RF-MBE生长AlGaN/GaN极化感应二维电子气材料

用射频等离子体辅助分子束外延技术(RF-MBE)在C面蓝宝石衬底上外延了高质量的GaN膜以及AlGaN/GaN极化感应二维电子气材料。所外延的GaN膜室温背景电子浓度为2×10~(17)cm~(-3)，相应的电子迁移率为177cm~2/(V·s);GaN(0002)X射线衍射摇摆曲线半高宽(FWHM)为6'；AlGaN/GaN极化感应二维电子气材料的室温电子迁移率为730cm~2(V·s)，相应的电子气面密度为7.6×10~(12)cm~(-2)；用此二维电子气材料制作的异质结场效应晶体管(HFET)室温跨导达50mS/mm(栅长1μm)，截止频率达13GHz(栅长0.5μm)。

Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

RF system design and measurement of HIRFL-CSRe

An RF system for the CSRe (cooling storage experimental ring) is designed and manufactured domestically. The present paper mainly describes the RF system design in five main sections: ferrite ring, RF cavity, RF generator, low level system and cavity cooling. The cavity is based on a type of coaxial resonator which is shorted at the end with one gap and loaded with domestic ferrite rings. The RF generator is designed in the push-pull mode and the low level control system is based on a DSP+FGPA+DDS+USB inter...

分立元件的RF宽带放大电路研制

介绍一种由新研制的由分立元件组成的快放大器。该电路是一个交流耦合放大器,具有较高的电源增益(Av≥500),快的上升延(tr≤1.7ns),低噪声(等效到输入端噪声vn≤3μs),该放大器主要用于我所束流诊断系统中放大来自相位探针的微弱信号。

同步加速器高频系统前端控制器改进设计；Improvement Design of RF Front-end Controller for Synchrotron RF System

介绍了在CSR同步加速器高频控制系统改进项目中,高频前端控制器的改进设计。根据系统改进的具体要求,采用DSP+FPGA双电路板的体系结构,对高频前端控制器各个部分做了详细的设计,并给出了具体的资源消耗结果和设计图。

Study of a magnetic alloy-loaded RF cavity for bunch compression at the CSR

The Heavy Ion Research Facility and Cooling Storage Ring (HIRFL-CSR) accelerator in Lanzhou offers a unique possibility for the generation of high density and short pulse heavy ion beams by non-adiabatic bunch compression longitudinally, which is implemented by a fast jump of the RF-voltage amplitude. For this purpose, an RF cavity with high electric field gradient loaded with Magnetic Alloy cores has been developed. The results show that the resonant frequency range of the single-gap RF cavity is from 1.13 MHz to 1.42 MHz, and a maximum RF voltage of 40 kV with a total length of 100 cm can be obtained, which can be used to compress heavy ion beams of U-238(72+) with 250 MeV/u from the initial bunch length of 200 ns to 50 ns with the coaction of the two single-gap RF cavity mentioned above.

Developing wireless measurement system for building deployed capacitive sensors with optimized RF front end circuit

In this paper, a prototype of miniaturized, low power, bi-directional wireless sensor node for wireless sensor networks (WSN) was designed for doors and windows building monitoring. The capacitive pressure sensors have been developed particularly for such application, where packaging size and minimization of the power requirements of the sensors are the major drivers. The capacitive pressure sensors have been fabricated using a 2.4 mum thick strain compensated heavily boron doped SiGeB diaphragm is presented. In order to integrate the sensors with the wireless module, the sensor dice was wire bonded onto TO package using chip on board (COB) technology. The telemetric link and its capabilities to send information for longer range have been significantly improved using a new design and optimization process. The simulation tool employed for this work was the Designerreg tool from Ansoft Corporation.

A study of the RF characteristics for wireless sensor deployment in building environment

In this paper, The radio Frequency (RF) Monitoring and Measurement of the Environmental Research Institute (ERI) located in Cork city will be monitored and analyzed in both the Zigbee (2.44 GHz) and the industrial, scientific and medical (ISM 433 MHz). The main objective of this survey is to confirm what the noise and interferences threat signals exist in these bands. It was agreed that the surveys would be carried out in 5 different rooms and areas that are candidates for the Wireless Sensors deployments. Based on the carried on study, A Zigbee standard Wireless Sensor Network (WSN) will be developed employing a number of motes for sensing number of signals like temperature, light and humidity beside the RSSI and battery voltage monitoring. Such system will be used later on to control and improve indoor building climate at reduced costs, remove the need for cabling and both installation and operational costs are significantly reduced.

A simulation-based design method to transfer surface mount RF system to flip-chip die implementation

The flip-chip technology is a high chip density solution to meet the demand for very large scale integration design. For wireless sensor node or some similar RF applications, due to the growing requirements for the wearable and implantable implementations, flip-chip appears to be a leading technology to realize the integration and miniaturization. In this paper, flip-chip is considered as part of the whole system to affect the RF performance. A simulation based design is presented to transfer the surface mount PCB board to the flip-chip die package for the RF applications. Models are built by Q3D Extractor to extract the equivalent circuit based on the parasitic parameters of the interconnections, for both bare die and wire-bonding technologies. All the parameters and the PCB layout and stack-up are then modeled in the essential parts' design of the flip-chip RF circuit. By implementing simulation and optimization, a flip-chip package is re-designed by the parameters given by simulation sweep. Experimental results fit the simulation well for the comparison between pre-optimization and post-optimization of the bare die package's return loss performance. This design method could generally be used to transfer any surface mount PCB to flip-chip package for the RF systems or to predict the RF specifications of a RF system using the flip-chip technology.

Phase-resolved emission spectroscopy of a hydrogen rf discharge for the determination of quenching coefficients

Collisional effects can have strong influences on the population densities of excited states in gas discharges at elevated pressure. The knowledge of the pertinent collisional coefficient describing the depopulation of a specific level (quenching coefficient) is, therefore, important for plasma diagnostics and simulations. Phase resolved optical emission spectroscopy (PROES) applied to a capacitively coupled rf discharge excited with a frequency of 13.56 MHz in hydrogen allows the measurement of quenching coefficients for emitting states of various species, particularly of noble gases, with molecular hydrogen as a collision partner. Quenching coefficients can be determined subsequent to electron-impact excitation during the short field reversal phase within the sheath region from the time behavior of the fluorescence. The PROES technique based on electron-impact excitation is not limited â?? in contrast to laser techniques â?? by optical selection rules and the energy gap between the ground state and the upper level of the observed transition. Measurements of quenching coefficients and natural fluorescence lifetimes are presented for several helium (3 1S,4 1S,3 3S,3 3P,4 3S), neon (2p1 ,2p2 ,2p4 ,2p6), argon (3d2 ,3d4 ,3d18 and 3d3), and krypton (2p1 ,2p5) states as well as for some states of the triplet system of molecular hydrogen.

Spectroscopic measurements of phase-resolved electron energy distribution functions in RF-excited discharges

The reliable measurement of the electron energy distribution function (EEDF) of plasmas is one of the most important subjects of plasma diagnostics, because this piece of information is the key to understand basic discharge mechanisms. Specific problems arise in the case of RF-excited plasmas, since the properties of electrons are subject to changes on a nanosecond time scale and show pronounced spatial anisotropy. We report on a novel spectroscopic method for phase- and space-resolved measurements of the electron energy distribution function of energetic (> 12 eV) electrons in RF discharges. These electrons dominate excitation and ionization processes and are therefore of particular interest. The technique is based on time-dependent measurements during the RF cycle of excited-state populations of rare gases admixed in small fractions. These measurements yield � in combination with an analytical model � detailed information on the excitation processes. Phase-resolved optical emission spectroscopy allows us to overcome the difficulties connected with the very low densities (107�109 cm�3) and the transient character of the electrons in the sheath region. The EEDF of electrons accelerated in the sheath region can be described by a shifted Maxwellian with a drift velocity component in direction of the electric field. The method yields the high-energy tail of the EEDF on an absolute scale. The applicability of the method is demonstrated at a capacitively coupled RF discharge in hydrogen.

Time dependence of rotational state populations of excited hydrogen molecules in an RF excited plasma reactor

We report on time-dependent population distributions of excited rotational states of hydrogen in a capacitively coupled RF discharge. The common model to obtain the gas temperature from the rotational distribution is not applicable at all times during the discharge cycle due to the time dependence of the EEDF. The apparent temperature within a cycle assumes values between 350 K and 450 K for the discharge parameters of this experiment. We discuss the optimum time window within the discharge cycle that yields the best approximation to the actual temperature. Erroneous results can be obtained, in principle, with time-integrated measurements; we find, however, that in the present case the systematic error amounts to only approximately 20 K. This is due to the fact that the dominant contribution to the average intensity arises during that time window for which the assumptions underlying the analysis are best fulfilled. A similar analysis can be performed for N+2 rotational bands with a small amount of nitrogen added to the discharge gas. These populations do not exhibit the time variations found in the case of H2.

Comparative analysis of nanoscale MOS device architectures for RF applications

This paper provides valuable design insights for optimizing device parameters for nanoscale planar and vertical SOI MOSFETs. The suitability of nanoscale non-planar FinFETs and classical planar single and double gate SOI MOSFETs for rf applications is examined via extensive 3D device simulations and detailed interpretation. The origin of higher parasitic capacitance in FinFETs, compared to planar MOSFETs is examined. RF figures of merit for planar and vertical MOS devices are compared, based on layout-area calculations.