Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Structural and electrical properties of SrBi2(Ta0.5Nb0.5)(2)O-9 thin films

SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 degrees C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (P-r) and coercive field (E-c) were 5.1 mu C/cm(2) and 96 kV/cm, respectively. (C) 2007 Published by Elsevier B.V.

Bulk and high-energy ball-milled Gd5Si2Ge2: Comparative study of magnetic and magnetocaloric properties

High-energy ball milling was employed to produce small particles of Gd5Si2Ge2. Magnetic and magnetocaloric properties of the ball-milled and bulk Gd5Si2Ge2 samples were investigated through the magnetization measurements. When compared to the bulk material, a significant decrease in saturation magnetization and magnetocaloric effect (-Delta S-max = 4 vs. 20 J/kgK for Delta H = 0-5 T) is observed even after the relatively short ball milling time of 4 h which produced particles with an average size of ca. 0.5 mu m. The ball-milled samples appear to loose a first-order structural transition, present in bulk Gd5Si2Ge2, and display a superparamagnetic behaviour below the corresponding Curie temperatures. (C) 2010 Elsevier Masson SAS. All rights reserved.

The effect of TiO(2) on the microstructural and electrical properties of low voltage varistor based on (Sn,Ti)O(2) ceramics

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Effect of in concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450°C

Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450°C on glass substrates from solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. © 2000 Elsevier Science B.V. All rights reserved.

Structural and electrical properties of strontium barium niobate thin films crystallized by conventional furnace and rapid-thermal annealing process

Strontium barium niobate (SBN) thin films were crystallized by conventional electric furnace annealing and by rapid-thermal annealing (RTA) at different temperatures. The average grain size of films was 70 nm and thickness around 500 nm. Using x-ray diffraction, we identified the presence of polycrystalline SBN phase for films annealed from 500 to 700 °C in both cases. Phases such as SrNb2O6 and BaNb2O6 were predominantly crystallized in films annealed at 500 °C, disappearing at higher temperatures. Dielectric and ferroelectric parameters obtained from films crystallized by conventional furnace and RTA presented essentially the same values.

Study of the thermo-mechanical and electrical properties of conducting composites containing natural rubber and carbon black

This work shows the preparation and characterization of composites obtained by mixing natural rubber (NR) and carbon black (CB) in different percentages aiming suitable mechanical properties, processability and electrical conductivity for future applications as transducers in pressure sensors. The composites NR/CB are characterized through dc conductivity, thermal analysis using differential scanning calorimetry (DSC), dynamic mechanical thermal analysis (DMA), thermogravimetry (TGA) and stress-strain test. The electrical conductivity changed from 10-9 to 10 Sm-1 depending on the percentage of CB in the composite. Besides, it was found a linear (and reversible) dependence of the conductivity on the applied pressure in the range from 0 to 1.6 MPa for the sample 80/20 (NR/CB wt%).

Microstructural and electrical properties of the sofc anode precursor YSZ/NiO composite prepared by A liquid mixture technique

A detailed study of the microstructural and electrical properties of the yttria-stabilized zirconia/nickel oxide (YSZ/NiO) composite was performed. This material is the precursor to the solid oxide fuel cell anode cermet YSZ/Ni. A liquid mixture technique was developed to produce the YSZ/NiO composite to fabricate high-performance SOFC anodes. This technique resulted in fine and homogeneous powders and specimens with high electrical conductivity. The combined results showed that this technique is suitable for the production of the anode cermet.

Chemical stability and electrical properties of Nb doped BaCe 0.9Y 0.1O 3-δ as a high temperature proton conducting electrolyte for IT-SOFC

BaCe 0.9-xNb xY 0.1O 3-δ (where x=0, 0.01, 0.03 and 0.05) powders were synthesized by solid-state reaction to investigate the influence of Nb concentration on chemical stability and electrical properties of the sintered samples. The dense electrolyte pellets were formed from the powders after being uniaxially pressed and sintered at 1550 °C. The electrical conductivities determined by impedance measurements in temperature range of 550-750 °C in different atmospheres (dry argon and wet hydrogen) showed a decreasing trend with an increase of Nb content. For all samples higher conductivities were observed in the wet hydrogen than in dry argon atmosphere. The chemical stability was enhanced with increasing of Nb concentration. It was found that BaCe 0.87Nb 0.03Y 0.1O 3-δ is the optimal composition that satisfies the opposite demands for electrical conductivity and chemical stability, reaching 0.8×10 -2 S cm -1 in wet hydrogen at 650 °C compared to 1.01×10 -2 S cm -1 for undoped electrolyte. © 2012 Elsevier Ltd and Techna Group S.r.l.

Influence of the indium concentration on microstructural and electrical properties of proton conducting NiO-BaCe0.9-xIn xY0.1O3-δ cermet anodes for IT-SOFC application

Optimization of the major properties of anodes based on proton conductors, such as microstructure, conductivity and chemical stability, is yet to be achieved. In this study we investigated the influence of indium on the chemical stability, microstructural and electrical characteristics of proton conducting NiO-BaCe0.9-xInxY0.1O 3-δ (NiO-BCIYx) anodes. Four compositions of cermet anode substrates NiO-BCIYx were prepared using the method of evaporation and decomposition of solutions and suspensions (EDSS). Sintered anode substrates were reduced and their microstructural and electrical properties were examined before and after reduction as a function of the amount of indium. Anode substrates tested on chemical stability in the CO2 atmosphere showed high stability compared to anode substrates based on commonly used doped barium cerates. Microstructural properties of the anode pellets before and after testing in CO2 were investigated using X-ray diffraction analysis. Impedance spectroscopy measurements were used for evaluation of electrical properties of the anode pellets and the conductivity values of reduced anodes of more than 14 S cm-1 at 600 °C confirmed percolations through Ni particles. Under fuel cell operating conditions, the cell with a Ni-BCIY20 anode achieved the highest performance, demonstrating a peak power density 223 mW/cm2 at 700 °C confirming the functionality of Ni-BCIY anodes.© 2013 Elsevier B.V. All rights reserved.

Morphotropic phase boundary and electrical properties of 1-x[Bi 0.5Na0.5]TiO3 -xBa[Zr0.25Ti 0.75]O3 lead-free piezoelectric ceramics

Lead-free solid solutions (1-x)Bi0.5Na0.5TiO 3 (BNT)-xBaZr0.25Ti0.75O3 (BZT) (x=0, 0.01, 0.03, 0.05, and 0.07) were prepared by the solid state reaction method. X-ray diffraction (XRD) and Rietveld refinement analyses of 1-x(BNT)-x(BZT) solid solution ceramic were employed to study the structure of these systems. A morphotropic phase boundary (MPB) between rhombohedral and cubic structures occured at the composition x=0.05. Raman spectroscopy exhibited a splitting of the (TO3) mode at x=0.05 and confirmed the presence of MPB region. Scanning electron microcopy (SEM) images showed a change in the grain shape with the increase of BZT into the BNT matrix lattice. The temperature dependent dielectric study showed a gradual increase in dielectric constant up to x=0.05 and then decrease with further increase in BZT content. Maximum coercive field, remanent polarization and high piezoelectric constant were observed at x=0.05. Both the structural and electrical properties show that the solid solution has an MPB around x=0.05. © 2012 Elsevier Ltd and Techna Group S.r.l.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Structural refinement, optical and electrical properties of [Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 ceramics

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