965 resultados para Laser-induced plasma shutter technique


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Periodic nanostructures are observed on the surface of ZnSe after irradiation by a focused beam of a femtosecond Ti:sapphire laser, which are aligned perpendicular to the laser polarization direction. The period of self-organized grating structures is about 160 nm. The phenomenon is interpreted in terms of interference between the incident light field and the surface scattered wave of 800-nm laser pulses. With the laser polarization parallel to the moving direction we produce long-range Bragg-like gratings by slowly moving the crystal under a fixed laser focus. The nanograting orientation is adjusted by laser polarization and the accumulation effect.

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To attempt to control the quantum state of a physical system with a femtosecond two-colour laser field, a model for the two-level system is analysed as a first step. We investigate the coherent control of the two-colour laser pulses propagating in a two-level medium. Based on calculating the influence of the laser field with various laser parameters on the electron dynamics, it is found the electronic state can be changed up and down by choosing the appropriate laser pulses and the coherent control of the two-colour laser pulses can substantially modify the behaviour of the electronic dynamics: a quicker change of two states can be produced even for small pulse duration. Moreover, the oscillatory structures around the resonant frequency and the propagation features of the laser pulses depend sensitively on the relative phase of the two-colour laser pulses. Finally, the influence of a finite lifetime of the upper level is discussed in brief.

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Proton trapping and acceleration by an electron bubble-channel structure in laser interaction with high-density plasma is investigated by using three-dimensional particle-in-cell simulations. It is shown that protons can be trapped, bunched, and efficiently accelerated for appropriate laser and plasma parameters, and the proton acceleration is enhanced if the plasma consists mainly of heavier ions such as tritium. The observed results are analyzed and discussed in terms of a one-dimensional analytical three-component-plasma wake model.

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We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2. (C) 2006 Elsevier Ltd. All rights reserved.

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We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1-3 mu m long and 50-150 nm in diameter. The growth rate is 1-3 mu m/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics. (C) 2007 Elsevier Ltd. All rights reserved.

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A laser beam at wavelength 647 nm is focused on a sample of 5 mol% MgO-doped lithium niobate crystal for domain inversion by a conventional external electric field. In this case, a reduction of 36% in the electric field required for domain nucleation (nucleation field) is observed. To the best of our knowledge, it is the longest wavelength reported for laser-induced domain inversion. This extends the spectrum of laser inducing, and the experimental results are helpful to understand the nucleation dynamics under laser illumination. The dependence of nucleation fields on intensities of laser beams is analysed in experiments.

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The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect. (c) 2008 American Institute of Physics.

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The refractive indices of crystalline phase-change films are usually obtained by thermal-induced crystallization. However, this is not accurate, because the crystallization of phase-change film in rewritable optical disks is laser induced. In this study, we use the initializer to crystallize the phase-change films. The dependence of the refractive index n and the extinction coefficient k of the phase-change films on the initialization conditions are studied. Remarkable changes of the refractive indices (especially k) are found when the initialization laser power density is 6.63 mW/mum(2) and the initialization velocity is 4.0 m/s. At the same time, the structure changes of the phase-change films are also studied. This dependence is explained by the structure change of the films. These results are significant in improving the accuracy of optical design and the thermal simulation of phase-change optical disks, as well as in the study of phase-change optical disks at shorter wavelengths. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

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Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.