Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/ s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of 1 V.

A time-domain method for the analysis of thermal impedance response preserving the convolution form

The study of the thermal behavior of complex packages as multichip modules (MCM¿s) is usually carried out by measuring the so-called thermal impedance response, that is: the transient temperature after a power step. From the analysis of this signal, the thermal frequency response can be estimated, and consequently, compact thermal models may be extracted. We present a method to obtain an estimate of the time constant distribution underlying the observed transient. The method is based on an iterative deconvolution that produces an approximation to the time constant spectrum while preserving a convenient convolution form. This method is applied to the obtained thermal response of a microstructure as analyzed by finite element method as well as to the measured thermal response of a transistor array integrated circuit (IC) in a SMD package.

Design and construction of precision heat fluxmeters

InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530¿°C exhibit alloy decomposition driving an anisotropic InGaAs surface roughness oriented along [1math0]. Conversely, lattice mismatched channels with an In molar fraction of 75% do not present this lateral decomposition but a strain induced roughness, with higher strength as the channel growth temperature increases beyond 490¿°C. In both cases the presence of the roughness implies low and anisotropic Hall mobilities of the two dimensional electron gas.

Modeling and manufacturability assessment of bistable quantum-dot cells

We have investigated the behavior of bistable cells made up of four quantum dots and occupied by two electrons, in the presence of realistic confinement potentials produced by depletion gates on top of a GaAs/AlGaAs heterostructure. Such a cell represents the basic building block for logic architectures based on the concept of quantum cellular automata (QCA) and of ground state computation, which have been proposed as an alternative to traditional transistor-based logic circuits. We have focused on the robustness of the operation of such cells with respect to asymmetries derived from fabrication tolerances. We have developed a two-dimensional model for the calculation of the electron density in a driven cell in response to the polarization state of a driver cell. Our method is based on the one-shot configuration-interaction technique, adapted from molecular chemistry. From the results of our simulations, we conclude that an implementation of QCA logic based on simple ¿hole arrays¿ is not feasible, because of the extreme sensitivity to fabrication tolerances. As an alternative, we propose cells defined by multiple gates, where geometrical asymmetries can be compensated for by adjusting the bias voltages. Even though not immediately applicable to the implementation of logic gates and not suitable for large scale integration, the proposed cell layout should allow an experimental demonstration of a chain of QCA cells.

Electronic properties of a quantum wire with arbitrary bending angle

The electron transmission and bound state properties of a quantum wire with a sharp bend at arbitrary angle are studied, extending results on the right angle sharp bend (the L¿shaped wire). These new results are compared to those of a similar structure, the circular bend wire. The possibility of using a bent wire to perform transistor action is also discussed.

Theory of surface noise under Coulomb correlations between carriers and surface states

We present a theory of the surface noise in a nonhomogeneous conductive channel adjacent to an insulating layer. The theory is based on the Langevin approach which accounts for the microscopic sources of fluctuations originated from trapping¿detrapping processes at the interface and intrachannel electron scattering. The general formulas for the fluctuations of the electron concentration, electric field as well as the current-noise spectral density have been derived. We show that due to the self-consistent electrostatic interaction, the current noise originating from different regions of the conductive channel appears to be spatially correlated on the length scale correspondent to the Debye screening length in the channel. The expression for the Hooge parameter for 1/f noise, modified by the presence of Coulomb interactions, has been derived

Registrador portátil de odorantes basado en la modulación de temperatura de un sensor mos comercial

A simple, portable and low-cost system for odor detection was developed using a single MOS commercial sensor and a microcontroller. The temperature modulation technique was implemented applying a DC signal pulse to the sensor heater by a bipolar transistor. Two odorant profiles, ethanol and acetic acid vapors, were obtained and distinguished based on their amplitude versus time responses. Response for acetic acid was not reported by the sensor manufacturer. An ethanol vapor calibration curve was also obtained. Experimental data showed a potential behavior according to the theoretical equation of the MOS sensors. Values of logK=0.457 and α=-0.213 for a 95% confidence level were obtained.

IGB-transistorien rinnankytkentä

Tässä kandidaatintyössä tutkitaan IGB-transistorien rinnankytkentää ja siinä usein esiintyvää virran epäsymmetristä jakaantumista. Työssä esitellään yleisempien IGB-transistorien rakenteet ja tarkastellaan niiden tärkeimpiä ominaisuuksia. IGBT:n parametrien sekä ulkoisen piirin vaikutusta virran jakaantumiseen selvitetään. Vaikuttavien tekijöiden pohjalta pyritään esittämään tarvittavat toimenpiteet sekä mittaustavat, joilla virran jakaantumista voidaan tasoittaa ja saada toteutettua luotettava IGB-transistorien rinnankytkentä.

IGBT-simulaatiomallien soveltuvuus laitetason hyötysuhdesimulaatioihin

Tehoelektroniikkalaitteiden tehon kasvun myötä niiden hyötysuhteesta on tullut yksi niiden tärkeimmistä ominaisuuksista. Suurilla tehoilla prosentuaalisesti pienetkin tehohäviöt ovat merkittäviä ja aiheuttavat laitteen käyttäjälle ylimääräisiä energiakustannuksia ja tarvetta hukkalämmön poistolle. Näistä syistä asiakkaat vaativat hyvällä hyötysuhteella toimivia laitteita, joten laitevalmistajat pyrkivät tekemään niistä sellaisia. Simulaatiomallit ovat arvokkaita työkaluja laitesuunnittelussa. Hyötysuhdeoptimoinnin kannalta tehohäviöt tulisi pystyä mallintamaan, jotta komponenttivalintojen, ohjaustapojen ja pääpiiritopologioiden vaikutusta hyötysuhteeseen voitaisiin arvioida. Tässä työssä perehdytään eristehilabipolaaritransistorista (IGBT) tehtyihin simulaatiomalleihin ja arvioidaan niiden soveltuvuutta IGBT:ssä syntyvien tehohäviöiden mallintamiseen. Lisäksi verrataan mallia mittaukseen ja pohditaan, millaiset vaatimukset simulaatiomalliin todellisuudessa kohdistuvat.

Switching components for medium voltage drives

Nowadays power drives are the essential part almost of all technological processes. Improvement of efficiency and reduction of losses require development of semiconductor switches. It has a particular meaning for the constantly growing market of renewable sources, especially for wind turbines, which demand more powerful semiconductor devices for control with growth of power. Also at present semiconductor switches are the key component in energy transmission, optimization of generation and network connection. The aim of this thesis is to make a survey of contemporary semiconductor components, showing difference in structures, advantages, disadvantages and most suitable applications. There is topical information about voltage, frequency and current limits of different switches. Study tries to compare dimensions and price of different components. Main manufacturers of semiconductor components are presented with the review of devices produced by them, and a conclusion about their availability was made. IGBT is selected as a main component in this study, because nowadays it is the most attractive component for usage in power drives, especially at the low levels of medium voltage. History of development of IGBT structure, static and dynamic characteristics are considered. Thesis tells about assemblies and connection of components and problems which can appear. One of key questions about semiconductor materials and their future development was considered. For the purpose of comparison strong and weak sides of different switches, calculation of losses of IGBT and its basic competitor – IGCT is presented. This master’s thesis makes an effort to answer the question if there are at present possibilities of accurate selection of switches for electrical drives of different rates of power and looks at future possible ways of development of semiconductor market.

Modeling and Analysis of Noise and Interconnects for On-Chip Communication Link Design

This thesis considers modeling and analysis of noise and interconnects in onchip communication. Besides transistor count and speed, the capabilities of a modern design are often limited by on-chip communication links. These links typically consist of multiple interconnects that run parallel to each other for long distances between functional or memory blocks. Due to the scaling of technology, the interconnects have considerable electrical parasitics that affect their performance, power dissipation and signal integrity. Furthermore, because of electromagnetic coupling, the interconnects in the link need to be considered as an interacting group instead of as isolated signal paths. There is a need for accurate and computationally effective models in the early stages of the chip design process to assess or optimize issues affecting these interconnects. For this purpose, a set of analytical models is developed for on-chip data links in this thesis. First, a model is proposed for modeling crosstalk and intersymbol interference. The model takes into account the effects of inductance, initial states and bit sequences. Intersymbol interference is shown to affect crosstalk voltage and propagation delay depending on bus throughput and the amount of inductance. Next, a model is proposed for the switching current of a coupled bus. The model is combined with an existing model to evaluate power supply noise. The model is then applied to reduce both functional crosstalk and power supply noise caused by a bus as a trade-off with time. The proposed reduction method is shown to be effective in reducing long-range crosstalk noise. The effects of process variation on encoded signaling are then modeled. In encoded signaling, the input signals to a bus are encoded using additional signaling circuitry. The proposed model includes variation in both the signaling circuitry and in the wires to calculate the total delay variation of a bus. The model is applied to study level-encoded dual-rail and 1-of-4 signaling. In addition to regular voltage-mode and encoded voltage-mode signaling, current-mode signaling is a promising technique for global communication. A model for energy dissipation in RLC current-mode signaling is proposed in the thesis. The energy is derived separately for the driver, wire and receiver termination.

Printed low-voltage organic transistors on plastics and paper

The main advantage of organic electronics over the more widespread inorganic counterparts lies not in the electrical performance, but rather in the solution processability that opens up for low-cost flexible electronics (e.g. displays, sensors and smart tags) fabricated by using printing techniques. Replacing the commonly used laboratory-scale fabrication techniques with mass-printing techniques is, however, truly challenging, especially when low-voltage operation is required. In this thesis it is, nevertheless, demonstrated that low-voltage organic transistors can be fully printed with a similar performance to that of transistors made by laboratory scale techniques. The use of an ion-modulated type of organic field effect transistor (OFET) not only enabled low-voltage operation and printability, but was also found to result in low sensitivity to the surface roughness of the substrate. This allows not only the use of low-cost plastic substrates, but even the use of paper as a substrate. However, while absorption into the porous paper surface is advantageous in a graphical printing process, by reducing the spreading and the coffee-stain effect and by improving the adhesion, it provides great challenges when applying thin electrically active layers. In spite of these difficulties we were able to demonstrate the first low-voltage OFET to be fabricated on paper. We have also shown that low-cost incandescent lamps can be used for sintering printed metal-nanoparticles, and that the process was especially suitable on paper and compatible with a roll-to-roll manufacturing process.

Field-Programmable Gate Array Card for Readout and Control of Cryoelectronics

The main goal of the present Master’s Thesis project was to create a field-programmable gate array (FPGA) based system for the control of single-electron transistors or other cryoelectronic devices. The FPGA and similar technologies are studied in the present work. The fixed and programmable logic are compared with each other. The main features and limitations of the hardware used in the project are investigated. The hardware and software connections of the device to the computer are shown in detail. The software development techniques for FPGA-based design are described. The steps of design for programmable logic are considered. Furthermore, the results of filters implemented in the software are illustrated.

Tasasähköverkon modulaarisen vaihtosuuntaajan rakenne- ja kustannusanalyysi

Diplomityössä tarkastellaan tapausta, jossa tasasähköverkon vaihtosuuntaaja toteutetaan kolmella yksivaiheisella suuntaajalla yhden kolmivaiheisen sijaan. Modulaarinen rakenne mahdollistaa sen, että osa vaiheista voitaisiin sammuttaa kun kuormitus on erittäin pientä eikä kuorma ole kolmivaiheista. Galvaaninen erotus oletetaan tehtävän erottavalla DC-DC -konvertterilla, joka mahdollistaa samalla vaihtosuuntaajan DC-syöttöjännitteen muuttamisen. Työssä tutkitaan, mitkä tekijät vaikuttavat DC-syöttöjännitteen valintaan sekä tehdään valinta kyseisen jännitteen arvolle. Valittua jännitetasoa käytetään vaihtosuuntaajan suunnittelemiseen. Vaihtosuuntaajan rakennetta tarkastellaan vaihtosuuntaussillan kytkinkomponenttien sekä lähtöjännitteen suotimen osalta. Yksivaiheiselle moduulille määritetään optimaalinen teholuokka investointi- ja käyttökustannusten kannalta. Tarkastelu pitää sisällään erilaisten transistoritekniikkojen, kytkentätaajuuksien sekä kahden suodintyypin vaikutuksen kustannustehokkuuteen.