Design of a Portable Compliant Device for Estimating the Failure-Load of Mesoscale Cemented Sand Specimens

In this paper, we present the design and development of a portable, hand-operated composite compliant mechanism for estimating the failure-load of cm-sized stiff objects whose stiffness is of the order of 10 s of kN/m. The motivation for the design comes from the need to estimate the failure-load of mesoscale cemented sand specimens in situ, which is not possible with traditional devices used for large specimens or very small specimens. The composite compliant device, developed in this work, consists of two compliant mechanisms: a force-amplifying compliant mechanism (FaCM) to amplify sufficiently the force exerted by hand in order to break the specimen and a displacement-amplifying compliant mechanism (DaCM) to enable measurement of the force using a proximity sensor. The two mechanisms are designed using the selection-maps technique to amplify the force up to 100N by about a factor of 3 and measure the force with a resolution of 15 mN. The composite device, made using a FaCM, a DaCM, and a Hall effect-based proximity sensor, was tested on mesoscale cemented sand specimens that were 10mm in diameter and 20mm in length. The results are compared with those of a large commercial instrument. Through the experiments, it was observed that the failure-load of the cemented sand specimens varied from 0.95N to 24.33 N, depending on the percentage of cementation and curing period. The estimation of the failure-load using the compliant device was found to be within 1.7% of the measurements obtained using the commercial instrument and thus validating the design. The details of the design, prototyping, specimen preparation, testing, and the results comprise the paper.

Understanding Medical Device Patenting and Clinical Trials for Product Leadership

Unmet clinical needs remain the primary driving force for innovations in medical devices. While appropriate mechanisms to protect these innovative outcomes are essential, the performance of clinical trials to ensure safety is also mandated before the invention is ready for public use. Literature explaining the relationship between patenting activities and clinical trials of medical devices is scarce. Linking patent ownership to clinical trials may imply product leadership and value chain control. In this paper, we use patent data from Indian Patent Office (IPO), PCT, and data from Clinical Trials Registry of India (CTRI) to identify whether patent assignees have any role in leading as primary sponsors of clinical trials. A total of 42 primary sponsors are identified from the CTRI database in India. Number of patents awarded to these primary sponsors in the particular medical device, total number of patents awarded to the primary sponsor in all technologies, total number of patents in the specific medical device technology provides an indication of leadership and control in the value chain.

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC.

Damage mechanisms in stainless steel and chromium carbide coatings under controlled environment fretting conditions

Fretting is of a serious concern in many industrial components, specifically, in nuclear industry for the safe and reliable operation of various component and/or system. Under fretting condition small amplitude oscillations induce surface degradation in the form of surface cracks and/or surface wear. Comprehensive experimental studies have been carried out simulating different fretting regimes under ambient and vacuum (10(-9) MPa) conditions and, temperature up to 400 degrees C. Studies have been carried out with stainless steel spheres on stainless steel flats, and stainless steel spheres against chromium carbide, with 25% nickel chrome binder coatings. Mechanical responses are correlated with the damage observed. It has been observed that adhesion plays a vital role in material degradation process, and its effectiveness depends on mechanical variables such as normal load, interfacial tangential displacement, characteristics of the contacting bodies and most importantly on the environment conditions. Material degradation mechanism for ductile materials involved severe plastic deformation, which results in the initiation or nucleation of cracks. Ratcheting has been observed as the governing damage mode for crack nucleation under cyclic tangential loading condition. Further, propagation of the cracks has been observed under fatigue and their orientation has been observed to be governed by the contact conditions prevailing at the contact interface. Coated surfaces show damage in the form of brittle fracture and spalling of the coatings. Existence of stick slip has been observed under high normal load and low displacement amplitude. It has also been observed that adhesion at the contact interface and instantaneous cohesive strength of the contacting bodies dictates the occurrence of material transfer. The paper discusses the mechanics and mechanisms involved in fretting damage under controlled environment conditions. (C) 2015 Elsevier B.V. All rights reserved.

Damage quantification under sliding and seizure condition using first-of-a-kind fretting machine

In a practical situation, it is difficult to model exact contact conditions clue to challenges involved in the estimation of contact forces, and relative displacements between the contacting bodies. Sliding and seizure conditions were simulated on first-of-a-kind displacement controlled system. Self-mated stainless steels have been investigated in detail. Categorization of contact conditions prevailing at the contact interface has been carried out based on the variation of coefficient of friction with number of cycles, and three-dimensional fretting loops. Surface and subsurface micro-cracks have been observed, and their characteristic shows strong dependence on loading conditions. Existence of shear bands in the subsurface region has been observed for high strain and low strain rate loading conditions. Studies also include the influence of initial surface roughness on the damage under two extreme contact conditions. (C) 2013 Elsevier B.V. All rights reserved.

Effects of heat exchanger design on the performance of a solid state hydrogen storage device

Heat exchanger design plays a significant role in the performance of solid state hydrogen storage device. In the present study, a cylindrical hydrogen storage device with an embedded annular heat exchanger tube with radial circular copper fins, is considered. A 3-D mathematical model of the storage device is developed to investigate the sorption performance of metal hydride (MH). A prototype of the device is fabricated for 1 kg of MH alloy, LaNi5, and tested at constant supply pressure of hydrogen, validating the simulation results. Absorption characteristics of storage device have been examined by varying different operating parameters such as hydrogen supply pressure and cooling fluid temperature and velocity. Absorption process is completed in 18 min when these parameters are 15 bar, 298 K and 1 m/s respectively. A study of geometric parameters of copper fins (such as perforation, number and thickness of fin) has been carried out to investigate their effects on absorption process. Copyright (C) 2015, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.

A 1 V supercapacitor device with nanostructured graphene oxide/polyaniline composite materials

Polyaniline and graphene oxide composite on activated carbon cum reduced graphene oxide-supported supercapacitor electrodes are fabricated and electrochemically characterized in a three-electrode cell assembly. Attractive supercapacitor performance, namely high-power capability and cycling stability for graphene oxide/polyaniline composite, is observed owing to the layered and porous-polymeric-structured electrodes. Based on the materials characterization data in a three-electrode cell assembly, 1 V supercapacitor devices are developed and performance tested. A comparative study has also been conducted for polyaniline and graphene oxide/polyaniline composite-based 1 V supercapacitors for comprehending the synergic effect of graphene oxide and polyaniline. Graphene oxide/polyaniline composite-based capacitor that exhibits about 100 F g(-1) specific capacitance with faradaic efficiency in excess of 90% has its energy and power density values of 14 Wh kg(-1) and 72 kW kg(-1), respectively. Cycle-life data for over 1000 cycles reflect 10% capacitance degradation for graphene oxide/polyaniline composite supercapacitor.

Part I: Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device

In this paper, we study breakdown characteristics in shallow-trench isolation (STI)-type drain-extended MOSFETs (DeMOS) fabricated using a low-power 65-nm triple-well CMOS process with a thin gate oxide. Experimental data of p-type STI-DeMOS device showed distinct two-stage behavior in breakdown characteristics in both OFF-and ON-states, unlike the n-type device, causing a reduction in the breakdown voltage and safe operating area. The first-stage breakdown occurs due to punchthrough in the vertical structure formed by p-well, deep n-well, and p-substrate, whereas the second-stage breakdown occurs due to avalanche breakdown of lateral n-well/p-well junction. The breakdown characteristics are also compared with the STI-DeNMOS device structure. Using the experimental results and advanced TCAD simulations, a complete understanding of breakdown mechanisms is provided in this paper for STI-DeMOS devices in advanced CMOS processes.

Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device

Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. Design guidelines for p-well and deep-n-well doping profile are developed to shift the onset of the first-stage breakdown to a higher drain voltage and to avoid vertical punch-through leading to early breakdown. An optimal ratio between the OFF-state breakdown voltage and the ON-state resistance could be obtained. Furthermore, the impact of p-well/deep-n-well doping profile on the figure of merits of analog and digital performance is studied. This paper aids in the design of STI drain extended MOSFET devices for widest safe operating area and optimal mixed-signal performance in advanced system-on-chip input-output process technologies.

Design of a Wearable Remote Neonatal Health Monitoring Device

In this text we present the design of a wearable health monitoring device capable of remotely monitoring health parameters of neonates for the first few weeks after birth. The device is primarily aimed at continuously tracking the skin temperature to indicate the onset of hypothermia in newborns. A medical grade thermistor is responsible for temperature measurement and is directly interfaced to a microcontroller with an integrated bluetooth low energy radio. An inertial sensor is also present in the device to facilitate breathing rate measurement which has been discussed briefly. Sensed data is transferred securely over bluetooth low energy radio to a nearby gateway, which relays the information to a central database for real time monitoring. Low power optimizations at both the circuit and software levels ensure a prolonged battery life. The device is packaged in a baby friendly, water proof housing and is easily sterilizable and reusable.

Nickel Electrode for Improving Current Density in Organic Electronic Device

In this work, polymer diode performance was analyzed by using nickel as anode electrode from two kinds of nickel as starting materials, namely nickel wire Ni{B} and nickel nano-particle Ni{N}. Metal electrode surface roughness and grain morphology were investigated by atomic force microscope and scanning electron microscope, respectively. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured for the fabricated device at room temperature. Obtained result from the current-voltage characteristics shows an increment in the current density for nickel nano-particle top electrode device. The increase in the current density could be due to a reduction in built-in voltage at P3HT/Ni{N} interface.

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

A Deep-Blue Electroluminescent Device Based on a Coumarin Derivative

The design and synthesis is reported of 7-(9H-carbazol-9-yl)-4-methylcoumarin (Cz-Cm), comprising a carbazole donor moiety and a 4-methylcoumarin acceptor unit, for use in a blue organic light-emitting diode. A detailed solid state, theoretical and spectroscopic study was performed to understand the structure-property relationships. The material exhibits deep-blue emission and high photoluminescence quantum yield both in solution and in a doped matrix. A deep-blue electroluminescence emission at 430nm, a maximum brightness of 292cdm(-2) and an external quantum efficiency of 0.4% was achieved with a device configured as follows: ITO/NPD (30nm)/TCTA (20nm)/CzSi(10nm)/10wt% Cz-Cm:DPEPO (10nm)/TPBI (30nm)/LiF (1nm)/Al ITO=indium tin oxide, NPD=N,N-di(1-naphthyl)-N,N-diphenyl-(1,1-biphenyl)-4,4-diamine, TCTA=tris(4-carbazoyl-9-ylphenyl)amine, CzSi=9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole, DPEPO=bis2-(diphenylphosphino)phenyl]ether oxide, TPBI=1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene].