Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires
Data(s) |
30/04/2016
30/04/2016
20/04/2016
26/04/2016
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Resumo |
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9.2[thinsp]at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour-liquid-solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230[thinsp][deg]C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth. |
Formato |
application/pdf |
Identificador |
BISWAS, S., DOHERTY, J., SALADUKHA, D., RAMASSE, Q., MAJUMDAR, D., UPMANYU, M., SINGHA, A., OCHALSKI, T., MORRIS, M. A. & HOLMES, J. D. 2016. Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires. Nature Communications, 7 :11405. doi: 10.1038/ncomms11405 7 1 12 2041-1723 http://hdl.handle.net/10468/2505 10.1038/ncomms11405 Nature Communications 11405 |
Idioma(s) |
en |
Publicador |
Nature Publishing Group |
Relação |
http://www.nature.com/ncomms/2016/160420/ncomms11405/full/ncomms11405.html |
Direitos |
This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ http://creativecommons.org/licenses/by/4.0/ |
Palavras-Chave | #Physical sciences #Materials science #Nanotechnology #Physical chemistry |
Tipo |
Article (peer-reviewed) |