Angular distribution and conversion of multi-keV L-shell X-ray sources produced from nanosecond laser irradiated thick-foil targets

An experimental study on the angular distribution and conversion of multi-keV X-ray sources produced from 2 ns-duration 527nm laser irradiated thick-foil targets on Shenguang II laser facility (SG-II) is reported. The angular distributions measured in front of the targets can be fitted with the function of f(theta) = alpha+ (1- alpha)cos(beta) theta (theta is the viewing angle relative to the target normal), where alpha = 0.41 +/- 0.014, beta = 0.77 +/- 0.04 for Ti K-shell X-ray Sources (similar to 4.75 keV for Ti K-shell), and alpha = 0.085 +/- 0.06, beta = 0.59 +/- 0.07 for Ag/Pd/Mo L-shell X-ray Sources (2-2.8 keV for Mo L-shell, 2.8-3.5 keV for Pd L-shell, and 3-3.8 keV for Ag L-shell). The isotropy of the angular-distribution of L-shell emission is worse than that of the K-shell emission at larger viewing angle (>70 degrees), due to its larger optical depth (stronger self-absorption) in the cold plasma side lobe Surrounding the central emission region, and in the central hot plasma region (emission region). There is no observable difference in the angular distributions of the L-shell X-ray emission among Ag, Pd, and Mo. The conversion efficiency of Ag/Pd/Mo L-shell X-ray sources is higher than that of the Ti K-shell X-ray sources, but the gain relative to the K-shell emission is not as high as that by using short pulse lasers. The conversion efficiency of the L-shell X-ray sources decrease, with increasing atomic numbers (or X-ray photon energy), similar to the behavior of the K-shell X-ray Source.

钛宝石中子辐照色心的研究

研究了中子辐照下钛宝石单晶体缺陷的形成及光学性能的变化。对温度梯度法(TGT)生长的钛宝石晶体进行中子辐照。中子能量为1．5MeV，剂量为4．32×10^18 neutrons／cm^2。辐照后194nm吸收峰强度增加,268nm吸收峰强度则降低。荧光谱检测中发现辐照使得420nm荧光峰强度明显降低，荧光峰位置也蓝移至414nm处。分析表明辐照使得钛宝石晶体内形成F^+缺陷，同时Ti^4+离子则转化成Ti^3+离子。辐照后的钛宝石在247C处有热释光TL出现，通过初始上升法计算出其陷阱深度为0．63eV。

Epitaxial growth of ZnO films on (100) and (001) gamma-LiAlO2 substrates by pulsed laser deposition

Structural and optical properties were investigated for ZnO films grown on (100) and (001) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable. The FWHM of XRD, stress in film and FWHM of UV PL spectra for ZnO films on (100) LAO show a decreasing with increasing substrate temperature from 300 to 600 degrees C. ZnO film fabricated at 600 degrees C has the greatest grain size, the smallest stress (0.47 Gpa) and PL FWHM value (similar to 85 meV). This means that the substrate temperature of 600 degrees C is optimum for ZnO film deposited on (100) LAO. Moreover, it was found that the UV PL spectra intensity of ZnO film is not only related to the grain size and stoichiometric, but also depends on the stress in the film.

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

Transparent polycrystalline MgO and TiO2 codoped Al2O3 ceramics were fabricated by conventional solid-state pressureless processing. The absorption, emission and excitation spectra of ( Mg, Ti : Al2O3 ceramics were measured. Owing to charge compensation of Mg2+, only UV absorption around 250nm was observed due to O2- -> Ti4+ charge transfer transitions (CT) when Ti content was low. As a result, the emission peaks of isolated Ti4+ ion located at 280-290nm and 410-420nm were observed. Besides absorption peak of V, ion, the characteristic absorption peak of V, ion centered at 490nm was observed in Mg, Ti) : Al2O3 ceramics when Ti content was high. The emission spectra of Ti3+, ion in polycrystalline Al2O3 ceramics coincide with that of Ti: Al2O3 single crystal.

Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Microelements in Potato and Lily Samples Studied by Laser-Induced Breakdown spectroscopy Technology

A LIBS setup was built in the Institute of Modern Physics. In our experiments, LIBS spectra produced by infrared radiation of Nd : YAG nanosecond laser with 100 and 150 mJ pulse energy, respectively, were measured by fiber optic spectrometer in the ranges of 230-430 run and 430-1080 nm with a delay time of 1.7 and gate width of 2 ms for potato and lily samples prepared by vacuum freeze-dried technique. The lines from different metal elements such as K, Ca, Na, Mg, Fe, Al, Mn and Ti, and nonmetal elements such as C, N, O and H, and some molecular spectra from C-2, CaO, and CN were identified according to their wavelengths. The relative content of the six microelements, Ca, Na, K, Fe, Al, and Mg in the samples were analyzed according to their representative line intensities. By comparison we found that there are higher relative content of Ca and Na in lily samples and higher relative content of Mg in potato samples. The experimental results showed that LIBS technique is a fast and effective means for measuring and comparing the contents of microelements in plant samples.

A Semi-Quantitative Analysis of Essential Micronutrient in Folium Lycii Using Laser-Induced Breakdown Spectroscopy Technique

In this paper, the capabilities of laser-induced break down spectroscopy (LIBS) for rapid analysis to multi-component plant are illustrated using a 1064 nm laser focused onto the surface of folium lycii. Based on homogeneous plasma assumption, nine of essential micronutrients in folium lycii are identified. Using Saha equation and Boltzmann plot method electron density and plasma temperature are obtained, and the irrelative concentration (Ca, Mg, Al, Si, Ti, Na, K, Li, and Sr) are obtained employing a semi-quantitative method.

He-like x-ray line emission from laser irradiated sources

Photon yields for the 1s(2)-1s2p (He-alpha) transition of He- like ions have been measured for laser irradiated, thin foils of Ti, V and Fe. The laser pulses were of 0.527 mum wavelength and of either 80 or 300 ps duration. The data shows significant shot-to-shot variation but the Ti data is broadly consistent with previous results. In this work, we extend the previous results to include, new elements, longer pulse lengths and yields measured for emission from both surfaces of the foils. We compare our data to simulations using a hydrodynamic code and a collisional radiative model.

Developments in X-ray laser pumping with travelling wave at Vulcan

Saturated output has been observed for both Ne and Ni-like X-ray lasers when Pumped in the transient mode. As these 'normal' transitions display very high gain, attempts have been made to observe a 2p --> 2s inner shell transition in Ne-like ions, which scale well towards the water window. Modelling of the pump conditions for Ge lasing at 6.2 run is presented. As the predicted gain is low the experiment was set up for 18 mm targets. Shots were taken on Ti, Fe, Ni and Ge. A similar to1.5 ps travelling wave pulse is applied at various times after the peak of a long, preforming Pulse. Various pump conditions were attempted but no inner shell X-ray laser was detected.

Characterization of a picosecond laser generated 4.5 keV TiK-alpha source for pulsed radiography

K alpha radiation generated by interaction of an ultrashort (1 ps) laser with thin (25 mu m) Ti foils at high intensity (2x10(16) W/cm(2)) is analyzed using data from a spherical Bragg crystal imager and a single hit charge-coupled device spectrometer together with Monte Carlo simulations of K alpha brightness. Laser to K alpha and electron conversion efficiencies have been determined. We have also measured an effective crystal reflectivity of 3.75 +/- 2%. Comparison of imager data with data from the relatively broadband single hit spectrometer has revealed a reduction in crystal collection efficiency for high K alpha yield. This is attributed to a shift in the K-shell spectrum due to Ti ionization. (c) 2005 American Institute of Physics.

Saturated operation of a transient collisional x-ray laser

Saturation of a low pump energy x-ray laser utilizing a transient inversion mechanism on the 3p-3s transition at 32.63 nm in Ne-like Ti has been demonstrated. A close to saturation amplification was simultaneously achieved for the 3d-3p, J=1-->1 transition at 30.15 nm. Small signal effective transient gain coefficients of g similar to 46 and similar to 35 cm(-1) and gain-length products of 16.7 and 16.9 for these lines were obtained. Experiments demonstrate that it is possible to achieve saturated laser action in a transient regime with Ne-like Ti for a pump energy as low as similar to 5 J.

Comparison between laser scanning tomography and computerised image analysis of the optic disc

Aims - To study the interchangeability of the measurements of the optic disc topography obtained by one computerised image analyser and one confocal laser tomographic scanner. Methods - One eye of 28 patients with glaucoma or glaucoma suspects was studied. All cases had simultaneous stereoscopic disc photographs taken with the fundus camera Topcon TRC-SS and optic disc examination with the Heidelberg retina tomograph (HRT) during the same visit. The optic disc photographs were digitised and analysed with the Topcon ImageNet (TI) system. Three variables of the optic disc topography provided by the TI and the HRT were compared - cup volume (CV), rim area (RA), and cup area to disc area ratio (CA/DA). Results - The mean values of CV and RA provided by the TI (0.52 (SD 0.32) mm and 1.58 (0.39) mm , respectively) were greater (p <0.01) than the mean values of CV and RA determined by the HRT (0.32 (0.25) mm , and 1.33 (0.47) mm , respectively). The mean value of CA/DA provided by the TI (0.42 (0.14)) and the HRT (0.42 (0.18)) was similar (p = 0.93). Correlation coefficients between measurements obtained by the two methods ranged from 0.53 to 0.73. Conclusion - There was a significant discrepancy in the measurements of rim area and cup volume of the optic disc obtained by a computerised image analyser and a laser scanning tomograph.