Plasma-driven self-organization of Ni nanodot arrays on Si(100)

The results of the combined experimental and numerical study suggest that nonequilibrium plasma-driven self-organization leads to better size and positional uniformity of nickel nanodot arrays on a Si(100) surface compared with neutral gas-based processes under similar conditions. This phenomenon is explained by introducing the absorption zone patterns, whose areas relative to the small nanodot sizes become larger when the surface is charged. Our results suggest that strongly nonequilibrium and higher-complexity plasma systems can be used to improve ordering and size uniformity in nanodot arrays of various materials, a common and seemingly irresolvable problem in self-organized systems of small nanoparticles. © 2008 American Institute of Physics.

Simulation and visualization of self-assembled nanodevice networks synthesized via plasma–surface interaction

Using advanced visualization techniques, a comprehensive visualization of all the stages of the self-organized growth of internetworked nanostructures on plasma-exposed surface has been made. Atomistic kinetic Monte Carlo simulation for the initial stage of deposition, with 3-D visualization of the whole system and half-tone visualization of the density field of the adsorbed atoms, makes it possible to implement a multiscale predictive modeling of the development of the nanoscale system.

Assembly and self-organization of nanomaterials

The increasing interest in nanoscience and nanotechnology has prompted intense investigations into appropriate fabrication techniques. Self-organized, bottom-up growth of nanomaterials using plasma nanofabrication techniques1–10 has proven to be one of the most promising approaches for the construction of precisely tailored nanostructures (i.e., quantum dots,11–13 nanotubes,14–17 nanowires,18–20 etc.) arrays. Thus the primary aim of this chapter is to show how plasmas may be used to achieve a high level of control during the self-organized growth of a range of nanomaterials, from zero-dimensional quantum dots (Section 15.2) to one- and two-dimensional nanomaterials (Section 15.3) to nanostructured films (Section 15.4)...

Coordination-driven self-assembly of 2D-metallamacrocycles using a shape-selective Pt(2)(II)-organometallic 90 degrees acceptor: design, synthesis and sensing study

Synthesis of a series of two-dimensional metallamacrocycles via coordination-driven self-assembly of a shape-selective Pt(2)(II)-molecular building unit incorporating carbazole-ethynyl functionality is described. An equimolar (1 : 1) combination of a Pt(2)(II)-organometallic 90 degrees acceptor, 1, with rigid linear ditopic donors (L(a) and L(b)) afforded [4 + 4] self-assembled octanuclear molecular squares, 2 and 3, in quantitative yields, respectively [L(a) = 4,4'-bipyridine; L(b) = trans-1,2-bis(4-pyridyl)ethylene]. Conversely, a similar treatment of 1 with an amide-based unsymmetrical flexible ditopic donor, L(c), resulted in the formation of a [2 + 2] self-sorted molecular rhomboid (4a) as a single product [L(c) = N-(4-pyridyl)isonicotinamide]. Despite the possibility of several linkage isomeric macrocycles (rhomboid, triangle and square) due to the different connectivity of L(c), the formation of a single and symmetrical molecular rhomboid (4a) as the only product is an interesting observation. All the self-assembled macrocycles (2, 3 and 4a) were fully characterized by multinuclear NMR ((1)H and (31)P) and ESI-MS analysis. Further structural insights about the size and shape of the macrocycles were obtained through energy minimization using density functional theory (DFT) calculations. Decoration of the starting carbazole building unit with Pt-ethynyl functionality enriches the assemblies to be more p-electron rich and luminescent in nature. Macrocycles 2 and 3 could sense the presence of electron deficient nitroaromatics in solution by quenching of the initial intensity upon gradual addition of picric acid (PA). They exhibited the largest quenching response with high selectivity for nitroaromatics compared to several other electron deficient aromatics tested.

SELF-ORGANIZATION AND FRICTION DURING SLIDING

In self-organized sliding processes, the surfaces align to each other during sliding. This alignment leads to a more ordered contact state and significantly influences the frictional behavior. To understand the self-organization sliding processes, experiments were conducted on a pin-on-plate reciprocating sliding tester for various numbers of cycles. In the experiments, soft magnesium pins were slid against hard steel plates of various surface textures (undirectional, 8-ground, and random). Experimental results showed that the transfer layer formation on the steel plates increased with increasing number of cycles for all surfaces textures under both dry and lubricated conditions. The friction also increased with the number of cycles under dry conditions for all of the textures studied. During lubricated conditions, the friction decreased for unidirectional and 8-ground surfaces and increased for random surfaces with the number of cycles. Furthermore, the friction and transfer layer formation depend on the surface textures under both dry and lubricated conditions during the first few sliding cycles. Later on, it is less dependent of surface textures. The variation in the coefficient of friction under both dry and lubrication conditions were attributed to the self-organization process that occurred during repeated sliding.

A Nanomechanical Device Based on Light-Driven Proton Pumps

In this paper, a hybrid device based on a microcantilever interfaced with bacteriorhodopsin (bR) is constructed. The microcantilever, on which the highly oriented bR film is self-assembled, undergoes controllable and reversible bending when the light-driven proton pump protein, bR, on the microcantilever surface is activated by visible light. Several control experiments are carried out to preclude the influence of heat and photothermal effects. It is shown that the nanomechanical motion is induced by the resulting gradient of protons, which are transported from the KCl solution on the cytoplasmic side of the bR film towards the extracellular side of the bR film. Along with a simple physical interpretation, the microfabricated cantilever interfaced with the organized molecular film of bR can simulate the natural machinery in converting solar energy to mechanical energy.

Self-organization of reflexive behavior from spontaneous motor activity.

In mammals, the development of reflexes is often regarded as an innate process. However, recent findings show that fetuses are endowed with favorable conditions for ontogenetic development. In this article, we hypothesize that the circuitry of at least some mammalian reflexes can be self-organized from the sensory and motor interactions brought forth in a musculoskeletal system. We focus mainly on three reflexes: the myotatic reflex, the reciprocal inhibition reflex, and the reverse myotatic reflex. To test our hypothesis, we conducted a set of experiments on a simulated musculoskeletal system using pairs of agonist and antagonist muscles. The reflex connectivity is obtained by producing spontaneous motor activity in each muscle and by correlating the resulting sensor and motor signals. Our results show that, under biologically plausible conditions, the reflex circuitry thus obtained is consistent with that identified in relation to the analogous mammalian reflexes. In addition, they show that the reflex connectivity obtained depends on the morphology of the musculoskeletal system as well as on the environment that it is embedded in.

Growth of nano-structures on composition-modulated InAlAs surfaces

InAs self-organized nanostructures were grown with variant deposition thickness and growth rate on closely matched InAlAs/InP by molecular-beam epitaxy. The structural properties. of InAs and InAlAs layer were studied. It is found that the InAs morphology is insensitive to the growth conditions. Transmission electron microscopy and reflectance difference spectroscopy measurements show that the InAlAs matrix presents lateral composition modulation which gives birth to surface anisotropy. Based on the dependence of the InAs morphology on the anisotropy of the InAlAs layer, a modified Stranski-Krastanow growth mode is presented to describe the growth of the nanostructure on a composition-modulated surface.

Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers

Size self-scaling effect in stacked InAs/In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 mum, is also found closely correlated to the size self-scaling effect. This phenomenon can be well explained in the context of formation mechanism and growth features of the InAs/InAlAs nanowire arrays. The finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. (C) 2004 American Institute of Physics.

InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate

InAs self-organized nanostructures in In0.52Al0.48As matrix have been grown on InP (001) substrates by molecular beam epitaxy. The morphologies of the nanostructures are found to be strongly dependent on the growth rate of the InAs layer. By increasing the growth rate from 0.005 to 0.35 ML/s, the morphology of the nanostructure changes from wire to elongated dot and then changes back to wire again. Polarized photoluminescence of the InAs quantum wires and quantum dots are performed at 77 K, which are characterized by strong optical anisotropies. (C) 2003 Elsevier B.V. All rights reserved.

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

Selective growth of InAs islands on patterned GaAs (100) substrate

By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.

Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.

A novel line-order of InAs quantum dots on GaAs

A novel line-order of InAs quantum dots (QDs) along the [1, 1, 0] direction on GaAs substrate has been prepared by self-organized growth. After 2.5 monolayer InAs deposition, QDs in the first layer of multi-layer samples started to gather in a line. Owing to the action of strong stress between layers, almost all the dots of the fourth layer gathered in lines. The dots lining up tightly are actually one-dimensional superlattice of QDs, of which the density of electronic states is different from that of isolated QDs or quantum wires. The photoluminescence spectra of our multi-layer QD sample exhibited a feature of very broad band so that it is suitable for the active medium of super luminescent diode. The reason of dots lining up is attributed to the hill-and-valley structure of the buffer, anisotropy and different diffusion rates in the different directions on the buffer and strong stress between QD layers. (C) 2002 Published by Elsevier Science B. V.

Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

We have fabricated self-organized InAs/GaAs quantum dots (QDs) capped by 1 nm In0.2Al0.8As and 5 nm In0.2Ga0.8As strain-reducing layer (SRL). The luminescence emission at a long wavelength of 1.33 mum with narrower half width is realized. A wider energy separation between the ground and first excited radiative transitions of up to 102meV was observed at room temperature. Furthermore, the comparative study proves that luminescence properties of InAs/GaAs QDs overgrown with combined InAlAs and InGaAs SRLs are much better than that of one capped with InGaAs or InAlAs SRL. (C) 2002 Elsevier Science B.V. All rights reserved.