Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Capacitance-voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1-xTex epilayers in the range of Te composition being studied in this work. (C) 1997 American Institute of Physics. [S0021-8979(97)08421-1].

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

Mass resolved MPI spectra of methyl iodide in the 430-490 nm region

The mass resolved multiphoton ionization (MPI) spectra of methyl iodide were obtained in the 430-490 nm region using a time-of-flight (TOF) mass spectrometer. They have the same vibrational structure, which testifies that the fragment species, in the wavelength region under study, are from the photodissociation of multiphoton ionized molecular parent ions. Some features in the spectra are identified as three-photon excitations to 6p and 7s Rydberg states of methyl iodide. Two new vibrational structures of some Rydberg states are observed. The mechanism of ionization and dissociation is also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

Blue electroluminescent polymers with dopant-host systems and molecular dispersion features: polyfluorene as the deep blue host and 1,8-naphthalimide derivative units as the light blue dopants

We developed a series of highly efficient blue electroluminescent polymers with dopant-host systems and molecular dispersion features by selecting 1,8-naphthalimide derivatives as the light blue emissive dopant units, choosing polyfluorene as the deep blue emissive polymer host and covalently attaching the dopant units to the side chain of the polymer host. The polymers' EL spectra exhibited both deep blue emission from the polymer host and light blue emission from the dopant units because of the energy transfer and charge trapping from the polymer host to the dopant units.

Highly efficient red electroluminescent polymers with dopant/host system and molecular dispersion feature: polyfluorene as the host and 2,1,3-benzothiadiazole derivatives as the red dopant

By selecting polyfluorene as the polymer host, choosing 2,1,3-benzothiadiazole derivative moieties as the red dopant units and covalently attaching 0.3 mol% of the dopant units to the side chain of the polymer host, we developed a novel series of red electroluminescent polymers of dopant/host system with molecular dispersion feature. Their EL spectra exhibited predominant red emission from the dopant units because of the energy transfer and charge trapping from the polymer backbone to the dopant units. The emission wavelength of the polymers could be tuned by modifying the chemical structures of the dopant units.

Bimolecular quadruplexes and their transitions to higher-order molecular structures detected by ESI-FTICR-MS

Four individual quadruplexes, which are self-assembled in ammonium acetate solution from telomeric sequences of closely related DNA strands - d(G(4)T(4)G(4)), d(G(3)T(4)G(4)), d(G(3)T(4)G(3)), and d(G(4)T(4)G(3)) - have been detected in the gas phase using electrospray ionization Fourier transform ion cyclotron resonance mass spectrometry (ESI-FTICR-MS). The bimolecular quadruplexes associate with the same number of NH4+ in the gas phase as NMR shows that they do in solution. The quadruplex structures formed in solution are maintained in the gas phase. Furthermore, the mass spectra show that the bimolecular quadruplexes generated by the strands d(G(3)T(4)G(3)) and d(G(4)T(4)G(3)) are unstable, being converted into trimolecular and tetramolecular structures with increasing concentrations of NH4+ in the solution. Circular dichroism (CD) spectra reveal structural changes during the process of strand stoichiometric transitions, in which the relative orientation of strands in the quadruplexes changes from an antiparallel to a parallel arrangement. Such changes were observed for the strand d(G(4)T(4)G(3)), but not for the strand d(G(3)T(4)G(3)). The present work provides a significant insight into the formation of various DNA quadruplexes, especially the higher-order species.

Growth and vibrational spectra of doped KMgF3 single crystal

The different ions doped KMgF3 single crystals are prepared by the vertical Bridgman method. The near-infrared absorption spectra for different parts of all as-growth crystals indicate that there is the best transparency in middle part. The correlation between the vibronic frequencies of Eu2+ and the site displacement of Cu+ co-doped ions is firstly studied, which indicates that Cu+ ions replace the site of the Mg2+ ions. The co-doped Eu2+ counteracts the charge misfit causing by the replacement of Mg2+ with Cu+. The overlapping of the emission spectra of the Eu2+ and the excitation spectra of the Cu+ results in the energy transfer from Eu2+ to Cu+.

Acid effects on protein molecular weight determination

The acid effects of some proteins on measuring their molecular weights were studied using matrix-assisted laser desorption/ionization time-of-flight mass spectrometry ( MALDI-TOF-MS) and electrospray ionization mass spectrometry (ESI-MS). It was found that the signal intensity was enhanced through adjusting the acid concentration in some protein samples. In this paper, both MALDI-MS and ESI-MS was applied to examine the molecular weights of several standard proteins. And the proper acid concentration was detected in these spectra. In the meanwhile, it demonstrates that some associations of proteins in solution can be preserved into the gas phase and observed by the "soft ionization" mass spectrometry.

Molecular orientation of copper phthalocyanine in thin films and their gas-sensing properties

Copper phthalocyanine derivative Langmuir-Blodgett (LB) films were prepared by vertical dipping and horizontal lifting methods. Molecular orientation of copper phthalocyanine derivative in thin films was studied by polarized UV-Vis spectra. The relationship between the molecular orientation of copper phthalocyanine in LB films and their gas-sensing properties was investigated.

Molecular orientation of copper phthalocyanine derivative ins copper phthalocyanine-Fe2O3 nanoparticles alternating LB films

Copper phthalocyanine-Fe2O3 nanoparticles alternating thin films were fabricated by Langmuir-Blodgett technique. Molecular orientation of [4-(4'-benzyloxy phenyl sulfonyl)phenoxy]-tris-4-(2,4-di-t-phenoxy) phthalocyanine copper (II) in its alternating LB films, deposited at different conditions,was studied by polarized UV-Vis spectra. The tilt extent of the copper phthalocyanine molecule omits LB films increases with the surface pressure of the subphase increasing on the same subphase, or with Fe2O3 concentration decreasing at the same pressure. The orientation of the copper phthalocyanine derivative is important for the gas-sensing properties. The bigger the tilt extent of the phthalocyanine molecule is, the greater the sensitivity of the film is.

Fluorescence spectra of hemorrhagin III from the snake venom of Agkistrodon acutus

Hemorrhagin III (AaH III) was separated and purified from the crude snake venom of Agkistrodon acutus, and its molecule weight was determined accurately to be 23; 284.4 +/- 0.1 by LDI1700-MALDI-TOF-MS. Emission spectra of AaH III showed that Trp residues were located by a great degree in the hydrophobic area. Addition of SDS and guanidine-HCl led to change of the molecular conformation of AaH III, and caused the fluorescence quenching of Trp residues. The red-shifted emission band of AaH III after adding guanidine-HCl showed that Trp residues exposed in polar solvents. The effects of pH, EDTA and metal ions on the fluorescence spectra of AaH III were also investigated.