998 resultados para WHITE ORGANIC LEDS


Relevância:

30.00% 30.00%

Publicador:

Resumo:

Este PFC es un trabajo muy práctico, los objetivos fueron impuestos por el tutor, como parte del desarrollo de herramientas (software y hardware) que serán utilizados posteriormente a nivel de docencia e investigación. El PFC tiene dos áreas de trabajo, la principal y primera que se expone es la utilización de una herramienta de simulación térmica para caracterizar dispositivos semiconductores con disipador, la segunda es la expansión de una tarjeta de adquisición de datos con unas PCBs diseñadas, que no estaban disponibles comercialmente. Se ha probado y configurado “Autodesk 2013 Inventor Fusion” y “Autodesk 2013 Simulation and Multiphysics” para simulación térmica de dispositivos de alta potencia. Estas aplicaciones son respectivamente de diseño mecánico y simulación térmica, y la UPM dispone actualmente de licencia. En esta parte del proyecto se realizará un manual de utilización, para que se continúe con esta línea de trabajo en otros PFC. Además se han diseñado mecánicamente y simulado térmicamente diodos LED de alta potencia luminosa (High Brightness Lights Emitting Diodes, HB-LEDs), tanto blancos como del ultravioleta cercano (UVA). Las simulaciones térmicas son de varios tipos de LEDs que actualmente se están empleando y caracterizando térmicamente en Proyectos Fin de Carrera y una Tesis doctoral. En la segunda parte del PFC se diseñan y realizan unas placas de circuito impreso (PCB) cuya función es formar parte de sistemas de instrumentación de adquisición automática de datos basados en LabVIEW. Con esta instrumentación se pueden realizar ensayos de fiabilidad y de otro tipo a dispositivos y sistemas electrónicos. ABSTRACT. The PFC is a very practical work, the objectives were set by the tutor, as part of the development of tools (software and hardware) that will be used later at level of teaching and research. The PFC has two parts, the first one explains the use of a software tool about thermal simulation to characterize devices semiconductors with heatsink, and second one is the expansion of card data acquisition with a PCBs designed, which were not available commercially. It has been tested and configured "Autodesk 2013 Inventor Fusion" and "Autodesk 2013 Simulation Multiphysics” for thermal simulation of high power devices. These applications are respectively of mechanical design and thermal simulation, and the UPM has at present license. In this part of the project a manual of use will be realized, so that it is continued by this line of work in other PFC. Also they have been designed mechanically and simulated thermally LEDs light (High Brightness Lights Emitting Diodes , HB- LEDs) both white and ultraviolet. Thermal simulations are several types of LEDs are now being used in thermally characterizing in Thesis and PhD. In the second part of the PFC there are designed and realized circuit board (PCB) whose function is to be a part of instrumentation systems of automatic acquisition based on LabVIEW data. With this instrumentation can perform reliability testing and other electronic devices and systems.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Data on distribution of organic carbon and phenols near the top of Kandalaksha Gulf, one of the largest gulfs of the White Sea, are presented. Investigations carried out the port city of Kandalasksha indicate that bottom sediments of the area adjoining the port contain synthetic phenols and have elevated concentrations of organic carbon. But in general sediments of this part of the gulf have near-normal concentration and composition of both phenols and organic carbon. This indicates that ecological situation in this area remains near-optimal.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Polycyclic aromatic hydrocarbons (PAHs) are common environmental contaminants which can be derived from anthropogenic sources, such as combustion and discharges from extraction and transport, and natural processes, including leakage and erosion of fossil carbon. Natural PAH sources contribute, along with biological activities and terrestrial run-off, to the organic carbon content in sediments.The Barents Sea region is far from many anthropogenic sources of PAH, but production and trans-shipment of hydrocarbons is increasing. We present data for polycyclic aromatic hydrocarbon (PAH) concentrations in bottom sediments from 510 stations in the Barents and White Seas, and along the northern coast of Norway.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

A multidisciplinary oceanographic survey of the White Sea was carried out in the Gorlo Straight, Basin, and Kandalaksha Bay regions including estuaries of Niva, Kolvitza and Knyazhaya rivers. Hydrophysical study in the northern part of the Basin revealed long-lived step-like structures and inversions in vertical profiles of temperature and salinity, which formed due to tidal mixing of saline and cold Barents Sea waters and warmer White Sea waters in the Gorlo Straight. Biological studies revealed the main features of spatial distribution, as well as qualitative and quantitative composition of phyto- and zooplankton in all studied areas; tolerance of main zooplankton species to fresh water influence in estuaries was shown. Study of suspended matter in estuaries clearly demonstrated physicochemical transformations of material supplied by the rivers. Data on vertical particle flux in the deep part of the Kandalaksha Bay showed difference between the upper and near-bottom layers, which could result from sinking of spring phytoplankton bloom products and supply of terrigenic suspended matter from the nepheloid layer formed by tidal currents.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

It has long been known that extreme changes in North African hydroclimate occurred during the late Pleistocene yet many discrepancies exist between sites regarding the timing, duration and abruptness of events such as Heinrich Stadial (HS) 1 and the African Humid Period (AHP). The hydroclimate history of the Nile River is of particular interest due to its lengthy human occupation history yet there are presently few continuous archives from the Nile River corridor, and pre-Holocene studies are rare. Here we present new organic and inorganic geochemical records of Nile Basin hydroclimate from an eastern Mediterranean (EM) Sea sediment core spanning the past 28 ka BP. Our multi-proxy records reflect the fluctuating inputs of Blue Nile versus White Nile material to the EM Sea in response to gradual changes in local insolation and also capture abrupt hydroclimate events driven by remote climate forcings, such as HS1. We find strong evidence for extreme aridity within the Nile Basin evolving in two distinct phases during HS1, from 17.5 to 16 ka BP and from 16 to 14.5 ka BP, whereas peak wet conditions during the AHP are observed from 9 to 7 ka BP. We find that zonal movements of the Congo Air Boundary (CAB), and associated shifts in the dominant moisture source (Atlantic versus Indian Ocean moisture) to the Nile Basin, likely contributed to abrupt hydroclimate variability in northern East Africa during HS1 and the AHP as well as to non-linear behavior of hydroclimate proxies. We note that different proxies show variable gradual and abrupt responses to individual hydroclimate events, and thus might have different inherent sensitivities, which may be a factor contributing to the controversy surrounding the abruptness of past events such as the AHP. During the Late Pleistocene the Nile Basin experienced extreme hydroclimate fluctuations, which presumably impacted Paleolithic cultures residing along the Nile corridor.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Mode of access: Internet.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

The high gains in performance predicted for optical immersion are difficult to achieve in practice due to total internal reflection at the lens/detector interface. By reducing the air gap at this interface optical tunneling becomes possible and the predicted gains can be realized in practical devices. Using this technique we have demonstrated large performance gains by optically immersing mid-infrared heterostructure InA1Sb LEDs and photodiodes using hypershperical germanium lenses. The development of an effective method of optical immersion that gives excellent optical coupling has produced a photodiode with a peak room temperature detectivity (D*) of 5.3 x 109 cmHz½W-1 at λpeak=5.4μm and a 40° field of view. A hyperspherically immersed LED showed a f-fold improvement in the external efficiency, and a 3-fold improvement in the directionality compared with a conventional planar LED for f/2 optical systems. The incorporation of these uncooled devices in a White cell produced a NO2 gas sensing system with 2 part-per-million sensitivity, with an LED drive current of <5mA. These results represent a significant advance in the use of solid state devices for portable gas sensing systems.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

The recent advancement in the growth technology of InGaN/GaN has decently positioned InGaN based white LEDs to leap into the area of general or daily lighting. Monolithic white LEDs with multiple QWs were previously demonstrated by Damilano et al. [1] in 2001. However, there are several challenges yet to be overcome for InGaN based monolithic white LEDs to establish themselves as an alternative to other day-to-day lighting sources [2,3]. Alongside the key characteristics of luminous efficacy and EQE, colour rendering index (CRI) and correlated colour temperature (CCT) are important characteristics for these structures [2,4]. Investigated monolithic white structures were similar to that described in [5] and contained blue and green InGaN multiple QWs without short-period superlattice between them and emitting at 440 nm and 530 nm, respectively. The electroluminescence (EL) measurements were done in the CW and pulse current modes. An integration sphere (Labsphere “CDS 600” spectrometer) and a pulse generator (Agilent 8114A) were used to perform the measurements. The CCT and Green/Blue radiant flux ratio were investigated at extended operation currents from 100mA to 2A using current pulses from 100ns to 100μs with a duty cycle varying from 1% to 95%. The strong dependence of the CCT on the duty cycle value, with the CCT value decreasing by more than three times at high duty cycle values (shown at the 300 mA pulse operation current) was demonstrated (Fig. 1). The pulse width variation seems to have a negligible effect on the CCT (Fig. 1). To account for the joule heating, a duty cycle more than 1% was considered as an overheated mode. For the 1% duty cycle it was demonstrated that the CCT was tuneable in three times by modulating input current and pulse width (Fig. 2). It has also been demonstrated that there is a possibility of keeping luminous flux independent of pulse width variation for a constant value of current pulse (Fig. 3).

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Coral reefs are in decline worldwide and coral disease is a significant contributing factor. However, etiologies of coral diseases are still not well understood. In contrast with the Caribbean, extremely little is known about coral diseases in the Philippines. In 2005, off Southeast Negros Island, Philippines, I investigated relationships between environmental parameters and prevalence of the two most common coral diseases, ulcerative white spot (UWS) and massive Porites growth anomalies (MPGAs). Samples were collected along a disease prevalence gradient 40.5 km long. Principal component analyses showed prevalence of MPGAs was positively correlated with water column nitrogen, organic carbon of surface sediments, and colony density. UWS was positively correlated with water column phosphorus. This is the first quantitative evidence linking anthropogenically-impacted water and sediment to a higher prevalence of these diseases. Histological and cytological alterations were investigated by comparing tissues from two distinct types of MPGA lesions (types 1 and 2) and healthy coral using light and electron microscopy. Skeletal abnormalities and sloughing, swelling, thinning, and loss of tissues in MPGAs resembled tissues exposed to bacterial or fungal toxins. Both lesion types had decreases in symbiotic zooxanthellae, which supply nutrients to corals. Notable alterations included migrations of chromophore cells (amoebocytes) (1) nocturnally to outer epithelia to perform wound-healing, including plugging gaps and secreting melanin in degraded tissues, and (2) diurnally to the interior of the tissue possibly to prevent shading zooxanthellae in order to maximize photosynthate production. Depletion of melanin (active in wound healing) in type 2 lesions suggested type 2 tissues were overtaxed and less stable. MPGAs contained an abundance of endolithic fungi and virus-like particles, which may result from higher nutrient levels and play roles in disease development. Swollen cells and mucus frequently blocked gastrovascular canals (GVCs) in MPGAs. Type 1 lesions appeared to compensate for impeded flow of wastes and nutrients through these canals with proliferation of new GVCs, which were responsible for the observed thickened tissues. In contrast, type 2 tissues were thin and more degraded. Dysplasia and putative neoplasia were also observed in MPGAs which may result from the tissue regeneration capacity being overwhelmed.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Coral reefs are in decline worldwide and coral disease is a significant contributing factor. However, etiologies of coral diseases are still not well understood. In contrast with the Caribbean, extremely little is known about coral diseases in the Philippines. In 2005, off Southeast Negros Island, Philippines, I investigated relationships between environmental parameters and prevalence of the two most common coral diseases, ulcerative white spot (UWS) and massive Porites growth anomalies (MPGAs). Samples were collected along a disease prevalence gradient 40.5 km long. Principal component analyses showed prevalence of MPGAs was positively correlated with water column nitrogen, organic carbon of surface sediments, and colony density. UWS was positively correlated with water column phosphorus. This is the first quantitative evidence linking anthropogenically-impacted water and sediment to a higher prevalence of these diseases. Histological and cytological alterations were investigated by comparing tissues from two distinct types of MPGA lesions (types 1 and 2) and healthy coral using light and electron microscopy. Skeletal abnormalities and sloughing, swelling, thinning, and loss of tissues in MPGAs resembled tissues exposed to bacterial or fungal toxins. Both lesion types had decreases in symbiotic zooxanthellae, which supply nutrients to corals. Notable alterations included migrations of chromophore cells (amoebocytes) (1) nocturnally to outer epithelia to perform wound-healing, including plugging gaps and secreting melanin in degraded tissues, and (2) diurnally to the interior of the tissue possibly to prevent shading zooxanthellae in order to maximize photosynthate production. Depletion of melanin (active in wound healing) in type 2 lesions suggested type 2 tissues were overtaxed and less stable. MPGAs contained an abundance of endolithic fungi and virus-like particles, which may result from higher nutrient levels and play roles in disease development. Swollen cells and mucus frequently blocked gastrovascular canals (GVCs) in MPGAs. Type 1 lesions appeared to compensate for impeded flow of wastes and nutrients through these canals with proliferation of new GVCs, which were responsible for the observed thickened tissues. In contrast, type 2 tissues were thin and more degraded. Dysplasia and putative neoplasia were also observed in MPGAs which may result from the tissue regeneration capacity being overwhelmed.