991 resultados para SiC hetrostructures
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Numérisation partielle de reliure
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Numérisation partielle de reliure
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This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.
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Référence bibliographique : Weigert, 170
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Référence bibliographique : Weigert, 600
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Référence bibliographique : Weigert, 640