Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. © 2013 American Chemical Society.

Tunable Rashba effect in two-dimensional LaOBiS2 films: Ultrathin candidates for spin field effect transistors

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields. © 2013 American Chemical Society.

High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46% and 25% at a wavelength of 1.55 mu m are achieved by simulation and experiment, respectively. An optical 3 dB bandwidth of 45 nm from 1530 nm to 1575 nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10 nm in etch depth is achievable. The measurement results indicate that the alignment error of +/-2 mu m results in less than 1 dB additional coupling loss.

First-principles study of native defects in rutile TiO2

Native point defects in the rutile TiO2 are studied via first-principles pseudopotential calculations. Except for the two antisite defects, all the native point defects have low formation energies. Under the Ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure. (c) 2007 Elsevier B.V. All rights reserved.

A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response

A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料

采用超低压（22mbar）选择区域生长（Selective Area Growth，SAG）金属有机化学汽相沉积（Metal-organic Chemical Vapor Deposition，MOCVD）技术成功制备了高质量InGaAsP／InGaAsP多量子阱（Multiple Quantum Well，MQW）材料．在较小的掩蔽宽度变化范围内（15—30μm），得到了46nm的光荧光（Photoluminescence，PL）波长偏移量，PL半高宽（Full-Width-at-Half-Maximum，FWHM）小于30meV．为了保证选择区域内的MQWs材料的均匀性，我们采用了新型的渐变掩蔽图形，并且运用这种新型渐变掩蔽图形，研究了渐变区域的过渡效应对材料生长的影响．我们还观察到，渐变区域的能量偏调量随着掩蔽图形宽度与渐变区域长度比值的增大而出现饱和现象．

Detection of avian influenza virus subtype H5 using a biosensor based on imaging ellipsometry

A novel method is reported for the detection of avian influenza virus subtype H5 using a biosensor based on high spatial resolution imaging ellipsometry (IE). Monoclonal antibodies specific to H5 hemagglutinin protein were immobilized on silicon wafers and used to capture virus particles. Resultant changes on the surface of the wafers were visualized directly in gray-scale on an imaging ellipsometry image. This preliminary study has shown that the assay is rapid and specific for the identification of avian influenza virus subtype H5. Compared with lateral-flow immunoassays, this biosensor not only has better sensitivity, but can also simultaneously perform multiplexed tests. These results suggest that this biosensor might be a valuable diagnostic toot for avian influenza virus detection. (c) 2009 Elsevier B.V. All rights reserved.

Thermally induced evolution of phase transformations in gas hydrate sediment

Thermally induced evolution of phase transformations is a basic physical-chemical process in the dissociation of gas hydrate in sediment (GHS). Heat transfer leads to the weakening of the bed soil and the simultaneous establishment of a time varying stress field accompanied by seepage of fluids and deformation of the soil. As a consequence, ground failure could occur causing engineering damage or/and environmental disaster. This paper presents a simplified analysis of the thermal process by assuming that thermal conduction can be decoupled from the flow and deformation process. It is further assumed that phase transformations take place instantaneously. Analytical and numerical results are given for several examples of simplified geometry. Experiments using Tetra-hydro-furan hydrate sediments were carried out in our laboratory to check the theory. By comparison, the theoretical, numerical and experimental results on the evolution of dissociation fronts and temperature in the sediment are found to be in good agreement.

长白山次生林演替过程中土壤动物群落的变化

通过对长白山白河局不同林龄的次生林土壤动物的组成进行比较 ,探讨了土壤动物群落随森林采伐更新演替的变化以及演替阶段 (增长期、过渡期和稳定期 ) .研究表明 ,不同类群土壤动物的演变趋势是腐食类群数量相对较多 ,其变化趋势接近植被的变化规律 ,均是经过上升、下降 ,最后达到稳定 ;植食类群演替前期在整个群落中所占比例较高 ,随着演替年代的增加 ,比例呈下降的趋势 ;捕食类群经过 10 0年左右的演替 ,数量明显增加 ;从昆虫类群组成来看 ,林龄较短者 ,未稳定的类群数较多 ,林龄较长者 ,未稳定的类群较少 .

翻耙补播对科尔沁碱化草地土壤理化性质和生物活性的影响

对科尔沁地区碱化草甸草地翻耙补播沙打旺后的土壤理化性质和土壤生物活性的变化进行了研究。结果表明,翻耙补播改良后草地综合生产性能得到明显改善,土壤容重、pH、含盐量和碱化度降低,土壤含水量和孔隙度增加,土壤有机质和N、P、K等养分含量增加;同时,土壤微生物C、N的含量以及土壤酶的活性也得到较大幅度提高。

湖北省近500年区域干湿序列重建及其比较分析

在历史旱涝记载资料可靠性检验的基础上,重建了湖北省3个区域近500年来的干湿气候变化序列,并比较分析了各区域干湿气候变化的趋势特征、准周期性及跃变现象。结果表明:在3个区域中,鄂东区1570~1770、1890~1950年两个时段偏湿,1470~1520、1790~1830年则偏干;鄂北区偏湿时期主要在1470~1530、1710~1750、1850~1910年三个时段,1470~1530、1770~1830年则偏干;鄂西南区有1550~1610、1650~1710、1830~1890、1930~1990