Determination of the laser-induced damage threshold of bulk polymer samples at 1.06 mu m using the pulsed photothermal deflection technique

A pulsed Nd-YAG laser beam is used to produce a transient refractive index gradient in air adjoining the plane surface of the sample material. This refractive index gradient is probed by a continuous He-Ne laser beam propagating parallel to the sample surface. The observed deflection signals produced by the probe beam exhibit drastic variations when the pump laser energy density crosses the damage threshold for the sample. The measurements are used to estimate the damage threshold for a few polymer samples. The present values are found to be in good agreement with those determined by other methods.

Evaluation of laser ablation threshold in polymer samples using pulsed photoacoustic technique

The acoustic signals generated in solids due to interaction with pulsed laser beam is used to determine the ablation threshold of bulk polymer samples of teflon (polytetrafluoroethylene) and nylon under the irradiation from a Q-switched Nd:YAG laser at 1.06µm wavelength. A suitably designed piezoelectric transducer is employed for the detection of photoacoustic (PA) signals generated in this process. It has been observed that an abrupt increase in the amplitude of the PA signal occurs at the ablation threshold. Also there exist distinct values for the threshold corresponding to different mechanisms operative in producing damages like surface morphology, bond breaking and melting processes at different laser energy densities.

Measurement of laser ablation threshold on doped BiSrCaCuO high temperature superconductors by the pulsed photothermal deflection technique

Laser‐induced damage and ablation thresholds of bulk superconducting samples of Bi2(SrCa)xCu3Oy(x=2, 2.2, 2.6, 2.8, 3) and Bi1.6 (Pb)xSr2Ca2Cu3 Oy (x=0, 0.1, 0.2, 0.3, 0.4) for irradiation with a 1.06 μm beam from a Nd‐YAG laser have been determined as a function of x by the pulsed photothermal deflection technique. The threshold values of power density for ablation as well as damage are found to increase with increasing values of x in both systems while in the Pb‐doped system the threshold values decrease above a specific value of x, coinciding with the point at which the Tc also begins to fall.  

Damage threshold determination of bulk polymer samples using pulsed photothermal deflection technique

Photothermal deflection technique was used for determining the laser damage threshold of polymer samples of teflon (PTFE) and nylon. The experiment was conducted using a Q-switched Nd-YAG laser operating at its fundamental wavelength (1-06μm, pulse width 10 nS FWHM) as irradiation source and a He-Ne laser as the probe beam, along with a position sensitive detector. The damage threshold values determined by photothermal deflection method were in good agreement with those determined by other methods.

Threshold Autoregressive Model for a Time Series Data

In this paper we try to fit a threshold autoregressive (TAR) model to time series data of monthly coconut oil prices at Cochin market. The procedure proposed by Tsay [7] for fitting the TAR model is briefly presented. The fitted model is compared with a simple autoregressive (AR) model. The results are in favour of TAR process. Thus the monthly coconut oil prices exhibit a type of non-linearity which can be accounted for by a threshold model.

Biclustering Gene Expression Data using MSR Difference Threshold

Biclustering is simultaneous clustering of both rows and columns of a data matrix. A measure called Mean Squared Residue (MSR) is used to simultaneously evaluate the coherence of rows and columns within a submatrix. In this paper a novel algorithm is developed for biclustering gene expression data using the newly introduced concept of MSR difference threshold. In the first step high quality bicluster seeds are generated using K-Means clustering algorithm. Then more genes and conditions (node) are added to the bicluster. Before adding a node the MSR X of the bicluster is calculated. After adding the node again the MSR Y is calculated. The added node is deleted if Y minus X is greater than MSR difference threshold or if Y is greater than MSR threshold which depends on the dataset. The MSR difference threshold is different for gene list and condition list and it depends on the dataset also. Proper values should be identified through experimentation in order to obtain biclusters of high quality. The results obtained on bench mark dataset clearly indicate that this algorithm is better than many of the existing biclustering algorithms

Fluorescence studies on the 3d-ionization threshold range in krypton

Krypton atoms were excited by photons in the energy range from the threshold for photoionization of the 3d-electrons up to 120 eV. and the fluorescence radiation in the spectral range from 780 to 965 A was observed and analyzed. Cross sections for the population of excited states in KrIII with at least one 4s-hole resulting from an Auger transition as the first decay step and for KrII satellites were determined. The energy dependence of the 3d-ionization cross section in the 3d{_5/2}- and the 3d{_3/2}-threshold range was derived from the experimental data. The cross sections for production of KrII states were found to follow the energy dependence of the 3d-cross sections.

Photoionization of Kr near 4s threshold: II. Intermediate-coupling theory

The Kr 4s-electron photoionization cross section as a function of the exciting-photon energy in the range between 30 eV and 90 eV was calculated using the configuration interaction (CI) technique in intermediate coupling. In the calculations the 4p spin-orbital interaction and corrections due to higher orders of perturbation theory (the so-called Coulomb interaction correlational decrease) were considered. Energies of Kr II states were calculated and agree with spectroscopic data within less than 10 meV. For some of the Kr II states new assignments were suggested on the basis of the largest component among the calculated CI wavefunctions.

Photoionization of Kr near the 4s threshold: IV. Photoionization through the autoionization of doubly-excited states

The photoionization cross sections for the production of the Kr II 4s state and Kr II satellite states were studied in the 4s ionization threshold region. The interference of direct photoionization and ionization through the autoionization decay of doubly-excited states was considered. In the calculations of doubly-excited state energies, performed by a configuration interaction technique, the 4p spin-orbit interaction and the (Kr II core)-(excited electron) Coulomb interaction were included. The theoretical cross sections are in many cases in good agreement with the measured values. Strong resonant features in the satellite spectra with threshold energies greater than 30 eV are predicted.

Threshold scan of the Ne 2s-electron photoionization cross edition

The photoionization of the Ne 2s-electrons was studied from threshold to 1 eV above threshold. The technique of photon-induced fluorescence spectroscopy was applied. Pronounced structures were observed resulting from autoionization of doubly excited atomic states. A threshold cross section of 0.17 Mb was determined.

Photoionization of Kr near the 4s threshold: I. Experiment and LS coupling theory

Absolute cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states of the Kr^+ ion were measured in the 4s-electron threshold region by photon-induced fluorescence spectroscopy (PIFS). The cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states were also calculated, as well as the 4p^4nln'l' doubly excited states, in the frame of LS-coupling many-body technique. The cross sections of the doubly-excited atomic states were used to illustrate the pronounced contributions of the latter to the photoionization process, evident from the measurements. The comparison of theory and experiment led to conclusions about the origin of the main features observed in the experiment.

Threshold behaviour of L x-ray excitation in Xe - Ag collisions

In the collision system Xe - Ag, the thresholds for excitation of quasimolecular L radiation and characteristic Ag L radiation have been found to lie at about 5 MeV and 1 MeV, respectively. These results are discussed on the basis of ab initio calculations of the screened interaction potential and the electron-correlation diagram.

PILT Threshold 1

Files used for and during the Threshold 1 workshop

PILT Threshold 2

Files used for and during the Threshold 2 workshop

Desarrollo de un programa de enseñanza asistida por ordenador de control automático.

Programa informático de enseñanza-aprendizaje de control automático asistido por ordenador, de carácter tutorial didáctico e interactivo. Realizado por profesores de la Escuela Técnica Superior de Béjar y la Facultad de Ciencias de Salamanca. Se ha utilizado el programa de cálculo científico y visualización gráfica MATLAB -ampliamente utilizado y conocido en entornos científicos y académicos- en la enseñanza y aprendizaje de control automático, sin necesidad de programar con tal programa. Se ha realizado programación de aplicaciones informáticas basada en objetos mediante visual-basic. Programa informático softcontrol. Las características de la innovación diseñada es un programa interactivo de enseñanza y aprendizaje de control automático con ejemplos de ejercicios resueltos y ejercicios abiertos a la resolución en linea por parte del usuario. Contiene manual del usuario y manual de instalación.