898 resultados para high-bandwidth LCL filter


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An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.

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An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

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Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

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The design of a low loss quasi-optical beam splitter which is required to provide efficient diplexing of the bands 316.5-325.5 GHz and 349.5-358.5 GHz is presented. To minimise the filter insertion loss, the chosen architecture is a three-layer freestanding array of dipole slot elements. Floquet modal analysis and finite element method computer models are used to establish the geometry of the periodic structure and to predict its spectral response. Two different micromachining approaches have been employed to fabricate close packed arrays of 460 mm long elements in the screens that form the basic building block of the 30mm diameter multilayer frequency selective surface. Comparisons between simulated and measured transmission coefficients for the individual dichroic surfaces are used to determine the accuracy of the computer models and to confirm the suitability of the fabrication methods.

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A high-sample rate 3D median filtering processor architecture is proposed, based on a novel 3D median filtering algorithm, that can reduce the computing complexity in comparison with the traditional bubble sorting algorithm. A 3 x 3 x 3 filter processor is implemented in VHDL, and the simulation verifies that the processor can process a 128 x 128 x 96 MRI image in 0.03 seconds while running at 50 MHz.

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A simple method for the selection of the appropriate choice of surface-mounted loading resistor required for a thin radar absorber based on a high-impedance surface (HIS) principle is demonstrated. The absorber consists of a HIS, (artificial magnetic ground plane), thickness 0.03 lambda(0) surface-loaded resistive-elements interconnecting a textured surface of square patches. The properties of absorber are characterized under normal incident using a parallel plate waveguide measurement technique over the operating frequency range of 2.6-3.95 GHz. We show that for this arrangement return loss and bandwidth are insensitive to +/- 2% tolerance variations in surface resistor values about the value predicted using the method elaborated in this letter, and that better than -28 dB at 3.125 GHz reflection loss can be obtained with an effective working bandwidth of up to 11% at -10 dB reflection loss. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1733-1775, 2009; Published online in Wiley Interscience (www.interscience.wiley.com). DOI 10.1002/mop.24454

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The design of a high-performance IIR (infinite impulse response) digital filter is described. The chip architecture operates on 11-b parallel, two's complement input data with a 12-b parallel two's complement coefficient to produce a 14-b two's complement output. The chip is implemented in 1.5-µm, double-layer-metal CMOS technology, consumes 0.5 W, and can operate up to 15 Msample/s. The main component of the system is a fine-grained systolic array that internally is based on a signed binary number representation (SBNR). Issues addressed include testing, clock distribution, and circuitry for conversion between two's complement and SBNR.

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We report the static & dynamic magnetic characteristics of a high-layer-number NiFe/FeMn multilayer test structure with potential applications in broadband absorber and filter devices. To allow fine control over the absorption linewidths and to understand the mechanisms governing the resonances in a tailored structure similar to that expected to be used in real world applications, the multilayer was intentionally designed to have layer thickness and interface roughness variations. Magnetometry measurements show the sample has complex hysteresis loops with features consistent with single ferromagnetic film reversals. Structural characterisation by transmission electron microscopy allows us to correlate the magnetic properties with structural features. Analysis of resonance frequencies from broadband ferromagnetic resonance measurements as a function of field magnitude and orientation provide values of the local exchange bias, rotatable anisotropy, and uniaxial anisotropy fields for specific layers in the stack and explain the observed mode softening. The linewidths of the multilayer are adjustable around the bias field, approaching twice that seen at larger fields, allowing control over the bandwidth of devices formed from the structure.

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A novel, compact and highly selective microstrip bandpass filter with bandwidth reconfigurability for ultra-wideband (UWB) applications is presented. The proposed design uses stepped impedance resonator (SIR) for realization of bandpass filter (BPF) and employs a single varactor diode (BB135-NXP) for the purpose of reconfiguring bandwidth. Additionally, to improve the selectivity between passband edges, a cross-coupling between I/O feed lines is introduced which generated pairs of attenuation poles at each side of the passband. Measurements on a fabricated reconfigurable filter confirm the accuracy of the design procedure. Measured responses show good agreement with simulation. The proposed filter is able to achieve significant size reduction (8.5 mm × 7.1 mm excluding the feeding ports) as compared to the conventional bandpass filters with reconfigurable bandwidth.

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A novel technique fitr the bat dividth enhancement of conventional rectangular microstrip antenna is proposed in this paper. When a high permittivity dielectric resonator of suitable resonant frequency was loaded over the patch. the % bandwidth of the antenna was increased by more than five tunes without much affecting its gain and radiation performance. A much more improved bandwidth was obtained when the dielectric resonator was placed on the feedline. Experimental study shows a 2:1 VSWR bandwidth of more than 10% and excellent cross polarization performance with increased pass band and radiation coverage abnost the same as that of rectangular microstrip antenna

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The use of a split-ring resonator (SRR)-loaded waveguide for the design of a band-rejection filter with adjustable bandwidth is reported. The width of the stopband can be adjusted by suitably positioning the SRR array in the waveguide. The rejection band can be made very narrow by placing the array at the electric-field minimum. The stopband attenuation depends on the number of unit cells in the array.

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The paper presents a compact planar Ultra Wide Band ¯lter employing folded stepped impedance resonators with series capacitors and dumb bell shaped defected ground structures. An interdigital quarter wavelength coupled line is used for achieving the band pass characteristics. The transmission zeros are produced by stepped impedance resonators. The ¯lter has steep roll o® rate and good attenuation in its lower and upper stop bands, contributed by the series capacitor and defected ground structures respectively.

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Nonpolarizing edge filters have recently becmoe important to separate those IR gas bands used in atmospheric sensing into their P and R branches, namely, the v2 of C02 at a 15µm wavelength. Whereas Thelen has developed all necessary principles for the entire class of nonpolarizing filters it remains difficult to subsittute ither refractive indices (such as infrared) into a visible-region design or assess the effect on consequent performance.