Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs


Autoria(s): Srinivasan, R; Bhat, N
Data(s)

08/01/2003

Resumo

The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has been studied using process and device simulation. It is shown that under fixed gate (Vgs) and drain (Vds) bias voltages, the NQS transition frequency (fNQS) scales as 1/Leff rather than 1/L2eff due to the velocity saturation effect. However, under the practical scaling guidelines, considering the scaling of supply voltage as well, fNQS shows a turn around effect at the sub 100 nm regime. The relation between unity gain frequency (ft) and fNQS is also evaluated and it is shown that ft and fNQS have similar trends with scaling.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/43987/1/Effect_of_Scaling.pdf

Srinivasan, R and Bhat, N (2003) Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs. In: Proceedings of the 16th International Conference on VLSI Design (VLSI’03), 4-8 Jan. 2003, New Delhi, India.

Publicador

IEEE

Relação

http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=1183122&openedRefinements%3D*%26filter%3DAND%28NOT%284283010803%29%29%26searchField%3DSearch+All%26queryText%3DEffect+of+scaling+on+the+non-quasi-static+behaviour+of+the+MOSFET+for+RF+IC%27s

http://eprints.iisc.ernet.in/43987/

Palavras-Chave #Electrical Communication Engineering
Tipo

Conference Paper

PeerReviewed