On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
05/11/2013
|
| Resumo |
This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
Elsevier B.V. |
| Direitos |
(c) Elsevier B.V., 1993 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Semiconductors amorfs #Optoelectrònica #Espectroscòpia #Silici #Semimetalls #Amorphous semiconductors #Optoelectronics #Spectrum analysis #Silicon #Semimetals |
| Tipo |
info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion |
