Escape of high mass ions due to initial thermal energy and its implications for axially symmetric RF ion trap mass analyzer design

This paper investigates the loss of high mass ions due to their initial thermal energy in ion trap mass analyzers. It provides an analytical expression for estimating the percentage loss of ions of a given mass at a particular temperature, in a trap operating under a predetermined set of conditions. The expression we developed can be used to study the loss of ions due to its initial thermal energy in traps which have nonlinear fields as well as those which have linear fields. The expression for the percentage of ions lost is shown to be a function of the temperature of the ensemble of ions, ion mass and ion escape velocity. An analytical expression for the escape velocity has also been derived in terms of the trapping field, drive frequency and ion mass. Because the trapping field is determined by trap design parameters and operating conditions, it has been possible to study the influence of these parameters on ion loss. The parameters investigated include ion temperature, magnitude of the initial potential applied to the ring electrode (which determines the low mass cut-off), trap size, dimensions of apertures in the endcap electrodes and RF drive frequency. Our studies demonstrate that ion loss due to initial thermal energy increases with increase in mass and that, in the traps investigated, ion escape occurs in the radial direction. Reduction in the loss of high mass ions is favoured by lower ion temperatures, increasing low mass cut-off, increasing trap size, and higher RF drive frequencies. However, dimensions of the apertures in the endcap electrodes do not influence ion loss in the range of aperture sizes considered. (C) 2010 Elsevier B.V. All rights reserved.

Process-kinetics in facing targets sputtering of multi-component oxide thin films

The kinetics of the processes in facing targets sputtering of multicomponent oxide films is presented. The novel configuration of the process exhibits an enhanced ionization efficiency. Discharge diagnostics performed using optical emission spectroscopy revealed strong dependence of plasma parameters on process conditions. Numerical simulation based on thermalization and diffusion of sputtered atoms has been performed to estimate the transport efficiency in off-axis mode. Composition, structure and epitaxial quality of YBa2Cu3O7-x films prepared was found to be strongly dependent on atomic flux ratios (of Cu/Y and Ba/Y) arriving at the substrate, resputtering effect and phase stability of YBa2Cu3O7-x These studies have been shown to be useful in understanding the complex processes that occur in sputtering of multicomponent films. (C) 1999 Elsevier Science S.A. All rights reserved.

Studies on the optimisation of unbalanced magnetron sputtering cathodes

The optimisation is reported on the design of unbalanced magnetron (UBM) sputtering cathodes. For the study, a planar circular cathode backed by a double-coil electromagnet (compatible for a 100 mm diameter target) was developed. The variation of the structure and strength of the magnetic field in front of the target was investigated for different current combinations in the electromagnetic coils, and its effect on the sputtering process was analysed. The observations on the magnetic field geometry revealed some interesting features, such as the balancing point of the fields along the axis (null-point), and the zero axial region over the target surface (B-z = 0 ring). The positions of both could be controlled by adjusting the ratio of the electric current in the coils. The magnetic field null-point could be used as a reference for the region of homogeneous film growth. The B-z = 0 ring was the location where the glow discharge concentrated (or where the maximum target erosion occurred). The diameter of the ring determined the area covered by the discharge and thus the sputtering efficiency. The optimum substrate position can be fixed according to the position of the null-point and optimisation of sputtering can be achieved by adjusting the diameter of the B-z = 0 ring. The results of this study should be helpful in the designing of an ideal UBM using permanent magnets as well as electromagnets. (C) 1999 Elsevier Science Ltd. All rights reserved.

Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS

A built-in-self-test (BIST) subsystem embedded in a 65-nm mobile broadcast video receiver is described. The subsystem is designed to perform analog and RF measurements at multiple internal nodes of the receiver. It uses a distributed network of CMOS sensors and a low bandwidth, 12-bit A/D converter to perform the measurements with a serial bus interface enabling a digital transfer of measured data to automatic test equipment (ATE). A perturbation/correlation based BIST method is described, which makes pass/fail determination on parts, resulting in significant test time and cost reduction.

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering

Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.

Suppressed rf dissipation in 107Ag17+ ion irradiated Bi2Sr2CaCu2O8 single crystals by enhanced flux line tilt modulus

We have studied the isothermal, magnetic field (H‖c) dependent rf power P(H) dissipation (Hrf‖a) in the superconducting state of Bi2Sr2CaCu2O8 single crystals prior to and after irradiation with 250 MeV 107Ag17+ ions. In the pristine state, P(H) shows an initial decrease with increase in field, reaches a minimum at HM(T) and increases monotonically for H>HM(T). This behavior arises when the electromagnetic coupling between the pancake vortices in adjacent CuO layers becomes dominant on increasing the field and minimizes the distortions of the flux lines by confining the 2D vortices. In the post irradiated state, such an initial decrease and the minimum in P(H) is not observed but only a much reduced rf dissipation that monotonically increases with field from H = 0 onwards is seen. We attribute this difference to the strong enhancement of the tilt modulus C44 of the flux lines on irradiation when the pancake vortices in adjacent CuO bilayers are pinned along the track forming a well-stacked flux line in the field direction (‖c). We have also observed that the rf dissipation disappears at a certain temperature Tsf, at which the normal core of the flux line becomes commensurate with the columnar track diameter.

Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Zn1−xMgxO (x = 0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1−xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn1−xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature.

Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

In the present work, we report the growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The growth parameters such as indium flux, substrate temperature and RF power affect the crystallographic and morphological properties of InN layers, which were evaluated using high resolution X-ray diffraction (HRXRD) analysis and atomic force microscopy (AFM). It is found that excess indium (In) concentrations and surface roughness were increased with increase in In flux and growth temperature. The intensity of HRXRD (0 0 0 2) peak, corresponding to c-axis orientation has been increased and full width at half maxima (FWHM) has decreased with increase in RF power. It was found that highly c-axis oriented InN epilayers can be grown at 450 degrees C growth temperature, 450 W RF power and 1.30 x 10(-7) mbar In beam equivalent pressure (BEP). The energy gap of InN layers grown by optimizing growth conditions was determined by photoluminescence and optical absorption measurement. (C) 2011 Elsevier B.V. All rights reserved.

Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs

The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has been studied using process and device simulation. It is shown that under fixed gate (Vgs) and drain (Vds) bias voltages, the NQS transition frequency (fNQS) scales as 1/Leff rather than 1/L2eff due to the velocity saturation effect. However, under the practical scaling guidelines, considering the scaling of supply voltage as well, fNQS shows a turn around effect at the sub 100 nm regime. The relation between unity gain frequency (ft) and fNQS is also evaluated and it is shown that ft and fNQS have similar trends with scaling.

Non-resonant rf absorption evidence for reentrant melting of vortex lattice in Bi2Sr2CaCu2O8 single crystals

We have studied the magnetic field dependent rf (20 MHz) losses in Bi2Sr2CaCu2O8 single crystals in the low field and high temperature regime. Above HCl the dissipation begins to decrease as the field is increased and exhibits a minimum at HM>HCl. For H>HM the loss increases monotonically. We attribute the decrease in loss above HCl to the stiffening of the vortex lines due to the attractive electromagnetic interaction between the 2D vortices (that comprise the vortex line at low fields) in adjacent CuO bilayers. The minimum at HM implies that the vortex lines are stiffest and hence represents a transition into vortex solid state from the narrow vortex liquid in the vicinity of HCl. The increase in loss for H>HM marks the melting of the vortex lattice and hence a second transition into vortex liquid regime. We discuss our results in the light of recent theory of reentrant melting of the vortex lattice by G. Blatter et al. (Phys. Rev. B 54, 72 (1996)).