Micropropagacion de dos clones de caña de azucar (Saccharum sp.) ISA 96-110 e ISA 96-111

El presente estudio se realizó con el objetivo de desarrollar metodología para la micropropagación a partir de ápices caulinares, utilizando la técnica Spinder, y posteriormente aclimatación de las vitroplantas de dos clones de caña de azúcar (Saccharum sp.) (ISA 96-110 e ISA 96- 111). Se estudió el efecto que sobre el establecimiento tendrian 4 variantes del medio de cultivo MS (1962), suplidas con 0.0, 0.2 y 0.6 mg/1 de 6-BAP. Se utilizaron 15 réplicas por tratamiento. Se evaluó el efecto que sobre la brotación tuvieron 4 variantes del medio MS (1962), a las que se les adicionó 0.0, 0.1 y 0.5 mg/1 de 6 BAP durante tres subcultivos sucesivos. Se utilizaron 5 réplicas por variante en estudio. Para inducir el mayor enraizamiento se probaron 4 variantes líquidas del medio MS ( 1962), suplidas con 0.0, 1.0 y 1.6 mg/1 de AlA. Para el estudio de aclimatación se emplearon 30 plantas por cultivar y se establecieron en un sustrato de lombrices Californiana (Eisenia foetida). El clon ISA 96-110 presentó mayor porcentaje de fenolización y menor curvatura que el clon ISA 96-111. El medio de cultivo MS + 0.60 m g/1 de 6-BAP indujo al menor porcentaje de fenolización (33.0) y mayor de curvatura (60.0) en el clon ISA 96-110, el medio MS + 0.20 mg/1 de 6- BAP en el clon ISA 96-111. La sobrevivencia de las plantas del clon ISA- 111 fue de 100 % en todos los medios de cultivo, para el ISA 96-11O sólo los medios MS + 0.20 y MS + 0.00 mg/1 de 6-BAP. No hubo aumento de los valores de las variables altura de la planta, número de brotes y de hojas con el aumento del número de subcultivos. El medio de cultivo que indujo mayor brotación para el clon ISA 96-11 O fue el MS + 0.30 mg/1, mientras que para el clon ISA 96-111 fue el MS + 0.1 mg/1 de 6- BAP. El clon ISA 96-111 reportó resultados superiores en longitud (5.75 cm) y número de raices (7.4) por planta. El medio de cultivo MS + 1.3 mg/1 de AlA indujo los mejores resultados en ambos clones. El comportamiento de las plantas del clon ISA 96-1 11 fueron superiores a las del clon ISA 96-11O al momento de la aclimatación

Control of Disease in Aquaculture: Proceedings of the Nineteenth U.S.-Japan Meeting on Aquaculture, Ise, Mie Prefecture, Japan, 29-30 October 1990, Satellite Symposium: 2 November

The United States and Japanese counterpart panels on aquaculture were formed in 1969 under the United States-Japan Cooperative Program in Natural Resources (UJNR). The panels currently include specialists drawn from the federal departments most concerned with aquaculture. Charged with exploring and developing bilateral cooperation, the panels have focused their efforts on exchanging information related to aquaculture which could be of benefit to both countries. The UJNR was begun during the Third Cabinet-Level Meeting of the Joint United States-Japan Committee on Trade and Economic Affairs in January 1964, In addition to aquaculture, current subjects in the program include desalination of seawater, toxic microorganisms, air pollution, energy, forage crops, national park management, mycoplasmosis, wind and seismic effects, protein resources, forestry, and several joint panels and committees in marine resources research, development, and utilization. Accomplishments include increased communication and cooperation among technical specialists; exchanges of information, data, and research findings; annual meetings of the panels, a policy-coordinative body; administrative staff meetings; exchanges of equipment, materials, and samples; several major technical conferences; and beneficial effects on international relations. (PDF file contains 150 pages.)

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.

Functionalization of Si(111) surfaces and the formation of mixed monolayers for the covalent attachment of molecular catalysts in photoelectrochemical devices

The functionalization of silicon surfaces with molecular catalysts for proton reduction is an important part of the development of a solar-powered, water-splitting device for solar fuel formation. The covalent attachment of these catalysts to silicon without damaging the underlying electronic properties of silicon that make it a good photocathode has proven difficult. We report the formation of mixed monolayer-functionalized surfaces that incor- porate both methyl and vinylferrocenyl or vinylbipyridyl (vbpy) moieties. The silicon was functionalized using reaction conditions analogous to those of hydrosilylation, but instead of a H-terminated Si surface, a chlorine-terminated Si precursor surface was used to produce the linked vinyl-modified functional group. The functionalized surfaces were characterized by time-resolved photoconductivity decay, X-ray photoelectron spectroscopy (XPS), electro- chemical, and photoelectrochemical measurements. The functionalized Si surfaces were well passivated, exhibited high surface coverage and few remaining reactive Si atop sites, had a very low surface recombination velocity, and displayed little initial surface oxidation. The surfaces were stable toward atmospheric and electrochemical oxidation. The surface coverage of ferrocene or bipyridine was controllably varied from 0 up to 30% of a monolayer without loss of the underlying electronic properties of the silicon. Interfacial charge transfer to the attached ferrocene group was relatively rapid, and a photovoltage of 0.4 V was generated upon illumination of functionalized n-type silicon surfaces in CH₃CN. The immobilized bipyridine ligands bound transition metal ions, and thus enabled the assembly of metal complexes on the silicon surface. XPS studies demonstrated that [Cp∗Rh(vbpy)Cl]Cl, [Cp∗Ir(vbpy)Cl]Cl, and Ru(acac)₂vbpy were assembled on the surface. For the surface prepared with iridium, x-ray absorption spectroscopy at the Ir L_III edge showed an edge energy and post-edge features virtually identical to a powder sample of [Cp∗Ir(bipy)Cl]Cl (bipy is 2,2 ́-bipyridyl). Electrochemical studies on these surfaces confirmed that the assembled complexes were electrochemically active.

Doses efficaces en glyphosate et en 2,4-D pour le contrôle chimique des laitue d'eau (Pistia stratiotes, Linn.) et toxicité du glyphosate vis-à-vis des tilapias (Sarotherodon melanotheron)

The toxic effects of two herbicides Round up (gliphosate) and 2,4-D (herbazol) were tested on Pistia stratiotes (Linn. Araceae) samples cultivated in glass aquariums. The gliphosate appears to be more toxic on Pistia Stratiotes than 2,4-D. It was then tested on tilapia Sarotherodon melanotheron juveniles. The lethal dose for tilapia (CL50 = 13.25 mg.l -1) is about 18, 37 and 74 times higher than the glyphosate toxic dose for plants at 1, 2 and 4 meters water depth respectively.

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.

Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD

ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.