Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution

We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray spectroscopy analyses suggest that Zn ions are distributed nonhomogenously in InN nanorods. Simulations based on diffusion model show that the doping concentration along the radial direction of InN nanorod is bowl-like from the exterior to the interior, the doping concentration decreases, and Such dopant distribution result in a bimodal EDXS spectrum of Zn across the nanorod. The study of the mechanism of doping effect is useful for the design of InN-based nanometer devices. Also, high-quality Zn-doped InN nanorods will be very attractive as building blocks for nano-optoelectronic devices.'

Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N-O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

C-axis-orientated ZnO thin films were prepared on glass substrates by pulsed-laser deposition (PLD) technique in an oxygen-reactive atmosphere, using a metallic Zn target. The effects of growth condition such as laser energy and substrate temperature on the structural and optical properties of ZnO films had been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra and room-temperature (RT) photoluminescence (PL) measurements. The results showed that the thickness, crystallite size, and compactness of ZnO films increased with the laser energy and substrate temperature. Both the absorption edges and the UV emission peaks of the films exhibited redshift, and UV emission intensity gradually increased as the laser energy and substrate temperature increased. From these results, it was concluded that crystalline quality of ZnO films was improved with increasing laser energy and substrate temperature. (c) 2007 Elsevier B.N. All rights reserved.

ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target

ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 degrees C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19 degrees with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 degrees C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.

InN 掺Zn 纳米棒的生长及相关物性研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:02:23Z No. of bitstreams: 1 博士论文_宋华平.pdf: 7565520 bytes, checksum: 9a84fac0d1cfa3a88a07a220d083d164 (MD5)

新型绿色荧光体ABLa(PO_4)_2:Ce, Tb研究(A = K, Na; B = Mg, Zn)

本工作完成了磷酸盐化合物ABLa(PO_4)_2的合成，这些磷盐均可在900 ℃左右合成；对其进行了结构测试与表征，发现这些磷酸盐属于单斜晶系独居石结构，与LaPO_4同构，具有很相近的晶胞参数；系统地研究了RE~(3+)离子(RE = Ce,Tb,Dy)在ABLa(PO_4)_2基质中的发光与能量传递规律，研究了Ce~(3+)、Tb~(3+)离子发光中心与基质晶格之间的相互作用，计算了这些稀土离子之间能量传递的临界距离Rc(dd)，结果表明ABLa(PO_4)_2基质中Ce~(3+)离子与基质晶格之间的相互作用属于中等程度耦合，Tb~(3+)离子与基质晶格之间的相互作用属于无辐射多声子过程，Ce~(3+)→Ce~(3+)、Ce~(3+)→Tb~(3+)能量迁移临界距离均与LaPO_4中相近，Ce~(3+) → Ce~(3+)相对于Ce~(3+) → Tb~(3+)属于快过程，Ce~(3+) → Ce~(3+)能量传递对ABLa(PO_4)_2:Ce,Tb荧光体的Tb~(3+)绿色发光起了重要的作用，ABLa(PO_4)_2基质是Ce~(3+)，Ce~(3+)-Tb~(3+)，Ce~(3+)-Dy~(3+)的优良发光基质；最后探讨了绿色荧光体ABLa(PO_4)_2:Ce，Tb的调制途径，主要研究了Ce~(3+)、Tb~(3+)离子的浓度效应，掺杂B_2O_3、Dy~(3+)、SiO_2对荧光体发光的影响及NH_4Cl的作用，结果表明Ce~(3+)、Tb~(3+)离子的适宜浓度分别为0.2～0.5和0.08～0.2，掺杂适量的B_2O_3、Dy~(3+)能很好地提高荧光体的发光，掺杂SiO_2、NH_4Cl不利荧光体发光。

钠原子激光增强电离光谱研究—以石墨杯为原子化器 原子吸收光谱法对发样中Zn、Cu、Mn、Ap的测定

、I钠原子激光增强电离光谱(LEIS)方法的研究-以石墨杯为原子化器在LEIS方法中，最常见的原子化器是火焰。但由于火焰背景噪声严重且难以克服，在火焰原子化过程中，雾化和热离解不充分，仅有10~(-2)%的分析溶液参与吸收以及火焰气体使测定元素受到高度稀释等不利因素的影响，火焰原子化限制了LEIS方法灵敏度的进一步提高。考虑到石墨炉原子化器较火焰具有取样量少，绝对灵敏度高；样品（包括固态、液态）可直接引入石墨炉内；不会发生如同火焰中所存在的干扰效应；蒸发效率和原子化效率较高，几乎全部样品都能参与吸收等优点，本工作在已建立火焰LEIS方法的实验基础上，将原子化器改换为石墨杯进行了钠原子LEIS方法的研究。到目前为止，国内外仅有的几篇有关石黑炉LEIS的研究报告中，都报导了该方法对钠原子的检出限估计可达到10~(-14)-10~(-15)克，由于此项研究尚处于探索性研究阶段，故有关方法性的系统研究几乎还未见报导。本工作在未使用任何放大器的情况下（实验条件限制）对影响钠原子LEIS信号强度的诸因互进行了实验观察。主要包括：钠原子化条件；激光束位置、阳极电压、激光输出能量、电极位置以及激光脉冲重复率对LEIS信号强度的影响等。并绘制了校准曲线，统计方法的相对标准偏差分别为11%（高浓度）18.2%（低浓度），在现有仪器条件下，还不能测出检出限，测定下限为3*10~(-9)克。对固体粉末直接进行了尝试，检测下限为5*10~(-8)克，进样是为5毫克。在进一步的研究工作中，如有条件使用低噪声的放大器及Bxear积分器，选择门检时间窗，或采用分步激发等手段，估计本方法定会达到预想的高灵敏度，检敏度至少提高了个数量级。对石墨炉原子化LEIS法来说，似比较详细的研究报告，截至实验停止时还未见报导。II原子吸收光谱法对发样中Zn、Cu、Mn、Al的测定发中微量元素ZN、Cu、Mn均属人体必需元素，与人体的生长发育和多种生理功能，临床医学等方面有着极为密切的关系，而Al则被认为是异致某种疾病的元素之一。本工作报告了用火焰法测定Zn、Cu；石墨炉法测定Al、Mn的结果，其中，对Al的测定，为摆脱基体干扰，加入改进剂Mg(NO_3)_2，并采用平台石墨炉进行试验，得到了线性较好的工作曲线，但在实际测定时，由于实验条件的限制，只能采用一般石墨管加基体改进剂对少娄样品中Al含量进行测定。Zn、Cu、Al三种元素由标准曲线法测定；而Mn由于Fe的干扰无法消除而采用标准加入法测定，并因此限制了测定样品数。Cu、ZN、Mn三种元素的回收率分别为102.8%, 99.7%, 102.5%，变异系数为9.6%, 11.3%, 9.7%，对本地居民发中（30个发样）Zn、Cu含量进行测定，Zn、Cu的含量范围为148-318ppm，7.2-15ppm，并计算了Zn/Cu比。本方法对发样中四种元素的测定结果与ICP法进行对照。两种方法测定结果吻合得较好。

伯胺N_(1923)与其它试剂对金属离子(Zn~(2+).Cd~(2+).RE~(3+))的萃取及协同萃取

胺类萃取剂具有其独特优点，特别是伯胺，因含有活泼氢，既能作为“阴离子交换剂”，又能与被萃的含氧金属络阴离了形成氢键而溶剂化，同时伯胺为一路易斯碱，可作为配体与某些金属离子形成配位键等，因而已广泛地用于金属离子的提纯与分离工业中。然而，1）为了寻找新的、更有效的萃取及协同萃取体系，以适应分析分离各种金属离子，改善金属离子的分离工艺；2）研究萃取和协同萃取的一般规律，探寻其内在规律性，充实完善萃取化学原理的内容；3）研究多元配合物的组成、结构和机理；4）系统地研究和比较不同结构胺类萃取剂与其它萃取剂对金属离子的萃取及协同萃取的相互作用，探讨多元配合物的形成条件等，因此，研究伯胺N_(1923)与其它萃取剂在不同酸度、不同条件，不同体系中对Zn(II)、Cd(II)、Re(III)的萃取及协同萃取具有一定意义。本文分别研究了伯胺N_(1923)与中性磷试剂对ZnCl_2、CdCl_2、Zn(SCN)_2的协同萃取；伯胺N_(1923)与HPMBP对RE（III）的协同萃取以及伯胺N_(1923)在不同介质中对Sc(III)的萃取机理等，并用得到了一些有意义的结果与结论。一、伯胺N_(1923)与中性磷萃取剂(TBP, DBBP)对Zn(II)、Cd(II)的协同萃取1. 伯胺N_(1923)与TBP、DBBP对ZnCl_2的协萃取 研究了伯胺N_(1923)与TBP、DBBP的正庚烷溶液从盐酸介质中对ZnCl_2的萃取机理，用斜率法、等摩尔系列法确定了协萃配合物组成为：(RNH_3Cl)_3·ZnCl_2·B、(RNH_3Cl)_2·ZnCl_2·B (B = TBP·DBBP)协萃反应为：ZnCl_2 + (RNH_3Cl)_3_((o)) + TBP_((o)) →~(K_(12)(TBP) (RNH_3Cl)_3·ZnCl_3·ZnCl_2·TBP_((o)) ZnCl_2+Z/3(RNH_3Cl)_(3(o)) + DBBP_((o)) → (RNH_3Cl)_2 · ZnCl_2·DBBP_((o))协萃配合物生成反应为：(RNH_3Cl)_3·ZnCl_(2(o)) + TBP_((o))→~(B_(12)(TBP) (RNH_3Cl)_3·ZnCl_2·TBP_((o)) (RNH_3Cl)_3·ZnCl_(2(o)) + DBBP_((o)) →~(B_(12)(DBBP) (RNH_3Cl)_2·ZnCl_2·DBBP_((o)) + RNH_3Cl_((o))同时发现，中性磷试剂对Zn(II)的协萃效应大小影响有下列关系：DBBP>TBP。并求得了协萃反应平衡常数和协萃配合物生成反应平衡常数。在研究溶剂对协同效应影响时发现，对芳香烃及其衍生物，分配比（D）与溶剂介电常数（ε）的关系为D_∝1/ε，而对芳香烃及其衍生物，分配比（D）与介电常数（ε）的关系为D_∝ε。讨论了温度对协萃反应的影响，对协萃配合物的IR、NMR谱也进行了研究。2.伯胺N_(1923)与TBP对Zn_(SCN)_2的协同萃取研究了伯胺N_(1923)与TBP的庚烷溶液从硝酸底液中对Zn(SCN)_2的萃取机理，用等摩尔系列法、斜率法确定了TBP和Zn(SCN)_2以及伯胺N_(1923)与TBP对Zn(SCN)_2的协萃配合物组成分别为：Zn(SCN)_2·3TBP. (RNH_3)_2Zn(SCN)_4·TBP,协谇反应为：Zn(SCN)_4~(2-) + (RNH_3NO_3)_(2(o)) + TBP_((o)) → (RNH_3)_2Zn(SCN)_4·TBP_((o)) + 2NO_3~-协萃配合物三种可能生成反应为(RNH_3)_2Zn(SCN)_(4(o)) + TBP_((o)) → ~(B'12) (RNH_3)_2Zn(SCN)_4·TBP_((o)) (a) (RNH_3NO_3)_(2(o)) + Zn(SCN)_2·3TBP_((o)) + 2SCN~-→~(β"12)→(RNH_3)Zn(SCN)_4βTBP_((o))+2TBP_((o))+2NO_3~- (b) (RNH_3NO_3)_(2(o)) + (RNH_3)_2Zn(SCN)_(4(o)) + 2SCN~- + Zn(SCN)_2.3TBP_((o)) →~(β"12)→R(RNH_3)_2Zn(SCN)_4.TBP_((o)) + 2NO_3~- + TBP_((o)) (c) 求得了协萃反应及生成反应的平衡常数，并由生成反应常数可知：β"'_(12) > β'_(12) > β"_(12)，即反应（c）对协萃配合物的生成贡献最大，其次反应（a），最小的是反应（b），同时还发现，不同阴离子对协萃效应影响有下列关系：SCN~- > Cl~_。并对协萃配合物的IR谱进行了研究，讨论了温度对协萃反应的影响。3. 伯胺N_(1923)与TBP、DBBP对Cd（II）的协同萃取研究了伯胺N_(1923)与TBP、DBBP的正庚烷溶液从盐酸介质中对Cd(II)的协同萃取，用等摩尔系列法、斜率法确定了协萃配合物组成为(RNH_3Cl)_2·CdCl_2·B，协萃反应及协萃配合物生成的反应分别为：CdCl_2 + 2/3 (RNH_3Cl)_(3(o)) + B_((o)) →~(K_(12)) → (RNH_3Cl)_2·CdCl_2·B_((o)) (RNH_3Cl_3)·CdCl_2_((o)) + B_((o)) →~(BR)(RNH_3Cl)_2·CdCl_2·B_((o)) + RNH_3Cl_((o))求得了协萃反应及生成反应平衡常数，计算了协萃反应的热力学函数值，结果还发现与Zn(II)协同萃取比较，协同效应大小有下列关系：Zn(II) > Cd(II)，由实验结果证实了“萃取效应大，则协萃效应小，反之，萃取效应小，则协同效应大”这一结论。并对协萃配合物的IR、NMR谱进行了研究。二. 伯胺N_(1923)与HPMBP对RE（III）的协同萃取研究了伯胺N_(1923)与HPMBP的二甲苯溶液在盐酸介质中对RE（III）的协萃机理（RE~(3+ = La~(3+), Pr~(3+), Eu~(3+), Gd~(3+), Tb~(3+), Er~(3+), Yb~(3+)和Y~(3+)）用斜率法及等摩尔系列法确定了协萃配合物组成为RNH_3Ln(PMBP)_4。求得了关于Pr(III)的协萃反应及生成反应的平衡常数值，协萃反应及生成反应分别为：Ln~(3+) + 4HPMBP_((o)) + RNH_3Cl_((o)) → RNH_3LN(PMBP)_(4(o)) + 4H~+ + Cl~- Ln(PMBP)_(3(o)) + RNH_3Cl_((o)) → RNH_3Ln(PMBP)_(4(o)) + H~+ + Cl~- 结果还发现协萃系数（R）随稀土元素的原子序数（Z）递变而出现“双峰效应”（未见文献报道），而且随RNH_3Cl浓度增加到某一一出现反协同效应。同时研究了关于Pr(III)协萃配合物的IR、NMR谱。三、伯胺N_(1923)在硝酸盐及硫氰酸盐混合介质中对Sc(III)的萃取研究了RNH_3NO_3在硝酸盐和硫氰酸盐混合介质中萃取Sc(III)的机理，结果发现，钪是以Sc(OH)_2~+形式萃入有机相的，且SCN~-, NO_3~-对RNH_3nO_3萃取Sc(III)具有协同效应，并且斜率法、连续变化法及PH值测定确定了萃取反应为：Sc(OH)_2~+ + SCN~- + 2(RNH_3NO_3)_(2((o)) → (RNH_3nO_3)_4.Sc(OH)_2SCN_((o)) Sc(OH)_2~+ + SCN~- + NO_3~- + (RNH_3NO_3)_(2(o)) → (RNH_3NO_3)_2.Sc(OH)(SCN)NO_3 + OH~-求得了反应的平衡常数及热力学函数值。