Controlled photoluminescence from self-assembled semiconductor-metal quantum dot hybrid array films

Thin films of hybrid arrays of cadmium selenide quantum dots and polymer grafted gold nanoparticles have been prepared using a BCP template. Controlling the dispersion and location of the respective nanoparticles allows us to tune the exciton-plasmon interaction in such hybrid arrays and hence control their optical properties. The observed photoluminescence of the hybrid array films is interpreted in terms of the dispersion and location of the gold nanoparticles and quantum dots in the block copolymer matrix.

Synthesis and characterization of Pd(0), PdS, and Pd@PdO core-shell nanoparticles by solventless thermolysis of a Pd-thiolate cluster

Colloids of palladium nanoparticles have been prepared by the solvated metal atom dispersion (SMAD) method. The as-prepared Pd colloid consists of particles with an average diameter of 2.8 +/- 0.1 nm. Digestive ripening of the as-prepared Pd colloid, a process involving refluxing the as-prepared colloid at or near the boiling point of the solvent in the presence of a passivating agent, dodecanethiol resulted in a previously reported Pd-thiolate cluster, Pd(SC12H25)(2)](6) but did not render the expected narrowing down of the particle size distribution. Solventless thermolysis of the Pd-thiolate complex resulted in various Pd systems such as Pd(0), PdS, and Pd@PdO core-shell nanoparticles thus demonstrating its versatility. These I'd nanostructures have been characterized using high-resolution electron microscopy and powder X-ray diffraction methods. (C) 2010 Elsevier Inc. All rights reserved.

Doping Transition Metal (Mn or Cu) Ions in Semiconductor Nanocrystals

Following growth doping strategy and using dopant oxides nanocrystals as dopant sources, we report here two different transition-metal ions doped in a variety of group II-VI semiconductor nanocrystals. Using manganese oxide and copper oxide nanocrystals as corresponding dopant sources, intense photoluminescence emission over a wide range of wavelength has been observed for different host nanocrystals. Interestingly, this single doping strategy is successful in providing such highly emissive nanocrystals considered here, in contrast with the literature reports that would suggest synthesis strategies to be highly specific to the particular dopant, host, or both. We investigate and discuss the possible mechanism of the doping process, supporting the migration of dopant ions from dopant oxide nanocrystals to host nanocrystals as the most likely scenario.

Impact of energy quantisation in single electron transistor island on hybrid complementary metal oxide semiconductor-single electron transistor integrated circuits

For the first time, the impact of energy quantisation in single electron transistor (SET) island on the performance of hybrid complementary metal oxide semiconductor (CMOS)-SET transistor circuits has been studied. It has been shown through simple analytical models that energy quantisation primarily increases the Coulomb Blockade area and Coulomb Blockade oscillation periodicity of the SET device and thus influences the performance of hybrid CMOS-SET circuits. A novel computer aided design (CAD) framework has been developed for hybrid CMOS-SET co-simulation, which uses Monte Carlo (MC) simulator for SET devices along with conventional SPICE for metal oxide semiconductor devices. Using this co-simulation framework, the effects of energy quantisation have been studied for some hybrid circuits, namely, SETMOS, multiband voltage filter and multiple valued logic circuits. Although energy quantisation immensely deteriorates the performance of the hybrid circuits, it has been shown that the performance degradation because of energy quantisation can be compensated by properly tuning the bias current of the current-biased SET devices within the hybrid CMOS-SET circuits. Although this study is primarily done by exhaustive MC simulation, effort has also been put to develop first-order compact model for SET that includes energy quantisation effects. Finally, it has been demonstrated that one can predict the SET behaviour under energy quantisation with reasonable accuracy by slightly modifying the existing SET compact models that are valid for metallic devices having continuous energy states.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

A note on transient photocurrents at semiconductor electrodes

The imprint of the changing surface concentration of minority carriers in photocurrent transients is marginalized in “switch off” transients as compared to “switch on” transients. When the surface level is situated close to either one of the band edges, it is shown that in principle it must be possible to obtain the energy of the surface level from “switch off” transients.The time constants for the “switch on” and “switch off” cases behave differently with potential. While in “switch off”, transient plots, the magnitude of the slope decreases monotonically with increasing band bending potentials; for the “switch on” however, though it decreases and is identical to “switch off” initially, beyond a certain increase in potential the magnitude of the slope shows an increase.

Thin film amorphous semiconductor microwave switches

Microwave switches operating in the X band were designed and fabricated using amorphous chalcogenide semiconductors of composition GexTeyAsz. Threshold devices were shown to operate as microwave modulators at modulation frequencies of up to 100 MHz. No delay time was observed at the highest frequency although the modulation efficiency decreased above 10 MHz owing to the finite recovery time which was approximately 0.3 × 10−8s. The devices can also be used as variolossers, the insertion loss being 0.5 dB in the OFF state and increasing on switching from 5 dB at 1 mA device current to 18 dB at 100 mA.The behaviour of the threshold switches can be explained in terms of the formation of a conducting filament in the ON state with a constant current density of 2 × 104Acm−2 that is shunted by the device capacitance. The OFF state conductivity σ varies as ωn (0.5 < n < 1) which is characteristic of hopping in localized states. However, there was evidence of a decrease in n or a saturation of the conductivity at high frequencies.As a result of phase separation memory switches require no holding current in the ON state and may be used as novel latching semiconductor phase-shifters.

H I deficiency in cluster spiral galaxies - Dependence on galaxy size

From the available H I data on spiral galaxies in three rich Abell clusters and the Virgo Cluster, it is shown that galaxies with medium to large optical sizes tend to be more severely deficient in atomic hydrogen than the small galaxies. This is so both in terms of the fractional number of galaxies that are deficient and the amount of gas lost by a galaxy. The fraction of H I-deficient galaxies increases with size over most of the size range, saturating or dropping only for the largest galaxies. A comparative study is made of various currently accepted gas removal mechanisms, namely those which are a result of galaxy-intracluster medium interactions, e.g., ram pressure stripping, as well as those due to galaxy-galaxy interactions, i.e., collisions and tidal interactions. It is shown that, with the exception of tidal interactions, all of these mechanisms would produce a size dependence in H I deficiency that is the opposite of that observed. That is, the gas in the largest galaxies would be the least affected by these mechanisms. However, if there is significant mass segregation, these processes may give the trends observed in the size dependence of H I deficiency.

Surface recombination at semiconductor electrodes: a single level study

The recombination and the faradaic fluxes are shown to be sensitive to the location of a single level recombination center, when it is located near the band edges. As the surface level is shifted deeper into the band gap from either of the band edges, the back emission terms are dominated by electron capture and hole capture terms, and the occupancy of the surface level is no longer determined by its location in the band gap. However, when one of the back emission terms determines the surface state occupancy, it is shown that there exists a simple relation between the value of the surface level and the recombination and the faradaic fluxes respectively. Expressions to this effect are derived and verified in the case of the recombination flux, which characterized by the potential at which it attains its maximum value. For the faradaic flux the results are qualitative.

Computational Methods for Studies of Quantum Dots and Boson Condensates

This thesis presents ab initio studies of two kinds of physical systems, quantum dots and bosons, using two program packages of which the bosonic one has mainly been developed by the author. The implemented models, \emph{i.e.}, configuration interaction (CI) and coupled cluster (CC) take the correlated motion of the particles into account, and provide a hierarchy of computational schemes, on top of which the exact solution, within the limit of the single-particle basis set, is obtained. The theory underlying the models is presented in some detail, in order to provide insight into the approximations made and the circumstances under which they hold. Some of the computational methods are also highlighted. In the final sections the results are summarized. The CI and CC calculations on multiexciton complexes in self-assembled semiconductor quantum dots are presented and compared, along with radiative and non-radiative transition rates. Full CI calculations on quantum rings and double quantum rings are also presented. In the latter case, experimental and theoretical results from the literature are re-examined and an alternative explanation for the reported photoluminescence spectra is found. The boson program is first applied on a fictitious model system consisting of bosonic electrons in a central Coulomb field for which CI at the singles and doubles level is found to account for almost all of the correlation energy. Finally, the boson program is employed to study Bose-Einstein condensates confined in different anisotropic trap potentials. The effects of the anisotropy on the relative correlation energy is examined, as well as the effect of varying the interaction potential.}

Structure of a cyclic water tetramer in a nucleotide crystal host and a hypothetical model for water cluster growth

Structure of a cyclic water tetramer in channels (pores) formed by self-assembly of N6-methyl-5'-AMP center dot Na-2 molecules is described and a hypothetical model is proposed for growth of water clusters. (C) 2010 Elsevier B.V. All rights reserved.

Activation barriers for d.c. conductivity in ionic glasses: Classical calculations using the small-cluster approximation

A small-cluster approximation has been used to calculate the activation barriers for the d.c. conductivity in ionic glasses. The main emphasis of this approach is on the importance of the hitherto ignored polarization energy contribution to the total activation energy. For the first time it has been demonstrated that the d.c. conductivity activation energy can be calculated by considering ionic migration to a neighbouring vacancy in a smali cluster of ions consisting of face-sharing anion polyhedra. The activation energies from the model calculations have been compared with the experimental values in the case of highly modified lithium thioborate glasses.

Compressive tidal heating of a disk galaxy in a rich cluster

The restricted three-body method is used to model the effect of the mean tidal field of a cluster of galaxies on the internal dynamics of a disk galaxy falling into the cluster for the first time. In the model adopted the galaxy experiences a tidal field that is compressive within the core of the cluster. The planar random velocities of all components in the disk increase after the galaxy passes through the core of the cluster. The low-velocity dispersion gas clouds experience a relatively larger increase in random velocity than the hotter stellar components. The increase in planar velocities results in a strong anisotropy between the planar and vertical velocity dispersions. It is argued that this will make the disk unstable to the 'fire-hose instability' which leads to bending modes in the disk and which will thicken the disk slightly. The mean tidal fields in rich clusters were probably stronger during the epoch of cluster formation and relaxation than they are in present-day relaxed clusters.