Self-aligned Coupled Waveguide Distributed Bragg Reflector Lasers

A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a ～80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.

Tunable Distributed Bragg Reflector Laser Fabricated by Bundle Integrated Guide

The tunable BIG-RW distributed Bragge reflector lasers with two different coupling coefficient gratings are proposed and fabricated.The threshold current of the laser is 38mA and the output power is more than 8mW.The tunable range of tthe laser is 3.2nm and the side moded suppression ratio is more than 30dB.The variation of the output power within the tunable wavelength range is less than 0.3dB

Wavelength Tuning in Two-Section Distributed Bragg Reflector Laser by Selective Intermixing of InGaAp-InGaAsP Quantum Well Structure

The two-section tunable ridge waveguide distributed Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented. The threshold current of the laser is 51mA. The tunable range of the laser is 4.6nm, and the side mode suppression ratio (SMSR) is 40dB.

光纤 Bragg 光栅的研究

分析了光纤Bragg光栅的特性，讨论了其结构参数。通过紫外光写入的方式，在普通单模光纤上制备了光纤Bragg光栅。典型的光纤Bragg光栅在1.56μm波段的反射率达99%，带宽0.6nm。

Bragg光栅在光子集成器件中的应用及研制

于2010-11-23批量导入

光纤Bragg光栅透射谱测量中的激射现象

报道用LED作为宽带光源测量光纤Bragg光栅透射谱时观测到的反常激射峰现象, 并根据实验结果给出了合理的解释。峰值的出现是由于LDE 和光纤光栅耦合形成了外腔激光器结构,并在光纤光栅的Bragg波长处产生激射而形成,激射峰的峰值功率随LED驱动电流变化过程中明显的阈值行为有力地证明了这一点。

用于共振腔光电探测器的Si基Bragg反射器

Si基共振腔型光电探测器的关键工艺是隐埋Bragg反射器镜面的制备。用PECVD方法在Si衬底上制备了SiO_xN_y/Si Bragg反射器，研究了Bragg反射器的反射谱和退火行为。

高性能紫外写入光纤Bragg光栅的研制

采用未经任何特殊处理的B/Ge双掺光纤，以248nm的KrF准分子激光为光源用相位掩模技术研制出反射率大于98.5%的光纤Bragg光栅，并且使光栅反射谱的边瓣抑制达-20dB以下，其3dB带宽小于0.4nm，具有良好的滤波特性。

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Flat Surface Plasmon Polariton Bands in Bragg Grating Waveguide for Slow Light

The formations of the surface plasmonpolariton (SPP) bands in metal/air/metal (MAM) sub-wavelength plasmonic grating waveguide (PGW) are proposed. The band gaps originating from the highly localized resonances inside the grooves can be simply estimated from the round trip phase condition. Due to the overlap of the localized SPPs between the neighboring grooves, a Bloch mode forms in the bandgap and can be engineered to build a very flat dispersion for slow light. A chirped PGW with groove depth varying is also demonstrated to trap light, which is validated by finite-difference time-domain (FDTD) simulations with both continuous and pulse excitations.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

双重辐射源~9C束流在其Bragg峰区对细胞致死效应增强的生物物理机制

相对12C束流而言,β缓发粒子衰变放射性9C束流在其Bragg峰区附近深度对细胞的致死效应明显增强,这已经在我们先前的研究中证实.9C束流的相对生物学效应(RBE)较12C束流要大1倍以上.本研究旨在探讨造成这一重要实验现象的生物物理机理.首先,建立模型计算了用于实验时产生的9C束流的阻止沉积几率密度分布,模型考虑了初始束流的动量分布,束流随贯穿深度增加由核反应导致的离子通量衰减和能量损失岐离等效应.发现9C束流对细胞致死效应增强的区域出现在入射9C离子的阻止沉积区域.其次,以9C束流入射处剂量为1Gy为例,根据计算得到的入射9C离子阻止分布几率密度推导了9C束流在不同贯穿深度上的沉积离子密度,进而得到了不同深度上每细胞内平均沉积9C离子数;同时,由相近剂量平均传能线密度(LET)深度上9C和12C束流实验上测得的细胞存活率推导出了9C及12C束流在这些深度上导致的每细胞平均致死事件数.研究结果表明,在照射剂量相同时每细胞平均沉积9C离子数与9C及12C束流每细胞平均致死事件数之差竟相吻合.由此推测,一个沉积9C离子将造成该细胞死亡.考虑到由9C衰变而发射低能粒子的性质,9C离子细胞中沉积可能会在该细胞中造成团簇损伤,因而本研究结果可作为辐射团簇损伤高效细胞致死的间接证据.