Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor
| Data(s) |
01/10/1991
|
|---|---|
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/34053/1/Department_of_Physics_%28a%29_and.pdf Rabinal, MK and Asokan, S and Godazaev, MO and Mamedov, NT and Gopal, ESR (1991) Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor. In: Physica Status Solidi B, 167 (2). K97-K100. |
| Publicador |
John Wiley & Sons |
| Relação |
http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221670242/abstract http://eprints.iisc.ernet.in/34053/ |
| Palavras-Chave | #Instrumentation and Applied Physics (Formally ISU) #Physics |
| Tipo |
Editorials/Short Communications PeerReviewed |
