集胞藻PCC6803光激活异养生长必需基因s110886的研究

集胞藻PCC6803能够在微弱、短时光刺激的条件下利用葡萄糖进行异养生长,称为光激活异养生长(LAHG)。从其随机插入诱变文库中,筛选到3个不能进行光激活异养生长的突变株,通过反向PCR和测序确定突变基因全部为s110886。将s110886克隆到表达载体pET21-b,在大肠杆菌BL21(DE3)诱导表达,并对产物进行了纯化。用Western印迹法研究s110886在集胞藻PCC6803的表达情况,发现在完全黑暗和光照情况下,其表达水平几乎没有差异,并证明其编码产物分布于膜上。因此,s110886是一个

Experimental demonstration of optical data links using a hybrid CAP/QAM modulation scheme.

The first known experimental demonstrations of a 10 Gb/s hybrid CAP-2/QAM-2 and a 20 Gb/s hybrid CAP-4/QAM-4 transmitter/receiver-based optical data link are performed. Successful transmission over 4.3 km of standard single-mode fiber (SMF) is achieved, with a link power penalty ∼0.4 dBo for CAP-2/QAM-2 and ∼1.5 dBo for CAP-4/QAM-4 at BER=10(-9).

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Tuning of detection wavelength in a resonant-cavity-enhanced quantum-dot-embedded photodiode by changing detection angle

We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058 mu m with a full width at half maximum (FWHM) of 5 nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0 degrees to 60 degrees, the peak-current wavelength shifts towards the short wavelength side by 37 nm, while the quantum efficiency remains larger than 15%.

Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers

Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.

Quantum-confined stark effect of vertically stacked self-assembled quantum discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

A 12-bit 300 MHz CMOS DAC for high-speed system applications

This paper describes a 12-bit 300 MHz CMOS DAC for high-speed system applications. The proposed DAC consists of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs. In order to ensure the linearity of DAC, a double Centro symmetric current matrix is designed by using the Q(2) random walk strategy. To minimize the feedthrough and improve the dynamic performance, the drain of the switching transistors is isolated from the output lines by adding two cascoded transistors.

Dynamics of Multi-Stage Bladed Disks Systems

This paper presents a new and original method for dynamical analysis of multistage cyclic structures such as turbomachinery compressors or turbines. Each stage is modeled cyclically by its elementary sector and the interstage coupling is achieved through a cyclic recombination of the interface degrees of freedom. This method is quite simple to set up; it allows us to handle the finite element models of each stage's sector directly and, as in classical cyclic symmetry analysis, to study the nodal diameter problems separately. The method is first validated on a simple case study which shows good agreements with a complete 360 deg reference calculation. An industrial example involving two HP compressor stages is then presented. Then the forced response application is presented in which synchronous engine order type excitations are considered.

组合测试:原理与方法

组合测试能够在保证错误检出率的前提下采用较少的测试用例测试系统.但是,组合测试用例集的构造问题的复杂度是NP完全的.组合测试方法的有效性和复杂性吸引了组合数学领域和软件工程领域的学者们对其进行深入的研究.总结了近年来在组合测试方面的研究进展,主要内容包括:组合测试准则的研究、组合测试生成问题与其他NP完全问题的联系、组合测试用例的数学构造方法、采用计算机搜索的组合测试生成方法以及基于组合测试的错误定位技术.