Tissue distributions and seasonal dynamics of the hepatotoxic microcystins-LR and -RR in a freshwater snail (Bellamya aeruginosa) from a large shallow, eutrophic lake of the subtropical China

Tissue distributions and seasonal dynamics of the hepatotoxic microcystins-LR and -RR in a freshwater snail (Bellamya aeruginosa) were studied monthly in a large shallow, eutrophic lake of the subtropical China during June-November, 2003. Microcystins (MCs) were quantitatively determined by High-Performance Liquid Chromatography (HPLC) with a qualitative analysis by a Finnigan LC-MS system. On the average of the study period, hepatopancreas was the highest in MC contents (mean 4.14 and range 1.06-7.42 mug g(-1) DW), followed by digestive tracts (mean 1.69 and range 0.8-4.54 mug g(-1) DW) and gonad (mean 0.715 and range 0-2.62 mug g(-1) DW), whereas foot was the least (mean 0.01 and range 0-0.06 mug g(-1) DW). There was a positive correlation in MC contents between digestive tracts and hepatopancreas. A constantly higher MC content in hepatopancreas than in digestive tracts indicates a substantial bioaccumulation of MCs in the hepatopancreas of the snail. The average ratio of MC-LR/MC-RR showed a steady increase from digestive tracts (0.44) to hepatopancreas (0.63) and to gonad (0.96), suggesting that MC-LR was more resistant to degradation in the snail. Since most MCs were present in the hepatopancreas, digestive tracts and gonad with only a very small amount in the edible foot, the risk to human health may not be significant if these toxic parts are removed prior to snail consumption. However, the possible transference of toxins along food chains should not be a negligible concern. (C) 2004 Elsevier Ltd. All rights reserved.

A novel ultra low power temperature sensor for UHF RFID tag chip

A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

RELATION BETWEEN THE METASTABILITY OF EL2 AND THE PHOTOSENSITIVITY OF LOCAL VIBRATIONAL-MODES IN SEMIINSULATING GAAS

Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVAs) center which has three modes at 730 cm(-1) (A), 715 cm(-1) (B), and 714 cm(-1) (C), respectively, a suggested NH center related to a line at 983 cm(-1) (X(1)), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresponding to a group of peaks in the region of 2900-3500 cm(-1). The photosensitivity of various local vibration centers was observed to have similar time dependence under near-infrared illumination and was suggested to be due to their charge-state interconversion. Mainly described in this work is the effect of the 1.25-eV illumination. It is confirmed that this photoinduced kinetic process results from both electron capture and hole capture, which are closely related to the photoionization behavior and metastability of the EL2 center.

氧离子束辅助激光淀积生长ZnO/Si薄膜深度剖析

对于在Si(111)上用氧离子束辅助(O~+-assisted)脉冲激光淀积(PLD)生长的ZnO薄膜,用X射线光电子能谱(XPS)深度剖析方法对长成的样品进行了异位测试,分析了导致各峰峰位能移的因素;通过异位与原位XPS谱图的比较,指出O+-assisted PLD法生成的ZnO薄膜中存在孔隙;指出生长出的ZnO薄膜中含si成分的厚度不超过18 nm;同时探讨了在长成的ZnO/Si上继续生长GaN薄膜的可行性.

粒子束辐照在AlGaAs/GaAs量子阱材料中引入的深能级缺陷

教育部骨干教师基金,国家自然科学基金

晶格热振动对极性半导体膜中电子-表面声子强耦合极化子自陷能的影响

采用Huybrechts线性组合算符和变分法，讨论了晶格热振动对极性半导体膜中电子-表面光学(SO)声子强耦合和电子-体纵光学(LO)声子弱耦合体系的影响，得到了极化子自陷能随膜厚和温度变化的规律，对CdF_2半导体膜进行了数值计算，结果表明，CdF_2极性半导体膜中表面光学声子和体纵光学声子对极化子自陷能的贡献分别在薄膜和宽膜情况下起主导作用。并且发现CdF_2半导体膜中的不同支声子与电子相互作用对极化子自陷能的贡献，以及极化子的总自陷能都将随温度的升高而减小，这表明晶格热振动将削弱电子-声子耦合。

Properties and applications of cold supersonic gas jet

By analyzing the formation mechanism of a supersonic gas jet, a set of equations which describe the atomic beam properties were established. The influence of initial temperature, initial pressure, background gas pressure and pumping speed was discussed in detail. A simulation program was developed based on the equations, and the results under different initial conditions were obtained. The results are in good agreement with the experimental data, and suggest that, in order to get much smaller transverse momentum in collision experiments, it is necessary to lower the initial temperature and the initial pressure of the supersonic gas jet, together with increasing the pumping speed. These results are very instructive for construction of a new generation of cold supersonic gas jets.

Effects of ion beam irradiation on adventitious shoot regeneration from in vitro leaf explants of Saintpaulia ionahta

The effects of 960 MeV carbon ion beam and 8 MeV X-ray irradiation on adventitious shoots from in vitro leaf explants of two different Saintpaulia ionahta (Mauve and Indikon) cultivars were studied with regard to tissue increase, shoots differentiation and morphology changes in the shoots. The experimental results showed that the survival fraction of shoot formation for the Mauve and Indikon irradiated with the carbon ion beam at 20 Gy were 0.715 and 0.600, respectively, while those for both the cultivars exposed to the Xray irradiation at the same dose were 1.000. Relative biological effectiveness (RBE) of Mauve with respect to X-ray was about two. Secondly, the percentage of regenerating explants with malformed shoots in all Mauve regenerating explants irradiated with carbon ion beam at 20 Gy accounted for 49.6%, while that irradiated with the same dose of X-ray irradiation was only 4.7%; as for Saintpatdia ionahta Indikon irradiated with 20 Gy carbon ion beam, the percentage was 43.3%, which was higher than that of X-ray irradiation. Last, many chlorophyll deficient and other varieties of mutants were obtained in this study. Based on the results above, it can be concluded that the effect of mutation induction by carbon ion beam irradiation on the leaf explants of Saintpaulia ionahta is better than that by X-ray irradiation; and the optimal mutagenic dose varies from 20 Gy to 25 Gy for carbon ion beam irradiation.

碳化硅中氦离子辐照缺陷演化及SiCOI薄膜合成的研究

碳化硅是一种宽带隙半导体材料,具有禁带宽度大、击穿电压高、热导率高、电子饱和漂移速度大、介电常数小、抗辐射能力强、化学稳定性好等优良特性,使其在越来越多的领域如航空航天、太空探测、人造卫星、地热勘探、核能仪器、雷达通讯等, 所需要高温、高速、高频、大功率的微电子器件方面倍受青睐,并和氮化镓、金刚石一起被誉为发展前景十分广阔的第三代半导体材料。本论文采用He+离子注入,在SiC衬底一定深度引入纳米气泡/空腔的方法,来增强对氧原子的俘获以增加O原子在RP处局域浓度,使得更利于O与Si的反应,从而促进氧化埋层的形成,以达到降低注入O的剂量而形成优良的氧化物电绝缘层的目的。由于高剂量的O注入会引起表层SiC材料的损伤，该方法有望缓解目前SIMOX技术中O离子高剂量注入引起表层材料的损伤问题，以期获得低成本、低缺陷密度的SiCOI材料。论文主要开展了如下研究：（1）对He+离子高温（600 K）注入6H-SiC中产生的辐照缺陷,以及缺陷在阶梯温度退火的演化行为的特征进行了分析。实验采用100 keV的He+,辐照剂量范围为3.0×1015～3.0×1016 He+/cm2。利用拉曼光谱、室温光致发光谱、红外吸收光谱、沟道卢瑟福背散射谱的特征进行了分析。实验结果表明,离子注入所产生晶格损伤的程度与He+离子注入剂量有关；高温退火使得损伤得到恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复。高剂量注入的样品在阶梯温度退火条件下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性。与室温注入相比,高温注入引入的自退火作用使大部分简单缺陷发生复合,限制了损伤的积累,从而在材料中产生相对较小的损伤。在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能。 （2）对He的预注入引入的辐照缺陷与随后注入的氧原子的相互作用机理进行了初步分析。实验采用先He后O注入的方法，采用的离子能量为30 keV (He+)，100 keV (O+)；剂量分别为3.0×1016 (He+)、1.0×1017 (O+) ions/cm2。拉曼散射谱结果表明,空腔对氧的吸收主要是通过捕获简单缺陷释放出来的间隙氧原子实现的,进而促进了对氧的吸附,形成硅氧化合物,有利于氧化埋层的形成。紫外-可见吸收谱中的干涉带表明在材料表面下大概198 nm处是损伤层与晶体层的分界面，接近于SRIM2006估算得到的30 keV He+和100 keV O+辐照损伤的深度（He+辐照损伤的深度为195 nm；O+辐照损伤的深度为165 nm）。沟道卢瑟福背散射谱表明，在特定深度（约150 nm）处,样品中形成了接近非晶的埋层。He离子预注入的碳化硅基体由于含有较多的空位,注入的氧在退火过程中从简单缺陷中释放,向空腔层扩散并捕获在空腔层内,使得He离子预先注入形成的空腔层限制了随后O离子注入造成的损伤层的厚度