Magneto-transport study of Nb-doped Bi/Pb2223 superconductor

The magneto-transport properties of Bi1.5Pb0.4Nb0.1Sr2Ca2Cu 3O10-x polycrystalline, superconducting ceramic are reported. The material was found to be chemically homogeneous and partially textured. The mixed state properties were investigated by measuring the electrical resistivity, longitudinal and transverse (Nernst effect) thermoelectric power, and thermal conductivity. The magnetization and AC susceptibility measurements were also performed. The variation of these characteristics for magnetic fields up to 5 T are discussed and compared to those of the zero field case. The transport entropy and thermal Hall angle are extracted and quantitatively compared to previously reported data of closely related systems. © 2003 Elsevier Science B.V. All rights reserved.

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.

Interference in transport through double barriers in interacting quantum wires

We investigate interference effects of the backscattering current through a double-barrier structure in an interacting quantum wire attached to noninteracting leads. Depending on the interaction strength and the location of the barriers, the backscattering current exhibits different oscillation and scaling characteristics with the applied voltage in the strong and weak interaction cases. However, in both cases, the oscillation behaviors of the backscattering current are mainly determined by the quantum mechanical interference due to the existence of the double barriers.

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

ZnO nanocrystals were synthesized by hydrolysis in methanol. X-ray diffraction and photoluminescence spectra confirm that good crystallized ZnO nanoparticles were formed. Utilizing those ZnO nanoparticles and poly [2- methoxy-5 - (3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV), light emitting devices with indium tin oxide (ITO)/poly(3,4-oxyethyleneoxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS)/ ZnO:MDMO-PPV/Al and ITO/PEDOT:PSS/MDMO-PPV/Al structures were fabricated. Electrolummescence (EL) spectra reveal that EL yield of hybrid MDMO-PPV and ZnO nanocrystals devices increased greatly as compared with pristine MDMO-PPV devices. The current-voltage characteristics indicate that addition of ZnO nanocrystals can facilitate electrical injection and charge transport. The decreased energy barrier to electron injection is responsible for the increased efficiency of electron injection. (c) 2007 Elsevier B.V. All rights reserved.

Quantum measurement characteristics of a double-dot single electron transistor

Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

Study on the reverse characteristics of Ti/6H-SiC Schottky contacts

The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

The current-voltage (I-V) characteristics of a doped weakly coupled GaAs/AlAs superlattice (SL) with narrow barriers are measured under hydrostatic pressure from 1 bar to 13.5 kbar at both 77 and 300 K. The experimental results show that, contrary to the results in SL with wide barriers, the plateau in the I-V curve at 77 K does not shrink with increasing pressure, and becomes wider after 10.5 kbar. It is explained by the fact that the E-Gamma 1-E-Gamma 1 resonance peak is higher than the E-Gamma 1-E-X1 resonance peak. At 300 K, however, because of the more important contribution of the nonresonant component to the current, the plateau shrinks with increasing pressure. (C) 1999 American Institute of Physics. [S0021-8979(99)02008-3].

CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS

The influence of heterostructure quality on transport and optical properties of GaAs/AlGaAs single quantum wells with different qualities was studied. In a conventional sample-A, the transport scattering time and the quantum scattering time are small and close to each other. The interface roughness scattering is a dominant scattering mechanism. From comparison between theory and experiment, interface roughness with fluctuation height 2.5 Angstrom and the lateral size of 50-70 Angstrom were estimated. For samples introducing superlattices instead of AlGaAs layers or by utilizing growth interruption, both the transport and PL measurements showed that interfaces were rather smooth in the samples. The two scattering times are much longer. The interface roughness scattering is relegated to an unimportant position. Results demonstrated that it is important to control the formation of heterostructures in order to improve the interface quality.

ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS

We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

Effects of soil type on leaching and runoff transport of rare earth elements and phosphorous in laboratory experiments

Through leaching experiments and simulated rainfall experiments, characteristics of vertical leaching of exogenous rare earth elements (REEs) and phosphorus (P) and their losses with surface runoff during simulated rainfall in different types of soils (terra nera soil, cinnamon soil, red soil, loess soil, and purple soil) were investigated. Results of the leaching experiments showed that vertical transports of REEs and P were relatively low, with transport depths less than 6 cm. The vertical leaching rates of REEs and P in the different soils followed the order of purple soil > terra nera soil > red soil > cinnamon soil > loess soil. Results of the simulated rainfall experiments (83 mm h(-1)) revealed that more than 92% of REEs and P transported with soil particles in runoff. The loss rates of REEs and P in surface runoff in the different soil types were in the order of loess soil > terra nera soil > cinnamon soil > red soil > purple soil. The total amounts of losses of REEs and P in runoff were significantly correlated.

The characteristics of land cover and macroscopical ecology changes in the source region of three rivers in Qinghai-Tibet plateau during last 30 years

We obtained four phases of land cover spatial data sets by interpreting MSS images of middle and late 1970s and three phases of TM images of late 1980s, 2004 and 2008 based on field investigation in Three Rivers' Source Region. We analyzed the temporal and spatial characteristics of land cover and macro ecological changes in Three Rivers' Source Region in Qinghai-Tibet plateau since middle and late 1970s. Indicated by land cover condition index change rate and land cover change index, land cover and macroscopical ecological condition degenerated (7090 period Zc -0.63, LCCI -0.58)-obviously degenerated (9004 period, Zc -0.94, LCCI -1.76)-slightly meliorated (0408 period, Zc 0.06, LCCI 0.33). This course was jointly driven by climate change, grassland stocking pressure and implement of ecological construction project.

From Tunneling to Hopping: A Comprehensive Investigation of Charge Transport Mechanism in Molecular Junctions Based on Oligo(p-phenylene ethynylene)s

The charge transport mechanism of oligo(p-phenylene ethynylene)s with lengths ranging from 0.98 to 5.11 nm was investigated using modified scanning tunneling microscopy break junction and conducting probe atomic force microscopy methods. The methods were based on observing the length dependence of molecular resistance at single molecule level and the current-voltage characteristics in a wide length distribution. An intrinsic transition from tunneling to hopping charge transport mechanism was observed near 2.75 nm. A new transitional zone was observed in the long length molecular wires compared to short ones. This was not a simple transition between direct tunneling and field emission, which may provide new insights into transport mechanism investigations. Theoretical calculations provided an essential explanation for these phenomena in terms of molecular electronic structures.