40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron¿oxide interface layers
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
02/03/2012
|
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
Magnetic properties (c) American Institute of Physics, 2001 |
| Palavras-Chave | #Propietats magnètiques #Circuits de transistors #Electrònica de l'estat sòlid #Transistor circuits #Solid state electronics |
| Tipo |
info:eu-repo/semantics/article |
