allow the modeling of roads in 3-D. In this model, the TIN-based DTM allows the search for the optimal polyline to be restricted along a narrow band that is overlaid upon it. Finally, the optimal polyline for each road is obtained by optimizing the objective function using the dynamic programming optimization algorithm. A few seed points need to be supplied by an operator. To evaluate the performance of the proposed method, a set of experiments was designed using two stereoscopic pairs of low-resolution aerial images and a TIN-based DTM with an average resolution of 1 m. The experimental results showed that the proposed method worked properly, even when faced with anomalies along roads, such as obstructions caused by shadows and trees.

The Structural and Electronic Properties of Tin Oxide Nanowires: An Ab Initio Investigation

We performed an ab initio investigation on the properties of rutile tin oxide (SnOx) nanowires. We computed the wire properties determining the equilibrium geometries, binding energies, and electronic band structures for several wire dimensions and surface facet configurations. The results allowed us to establish scaling laws for the structural properties, in terms of the nanowire perimeters. The results also showed that the surface states control most of the electronic properties of the nanowires. Oxygen incorporation in the nanowire surfaces passivated the surface-related electronic states, and the resulting quantum properties and scaling laws were fully consistent with electrons confined inside the nanowire. Additionally, oxygen incorporation in the wire surfaces generated an unbalanced concentration of spin up and down electrons, leading to magnetic states for the nanowires.

UV-Ozone Generation from Modified High Intensity Discharge Mercury Vapor Lamps for Treatment of Indium Tin Oxide Films

In a homemade UV-Ozone generator, different ignition tubes extracted from HID mercury vapor lamps were investigated, namely: 80, 125, 250 and 400 watts. The performance of the generator in function of the type of the ignition lamp was monitored by the measurements of the ozone concentration and the temperature increment. The results have shown that the 400 W set up presented the highest ozone production, which was used in the treatment of indium tin oxide (ITO) films. Polymer light emitting diodes were assembled using ITO films, treated for 10, 20 and 30 min, as an anode. The overall results indicate improvement of the threshold voltage (reduction) and electroluminescence of these devices.

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN metal gate showed a larger GIDL due to the different gate oxide thickness and a reduced metal gate work function. In addition, replacing SiON by a high-k dielectric (HfSiON) results for nMuGFETs in a decrease of the GIDL On the other hand, the impact of the gate dielectric on the GIDL for p-channel MuGFETs is marginal. The effect of the channel width was also studied, whereby narrow fin devices exhibit a reduced GIDL current in spite of the larger vertical electric field expected for these devices. Finally, comparing the effect of the channel type, an enhanced GIDL current for pMuGFET devices was observed. (C) 2011 Elsevier Ltd. All rights reserved.