半导体激光器热弛豫时间测试技术研究

利用脉冲工作状态下半导体激光器激射光谱随结温升高发生红移的原理，用Boxcar扫描在一定波长下的半导体激光器光功率随脉冲时间的变化信号，测得其时间分辨光谱；根据对应的峰值光功率出现时刻随波长变化的曲线，计算得到热弛豫时间参量值．利用此方法对一种半导体激光器进行了测试，得到其热弛豫时间为1．2ms．

体布拉格光栅外腔半导体激光器光谱特性研究

用体布拉格光栅(VBG)作为反馈元件与瓦级半导体激光器(LD)以及快轴准直柱透镜构成一个可以将半导体激光器的工作波长稳定在体布拉格光栅布拉格波长处的外腔激光器。测量了体布拉格光栅外腔激光器的波长稳定性与其工作电流、热汇温度、激光束准直装置等因素的关系。分析了波长稳定效果与半导体激光器增益谱特性、外腔结构参量等因素的关系。研究表明,在相同的工作电流、热汇温度下,当准直柱透镜直径为0.4 mm时的波长稳定效果较好;在此情况下,当热汇温度控制在30 ℃,工作电流从0.5 A增加到1.5 A的测量范围内,以及当工

用于大范围高精度实时位移测量的半导体激光干涉仪

现有的半导体激光干涉仪存在测量精度与测量范围的矛盾。本文提出一种新的实时位移测量半导体激光干涉仪，并分析了干涉仪的测量原理。首先提出一种新的解相算法，它通过两路实时相位探测电路从干涉信号中得到待测量相位，消除了光强波动、初始光程差、电路放大倍数、调制深度、Bessel函数等参数对测量精度的影响，提高了测量精度。其次，提出一种扩大测量范围的技术，并用解包裹电路得到真实相位和待测量的位移, 将测量范围从半个波长提高到几个波长。在实验中，测得喇叭的峰峰值为2361.7nm，重复测量精度为2.56nm，测量时间为

实时测量表面形貌的正弦相位调制半导体干涉仪

提出一种实时测量表面形貌的正弦相位调制半导体激光干涉仪。利用实时相位检测电路，从正弦相位调制干涉信号中解出被测量物体表面形貌的相位。在实验中，测量了楔形光学平板的表面形貌，对表面形貌上的60

位相锁定来自同一侧面抽运Nd：YAG板条的两束激光

实验研究了腔内位相锁定来至一LAD侧面抽运的Nd：YAG板条的两束激光，输出镜面出现干涉条纹，获得1.13W的相干光，其组束效率达到64.9%，相干度约60%。实验中发现只需要一根作为滤波的金属丝放在离输出镜合适的位置都就能有效稳定干涉条纹，金属丝引起的损耗低于8%。

采用国产双包层光纤的声光调Q激光器

实验报道采用我国自行设计的大模场掺镱双包层光纤，利用简单声光调Q装置，成功实现调Q运转；在1－50kHz调制频率下获得了百纳秒的调Q脉冲，其输出光束质量因子大约为2。当重复频率为1kHz时，获得了脉冲宽度为132ns，能量0.93mJ。同时实验中观察到的调Q脉冲常出现一点锁模现象，针对这一现象进行了讨论。

Comparison of Yb-doped fiber laser with one-end and double-end pumping configuration

A high-power Ytterbium-doped fiber laser (YDFL) with homemade double clad fiber (DCF) is introduced in this paper. The output power characteristics of a linear cavity fiber laser have been studied theoretically by solving the rate equations and experimentally tested with single- and double-end-pumping configurations. When both ends of the fiber are pumped by two high-power laser diodes with a launched power of similar to 300 W each, a maximum CW output of 444 W is obtained with a slope efficiency of similar to 75%. (c) 2006 Elsevier Ltd. All rights reserved.

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

Ultrashort pulse generation in diode laser devices

The generation of ultrashort optical pulses by semiconductor lasers has been extensively studied for many years. A number of methods, including gain-/Q-switching and different types of mode locking, have been exploited for the generation of picosecond and sub-picosecond pulses [1]. However, the shortest pulses produced by diode lasers are still much longer and weaker than those that are generated by advanced mode-locked solid-state laser systems [2]. On the other hand, an interesting class of devices based on superradiant emission from multiple contact diode laser structures has also been recently reported [3]. Superradiance (SR) is a transient quantum optics phenomenon based on the cooperative radiative recombination of a large number of oscillators, including atoms, molecules, e-h pairs, etc. SR in semiconductors can be used for the study of fundamental properties of e-h ensembles such as photon-mediated pairing, non-equilibrium e-h condensation, BSC-like coherent states and related phenomena. Due to the intrinsic parameters of semiconductor media, SR emission typically results in the generation of a high-power optical pulse or pulse train, where the pulse duration can be much less than 1 ps, under optimised bias conditions. Advantages of this technique over mode locking in semiconductor laser structures include potentially shorter pulsewidths and much larger peak powers. Moreover, the pulse repetition rate of mode-locked pulses is fixed by the cavity round trip time, whereas the repetition rate of SR pulses is controlled by the current bias and can be varied over a wide range. © 2012 IEEE.

Characterization of parasitics from scattering parameters of laser diode

A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical-domain measurement techniques. 2007 Wiley Periodicals, Inc.

Optical bistability in InP/GaInAsP equilateral-triangle-resonator microlasers

Optical bistability is reported in InP/GaInAsP equilateral-triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America

Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70 degrees C using BCl3/Cl-2 chemistries. A high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

Whispering-gallery-likel modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.