Tunability of electronic states in ultrathin gold nanowires

The electronic state in ultrathin gold nanowires is tuned by careful engineering of the device architecture via a chemical methodology. The electrons are localized to an insulating state (showing variable range hopping transport) by simply bringing them close to the substrate, while the insertion of an interlayer leads to a Tomonaga Luttinger liquid state.

Growth of Germanium Nanowires by electron beam evaporation

Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.

Morphology dependent oxygen reduction activity of titanium carbide: bulk vs. nanowires

Titanium carbide (TiC) possesses fascinating properties like high electrical conductivity and high mechanical strength coupled with high corrosion resistance and stability in acidic and alkaline environments. The present study demonstrates the tunability of mechanistic aspects of oxygen reduction reaction (ORR) using TiC nanostructures. One dimensional TiC nanostructures (TiC-NW) have been synthesized using a simple, hydrothermal method and used as a catalyst for ORR. Shape dependent electroactivity is demonstrated by comparing the activity of TiC-NW with its bulk counterparts. Comparative studies reveal higher ORR activities in the case of 1D TiC-NW involving similar to 4 electrons showing efficient reduction of molecular oxygen. Excellent stability and high methanol tolerance with good selectivity for ORR is reported.

Transmission electron microscopy study of Ni-rich, Ag-Ni nanowires

Present work provides an electrodeposition based methodology for synthesizing Ni-rich, Ag-Ni nanowires using an alumina template. Ag-Ni system shows negligible solid solubility in the bulk. Detailed structural and compositional characterization of as-synthesized nanowires using transmission electron microscopy technique revealed a two phase microstructure. Regions along and near the nanowire axis contained crystalline Ag-Ni solid solution phase with Ag-rich composition. Whereas, regions away from the axis and near the nanowire boundary predominantly contained nanocrystalline Ni-rich, Ni-Ag solid solution phase. (C) 2013 Elsevier B. V. All rights reserved.

Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation

Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

Ferromagnetic Resonance Study on a Grid of Permalloy Nanowires

We report ferromagnetic resonance (FMR) study on a grid formed with permalloy nanowires to understand the spin wave dynamics. The presence of two sets of magnetic nanowires perpendicular to each other in the same device enables better control over spin waves. The grid was fabricated using e-beam lithography followed by DC-Magnetron sputtering and liftoff technique. It has dimensions of 800 +/- 10 and 400 +/- 10 nm as periods along X and Y directions with permalloy wires of width 145 +/- 10 nm. FMR studies were done at X-band (9.4 GHz) with the field sweep up to 1 Tesla. The in-plane angular variation of resonant fields shows that there are two well separated modes present, indicating two uniaxial anisotropy axes which are perpendicular to each other. The variation in the intensities in the FMR signal w.r.t. the grid angle is used to describe the spin wave confinement in different regions of the grid. We also explained the asymmetry in the magnetic properties caused by the geometrical property of the rectangular grid and the origin for the peak splitting for the modes occurring at higher resonant fields. Micromagnetic simulations based on OOMMF with two dimensional periodic boundary conditions (2D-PBC) are used to support our experimental findings.

Simple theoretical analysis of the effective electron mass in semiconductor nanowires

In this paper we study the effective electron mass (EEM) in Nano wires (NWs) of nonlinear optical materials on the basis of newly formulated electron dispersion relation by considering all types of anisotropies of the energy band constants within the framework of k . p formalism. The results for NWs of III-V, ternary and quaternary semiconductors form special cases of our generalized analysis. We have also investigated the EEM in NWs of Bi, IV-VI, stressed Kane type materials, Ge, GaSb and Bi2Te3 by formulating the appropriate 1D dispersion law in each case by considering the influence of energy band constants in the respective cases. It has been found that the 1D EEM in nonlinear optical materials depend on the size quantum numbers and Fermi energy due to the anisotropic spin orbit splitting constant and the crystal field splitting respectively. The 1D EEM is Bi, IV-VI, stressed Kane type semiconductors and Ge also depends on both the Fermi energy and the size quantum numbers which are the characteristic features of such NWs. The EEM increases with increase in concentration and decreasing film thickness and for ternary and quaternary compounds the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.

Novel co-evaporation approach for the growth of Sb doped SnO2 nanowires

Antimony doped tin oxide (Sb:SnO2) nanowires were grown by thermal and e-beam assisted co-evaporation of Sb and Sn in the presence of oxygen at a low substrate temperature of 450 degrees C. The field emission scanning electron microscopy study revealed that the nanowires had a length and diameter of 2-4 mu m and 20-60 nm respectively. Transmission electron microscopy study revealed the single crystalline nature of the nanowires; energy dispersive X-ray spectroscopy (EDS) and EDS mapping on the nanowires confirmed the presence of Sb doping in the nanowires. UV light detection study on the doped SnO2 nanowire films exhibited fast response and recovery time compared to undoped SnO2 nanowire films. This is an innovative and simple method to grow doped SnO2 nanowires.

Ultralong ZnO nanowires: problems and prospects

ZnO is a unique material with numerous applications. There has been great interest in the synthesis of long nanowires to explore new technology coupled with length. But the quest to enhance the length is limited by various experimental shortcomings such as catalytic poisoning, degradation of the precursors and growth in all possible directions. This review article focuses on the growth of ultralong ZnO nanowires along with possible methodologies to overcome these limitations.

Facile synthesis of carbon doped TiO2 nanowires without an external carbon source and their opto-electronic properties

The present study demonstrates a simple protocol for the preparation of one dimensional (1D) oxidized titanium carbide nanowires and their opto-electronic properties. The oxidized titanium carbide nanowires (Ox-TiC-NW) are prepared from TiC nanowires (TiC-NW) that are in turn synthesized from micron sized TiC particles using the solvothermal technique. The Ox-TiC-NW is characterized by X-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Raman spectroscopy. Thermal oxidation of TiC-NW yields carbon doped TiO2-NW (C-TiO2-NW), a simple methodology to obtain 1D C-TiO2-NW. Temperature dependent Raman spectra reveal characteristic bands for TiO2-NW. Electrical characterization of individual C-TiO2-NW is performed by fabricating a device structure using the focused ion beam deposition technique. The opto-electronic properties of individual C-TiO2-NW demonstrate visible light activity and the parameters obtained from photoconductivity measurements reveal very good sensitivity. This methodology opens up the possibility of using C-TiO2-NW in electronic and opto-electronic device applications.

Atomic Structure of Quantum Gold Nanowires: Quantification of the Lattice Strain

Theoretical studies exist to compute the atomic arrangement in gold nanowires and the influence on their electronic behavior with decreasing diameter. Experimental studies, e.g., by transmission electron microscopy, on chemically synthesized ultrafine wires are however lacking owing to the unavailability of suitable protocols for sample preparation and the stability of the wires under electron beam irradiation. In this work, we present an atomic scale structural investigation on quantum single crystalline gold nanowires of 2 nm diameter, chemically prepared on a carbon film grid. Using low dose aberration-corrected high resolution (S)TEM, we observe an inhomogeneous strain distribution in the crystal, largely concentrated at the twin boundaries and the surface along with the presence of facets and surface steps leading to a noncircular cross section of the wires. These structural aspects are critical inputs needed to determine their unique electronic character and their potential as a suitable catalyst material. Furthermore, electron-beam-induced structural changes at the atomic scale, having implications on their mechanical behavior and their suitability as interconnects, are discussed.

A room temperature, templated synthesis of lanthanide trifluoride nanoparticles and their unusual self-assembly

A new methodology has been developed for synthesizing lanthanide trifluoride (LnF(3)) nanoparticles using a simple diffusion technique. The approach uses a lanthanide based hydrogel matrix to control the kinetics of the reaction, which also acts as a stabilizing platform, thus enabling the room temperature, in situ synthesis of finely sized (3-5 nm), monodisperse nanoparticles that were found to form in an ordered pattern on the gel fibers.

Self Catalytic Growth of Indium Oxide (In2O3) Nanowires by Resistive Thermal Evaporation

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

Electrodeposition of Ag-Ni-Fe Nanowires

Present work provides an electrodeposition based methodology for synthesizing Ag-Ni-Fe nanowires. Nanowire morphology was achieved by using an anodic alumina membrane having cylindrical pores of similar to 200 nm diameter. Compositional analysis at a single nanowire level revealed a fairly uniform distribution of component elements in the nanowire volume. Structural characterization strongly indicated toward a presence of randomly oriented, non-equilibrium, nano-crystalline phase volume inside the nanowires. Magnetic characterization revealed a soft magnetic character for the as-synthesized Ag-Ni-Fe nanowires. (C) 2014 The Electrochemical Society. All rights reserved.