935 resultados para low dimensional structures
Resumo:
We have theoretically investigated the energy band structures of two typical magnetic superlattices formed by perpendicular or parallel magnetization ferromagnetic stripes periodically deposited on a two-dimensional electron gas (2DEG), where the magnetic profile in the perpendicular magnetization is of inversion anti-symmetry, but of inversion symmetry in parallel magnetization, respectively. We have shown that the energy bands of perpendicular magnetization display the spin-splitting and transverse wave-vector symmetry, while the energy bands of the parallel magnetization exhibit spin degeneration and transverse wave-vector asymmetry. These distinguishing spin-dependent and transverse wave-vector asymmetry features are essential for future spintronics devices applications. (c) 2008 Elsevier B.V. All rights reserved.
Resumo:
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. Such a distinct lateral ordering of QDs is achieved on a planar GaAs(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the QDs. The analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. The ordered dots demonstrate strong photoluminescence (PL) emission at room temperature (RT) and the full width at half maximum of PL peak at RT is only 50 meV. (C) 2007 Elsevier B.V. All rights reserved.
Resumo:
We investigate plasmon excitations in a quantum wire that consists of an infinite one-dimensional array of vertically coupled InAs/GaAs strained quantum dots (QDs). The research is carried out in the framework of random-phase approximation using effective-mass theory. Our formalism is capable of studying plasmons with strong tunneling among QDs, which frustrate the conventionally adopted tight-binding approximation. Based on this formalism, a systematic study on the intraminiband or intrasubband plasmon in vertically coupled InAs/GaAs strained QDs is presented. It is found that an increase of the dot spacing will inevitably reduce the plasmon energy. In contrast, the role of dot height is relatively complex and depends on the dot spacing. The results demonstrate the possibility to engineer collective excitations in low dimensional systems by simply changing their geometric configuration.
Resumo:
Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.
Resumo:
InAs quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. High density of 1.02 x 10(11) cm(-2) of InAs islands on In0.15Ga0.85As and In0.15Al0.85As underlying layer has been achieved. Atomic force microscopy and photoluminescence spectra show the size evolution of InAs islands on In0.15Ga0.85As underlying layer. A strong 1.3 mum photoluminescence from InAs islands on In0.15Ga0.85As underlying layer and with InGaAs strain-reduced layer has been obtained. Single-mirror light emitting diode structures with InAs quantum dots capped by InGaAs grown on InGaAs layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.
Resumo:
We have investigated the photo-excited capacitance-voltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure. The pronounced peak feature at zero bias in the C-V spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined Stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the QW. This fact is further demonstrated through the comparison between the C-V curve with the PL intensity versus applied voltage relationship under the same excitation. The results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.
Resumo:
Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.
Resumo:
The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. (C) 2007 American Institute of Physics.
Resumo:
A method for producing optical structures using rotationally symmetric pyramids is proposed. Two-dimensional structures can be achieved using acute prisms. They form by multi-beam interference of plane waves that impinge from directions distributed symmetrically around the axis of rotational symmetry. Flat-topped pyramids provide an additional beam along the axis thus generating three-dimensional structures. Experimental results are consistent with the results of numerical simulations. The advantages of the method are simplicity of operation, low cost, ease of integration, good stability, and high transmittance. Possible applications are the fabrication of photonic micro-structures such as photonic crystals or array waveguides as well as multi-beam optical tweezers. (c) 2006 Optical Society of America.
Resumo:
Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.
Resumo:
Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.
Resumo:
Cobalt ferrite one-dimensional nanostructures (nanoribbons and nanofibers) were prepared by electrospinning combined with sol-gel technology. The nanoribbons and nanofibers were formed through assembling magnetic nanoparticles with poly(vinyl pyrrolidone) (PVP) as the structure-directing template. Nanoribbons and nanofibers were obtained after calcining the precursor nanoribbons at different temperatures. Successive Ostwald ripening processes occur during the formation of CoFe2O4 nanoribbons and nanofibers. The sizes of nanoparticles varied with calcination temperatures, which leads to different one-dimensional structures and variable magnetic properties. These novel magnetic one-dimensional structures can potentially be used in nanoelectronic devices, magnetic sensors, and flexible magnets.
Resumo:
This paper presents experimental results that aimed to investigate the effects of soil liquefaction on the modal parameters (i.e. frequency and damping ratio) of pile-supported structures. The tests were carried out using the shaking table facility of the Bristol Laboratory for Advanced Dynamics Engineering (BLADE) at the University of Bristol (UK) whereby four pile-supported structures (two single piles and two pile groups) with and without superstructure mass were tested. The experimental investigation aimed to monitor the variation in natural frequency and damping of the four physical models at different degrees of excess pore water pressure generation and in full-liquefaction condition. The experimental results showed that the natural frequency of pile-supported structures may decrease considerably owing to the loss of lateral support offered by the soil to the pile. On the other hand, the damping ratio of structure may increase to values in excess of 20%. These findings have important design consequences: (a) for low-period structures, substantial reduction of spectral acceleration is expected; (b) during and after liquefaction, the response of the system may be dictated by the interactions of multiple loadings, that is, horizontal, axial and overturning moment, which were negligible prior to liquefaction; and (c) with the onset of liquefaction due to increased flexibility of pile-supported structure, larger spectral displacement may be expected, which in turn may enhance Pdelta effects and consequently amplification of overturning moment. Practical implications for pile design are discussed.
Resumo:
The goal of this work is to learn a parsimonious and informative representation for high-dimensional time series. Conceptually, this comprises two distinct yet tightly coupled tasks: learning a low-dimensional manifold and modeling the dynamical process. These two tasks have a complementary relationship as the temporal constraints provide valuable neighborhood information for dimensionality reduction and conversely, the low-dimensional space allows dynamics to be learnt efficiently. Solving these two tasks simultaneously allows important information to be exchanged mutually. If nonlinear models are required to capture the rich complexity of time series, then the learning problem becomes harder as the nonlinearities in both tasks are coupled. The proposed solution approximates the nonlinear manifold and dynamics using piecewise linear models. The interactions among the linear models are captured in a graphical model. By exploiting the model structure, efficient inference and learning algorithms are obtained without oversimplifying the model of the underlying dynamical process. Evaluation of the proposed framework with competing approaches is conducted in three sets of experiments: dimensionality reduction and reconstruction using synthetic time series, video synthesis using a dynamic texture database, and human motion synthesis, classification and tracking on a benchmark data set. In all experiments, the proposed approach provides superior performance.