972 resultados para electro-optic modulation


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A novel integration method for the production of cost-effective optoelectronic printed circuit boards (OE PCBs) is presented. The proposed integration method allows fabrication of OE PCBs with manufacturing processes common to the electronics industry while enabling direct attachment of electronic components onto the board with solder reflow processes as well as board assembly with automated pick-and-place tools. The OE PCB design is based on the use of polymer multimode waveguides, end-fired optical coupling schemes, and simple electro-optic connectors, eliminating the need for additional optical components in the optical layer, such as micro-mirrors and micro-lenses. A proof-of-concept low-cost optical transceiver produced with the proposed integration method is presented. This transceiver is fabricated on a low-cost FR4 substrate, comprises a polymer Y-splitter together with the electronic circuitry of the transmitter and receiver modules and achieves error-free 10-Gb/s bidirectional data transmission. Theoretical studies on the optical coupling efficiencies and alignment tolerances achieved with the employed end-fired coupling schemes are presented while experimental results on the optical transmission characteristics, frequency response, and data transmission performance of the integrated optical links are reported. The demonstrated optoelectronic unit can be used as a front-end optical network unit in short-reach datacommunication links. © 2011-2012 IEEE.

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Electro-optic switching in short-pitch polymer stabilized chiral nematic liquid crystals was studied and the relative contributions of flexoelectric and dielectric coupling were investigated: polymer stabilization was found to effectively suppress unwanted textural transitions of the chiral nematic liquid crystal and thereby enhance the electro-optical performance (high optical contrast for visible light, a near ideal optical hysteresis, fast electro-optic response). Test cells were studied that possessed interdigitated electrodes to electrically address the liquid crystal. Based on simulations, a well-fitted phenomenological description of the electro-optic response was derived considering both flexoelectro-optic and Kerr-effect based electro-optic response. © 2014 AIP Publishing LLC.

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Liquid-crystalline polymers are materials of considerable scientific interest and technological value. An important subset of these materials exhibit rubber-like elasticity, combining the optical properties of liquid crystals with the mechanical properties of rubber. Moreover, they exhibit behaviour not seen in either type of material independently, and many of their properties depend crucially on the particular mesophase employed. Such stretchable liquid-crystalline polymers have previously been demonstrated in the nematic, chiral-nematic, and smectic mesophases. Here, we report the fabrication of a stretchable gel of blue phase I, which forms a self-assembled, three-dimensional photonic crystal that remains electro-optically switchable under a moderate applied voltage, and whose optical properties can be manipulated by an applied strain. We also find that, unlike its undistorted counterpart, a mechanically deformed blue phase exhibits a Pockels electro-optic effect, which sets out new theoretical challenges and possibilities for low-voltage electro-optic devices.

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The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

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Six-period 4 nm GaN/10 nm AlxGa1-xN superlattices with different Al mole fractions x were prepared on (0001) sapphire substrates by low-temperature metal-organic chemical vapor deposition. The linear electro-optic (Pockels) effect was studied by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The measured electro-optic coefficients, gamma(13)=5.60 +/- 0.18 pm/V, gamma(33)=19.24 +/- 1.21 pm/V (for sample 1, x=0.3), and gamma(13)=3.09 +/- 0.48 pm/V, gamma(33)=8.94 +/- 0.36 pm/V (for sample 2, x=0.1), respectively, are about ten times larger than those of GaN bulk material. The enhancement effect in GaN/AlxGa1-xN superlattice can be attributed to the large built-in field at the interfaces, depending on the mole fraction of Al. (C) 2007 American Institute of Physics.

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Novel guest nonlinear optical (NLO) chromophore molecules (4-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were doped in poly (methyl methacrylate) (PMMA) host with a concentration of approximately 15% by weight. For a useful macroscopic electro-optic (EO) effect, these NLO molecules NAEC were arranged in a noncentrosymmetric structure in the host polymer by corona-onset poling at elevated temperature (COPET). For applying NAEC-PMMA polymer in optical devices such as EO switch, its optical properties have been investigated. The UV/Visible absorption spectra for the unpoled and poled polymer film were determined. The refractive index of the film was also determined from measurements of the coupling angles with the reflective intensity at 632.8 nm wavelength. Using the simple reflection technique, the EO coefficient 33 value was measured as 60 pm/V at 632.8 nm wavelength. The second-order nonlinear coefficient d(33) was characterized by the second-harmonic-generation (SHG) experimental setup and the calculated d(33) value reached 18.4 pm/V at 1064 nm wavelength. The relation between the second-order nonlinear coefficients d(33) and d(13) for the poled polymer film was also discussed in detail and the ratio d(33)/d(13) value was obtained as 3.3. (C) 2002 Kluwer Academic Publishers.

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Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

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The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.

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The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

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The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

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Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

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The electro-optic response of a cell consisting of a thin layer of liquid crystal deposited onto gold nanorods embedded in thin film alumina with a transparent top electrode has been investigated. For p-polarized light incident from the liquid crystal side, the extinction peak associated with the nanorod longitudinal plasmon resonance is completely suppressed. The peak could be recovered by applying an external electric field parallel to the long axis of the nanorods. No extinction peak suppression is observed when the light was incident from the nanorod side of the cell. The effect is explained by polarization properties of liquid crystal.

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Department of Polymer Science and Rubber Technology, Cochin University of Science and Technology

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Elastic properties of sodium doped Lithium potassium sulphate, LiK0.9Na0.1SO4, crystal has been studied by ultrasonic Pulse Echo Overlap [PEO] technique and are reported for the first time. The controversy regarding the type of crystal found while growth is performed at 35 °C with equimolar fraction of Li2SO4H2O, K2SO4 and Na2SO4 has been resolved by studying the elastic properties. The importance of this crystal is that it exhibits pyroelectric, ferroelectric and electro optic properties. It is simultaneously ferroelastic and superionic. The elastic properties of LiK0.9Na0.1SO4 crystal are well studied by measuring ultrasonic velocity in the crystal in certain specified crystallographic directions and evaluating the elastic stiffness constants, compliance constants and Poisson’s ratios. The anisotropy in the elastic properties of the crystal are well explained by the pictorial representation of the surface plots of phase velocity, slowness and linear compressibility in a-b and a-c planes.

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Menezesite, ideally Ba2MgZr4(BaNb12O42)center dot 12H(2)O, occurs as a vug mineral in the contact zone between dolomite carbonatite and ""jacupirangite"" (=a pyroxenite) at the Jacupiranga mine, in Cajati county, Sao Paulo state, Brazil, associated with dolomite, calcite, magnetite, clinohumite, phlogopite, ancylite-(Ce), strontianite, pyrite, and tochilinite. This is also the type locality for quintinite-2H. The mineral forms rhombododecahedra up to I mm, isolated or in aggregates. Menezesite is transparent and displays a vitreous luster; it is reddish brown with a white streak. It is non-fluorescent. Mohs hardness is about 4. Calculated density derived from the empirical formula is 4.181 g/cm(3). It is isotropic, 1.93(1) (white light); n(calc) = 2.034. Menezesite exhibits weak anomalous birefringence. The empirical formula is (Ba1.47K0.53Ca0.3,Ce0.17Nd0.10Na0.06La0.02)(Sigma 2.66)(Mg0.94Mn0.23Fe0.23Al0.03)(Sigma 1.43)(Zr2.75Ti0.96Th0.29)(Sigma 4.00)[(Ba0.72Th0.26U0.02)(Sigma 1.00)(Nb9.23Ti2.29Ta0.36Si0.12)Sigma O-12.00(42)]center dot 12H(2)O. The mineral is cubic, space group 10 (204), a = 13.017(1) angstrom, V = 2206(1) angstrom(3), Z = 2. Menezesite is isostructural with the synthetic compound Mg-7[MgW12O42](OH)(4)center dot 8H(2)O. The mineral was named in honor of Luiz Alberto Dias Menezes Filho (born 1950), mining engineer, mineral collector and merchant. Both the description and the name were approved by the CNMMN-IMA (Nomenclature Proposal 2005-023). Menezesite is the first natural heteropolyniobate. Heteropolyanions have been employed in a range of applications that include virus-binding inorganic drugs (including the AIDs virus), homogeneous and heterogeneous catalysts, electro-optic and electrochromic materials, metal and protein binding, and as building blocks for nanostructuring of materials.