Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative

Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.

Impedance spectroscopy study of solid-state dye-sensitized solar cells with varying Spiro-OMeTAD concentration

This work reports on the changes of performance of solid-state cells dye-sensitized solar cells with the variation of concentration of spiro-OMeTAD between 5% and 25% in the fabrication of the cell. Variations of charge recombination and capacitance correlate with the improvement of current-potential characteristics at increasing spiro-OMeTAD content, which is explained by reduction of transport resistance for hole transport, the increase of charge separation in the dye molecules, and importantly, with the increase of the β-factor in the recombination resistance, that causes a reduction of the diode ideality factor. © 2010 Materials Research Society.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Estudo das propriedades de fotogeração e transporte de portadores de cargas em dispositivos optoeletrônicos orgânicos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Propriedades elétricas e modelagem da barreira de potencial do sistema varistor à base de SnO2-TiO2

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Tratamento da superfície do alumínio via eletrólise a plasma

This paper presents the study on the application of the electrolytic plasma for surface treatment of aluminum. A bibliographical study on the material of interest was preliminarily performed and later designed and built an electrolytic cell, including the excitation source. Unlike conventional electrolysis process, the plasma assisted carry on in the non-linear region of characteristic current/voltage curve. Therefore it requires for the on set of the process that the power supply operates on harder conditions than those on high current process. The plasma produced during the present investigation has temperatures in the range o 6,0.10 3 -7,0 .10 3 K, well above those found in conventional chemical process. It also shows a particular dynamic to promote changes on surface and to produce new materials. The plasma is generated by microdischarge in vapor or gas bubbles involved in physic-chemical processes in electrode regions of the electrolytic cell. The electrode material was the aluminum (7075). The Process Electrolytic Plasma Processing (EPP) is sensitive to various parameters such as operating voltage, current density, electrolyte, concentration of electrolyte, geometry of reactor, temperature of electrolytic solution and dynamic of the fluid in the cell. The experiments were carried on in order to find parameters for a stable abd steady operation. The choice for the electrolytic was silicate/alkali solution in various concentrations to operate in various voltage as well. Plasma was produced on negative (cathode) and positive (anode) electrode, in specific conditions. A stable operation on the cathode process was obtained with low concentration of the electrolytic in aqueous solution, current density around 250V effective voltage. For the evolution of plasma in anodic process it was required higher concentrations and higher... (Complete abstract click electronic access below)

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Técnicas de parametrização para o fluxo de carga continuado desenvolvidas a partir da análise das trajetórias de soluções do fluxo de carga

Pós-graduação em Engenharia Elétrica - FEIS

Subband mixing inducing negative resistance

A new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is performed for several temperatures. We solve the Schrodinger and Poisson equations self-consistently and have found that a large peak-to-valley ratio in the current-voltage characteristic occurs at the whole range of temperature investigated this effect indicates the potential application of this phenomenon for switching devices, where the transversal conductivity can be controlled due to the coupling between states belonging to different channels.

Contribuições para o estudo de atribuição de responsabilidades em circuitos elétricos de baixa tensão

Pós-graduação em Engenharia Elétrica - FEB

Desenvolvimento de células solares de perovskita baseadas em filmes de óxidos nanoestruturados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento de células solares de perovskita baseadas em filmes de óxidos nanoestruturados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Transient and d.c. analysis of the operation mechanism of light-emitting electrochemical cells

Light-emitting electrochemical cells (LECs) made of electroluminescent polymers were studied by d.c. and transient current-voltage and luminance-voltage measurements to elucidate the operation mechanisms of this kind of device. The time and external voltage necessary to form electrical double layers (EDLs) at the electrode interfaces could be determined from the results. In the low-and intermediate-voltage ranges (below 1.1 V), the ionic transport and the electronic diffusion dominate the current, being the device operation better described by an electrodynamic model. For higher voltages, electrochemical doping occurs, giving rise to the formation of a p-i-n junction, according to an electrochemical doping model. Copyright (C) EPLA, 2012

Molecular origin of charge traps in polyfluorene-based semiconductors

The comprehensive control of morphology and structure is of extreme importance in semiconducting polymers when used as active layers in optoelectronic devices. In the work reported here, a systematic investigation of the structural and dynamical properties of poly(9,9-di-n-octyl-fluorene-alt-benzothiadiazole), known as F8BT, and their correlation with electrical properties is presented when the material is used as an active layer in optoelectronic devices. By means of X-ray diffraction, one observes that in thick layer films (thickness of about 4 μm) grown by drop-cast deposition, a solvent induced crystalline phase exists which evolves to a stable phase as the temperature is raised. This was not observed in thin films (thickness of about 250 nm) prepared by spin-coating within the investigated temperature range. By modeling the current-voltages characteristics of both thick and thin film devices, important information on the influence of crystallization on the trapping states could be drawn. Furthermore, the temperature dependence of the charge carrier mobility was found to be closely related to that of the molecular relaxation processes. The understanding of the nature of such molecular relaxations, measured by solid-state nuclear magnetic resonance methods, allows one to understand the importance of molecular relaxations and microstructure changes on the trap states of the system.

Size-selective investigations of spectral and emission properties of small particles and nanotubes

In dieser Arbeit wurde die Elektronenemission von Nanopartikeln auf Oberflächen mittels spektroskopischen Photoelektronenmikroskopie untersucht. Speziell wurden metallische Nanocluster untersucht, als selbstorganisierte Ensembles auf Silizium oder Glassubstraten, sowie ferner ein Metall-Chalcogenid (MoS2) Nanoröhren-Prototyp auf Silizium. Der Hauptteil der Untersuchungen war auf die Wechselwirkung von fs-Laserstrahlung mit den Nanopartikeln konzentriert. Die Energie der Lichtquanten war kleiner als die Austrittsarbeit der untersuchten Proben, so dass Ein-Photonen-Photoemission ausgeschlossen werden konnte. Unsere Untersuchungen zeigten, dass ausgehend von einem kontinuierlichen Metallfilm bis hin zu Clusterfilmen ein anderer Emissionsmechanismus konkurrierend zur Multiphotonen-Photoemission auftritt und für kleine Cluster zu dominieren beginnt. Die Natur dieses neuen Mechanismus` wurde durch verschiedenartige Experimente untersucht. Der Übergang von einem kontinuierlichen zu einem Nanopartikelfilm ist begleitet von einer Zunahme des Emissionsstroms von mehr als eine Größenordnung. Die Photoemissions-Intensität wächst mit abnehmender zeitlicher Breite des Laserpulses, aber diese Abhängigkeit wird weniger steil mit sinkender Partikelgröße. Die experimentellen Resultate wurden durch verschiedene Elektronenemissions-Mechanismen erklärt, z.B. Multiphotonen-Photoemission (nPPE), thermionische Emission und thermisch unterstützte nPPE sowie optische Feldemission. Der erste Mechanismus überwiegt für kontinuierliche Filme und Partikel mit Größen oberhalb von mehreren zehn Nanometern, der zweite und dritte für Filme von Nanopartikeln von einer Größe von wenigen Nanometern. Die mikrospektroskopischen Messungen bestätigten den 2PPE-Emissionsmechanismus von dünnen Silberfilmen bei „blauer“ Laseranregung (hν=375-425nm). Das Einsetzen des Ferminiveaus ist relativ scharf und verschiebt sich um 2hν, wenn die Quantenenergie erhöht wird, wogegen es bei „roter“ Laseranregung (hν=750-850nm) deutlich verbreitert ist. Es zeigte sich, dass mit zunehmender Laserleistung die Ausbeute von niederenergetischen Elektronen schwächer zunimmt als die Ausbeute von höherenergetischen Elektronen nahe der Fermikante in einem Spektrum. Das ist ein klarer Hinweis auf eine Koexistenz verschiedener Emissionsmechanismen in einem Spektrum. Um die Größenabhängigkeit des Emissionsverhaltens theoretisch zu verstehen, wurde ein statistischer Zugang zur Lichtabsorption kleiner Metallpartikel abgeleitet und diskutiert. Die Elektronenemissionseigenschaften bei Laseranregung wurden in zusätzlichen Untersuchungen mit einer anderen Anregungsart verglichen, der Passage eines Tunnelstroms durch einen Metall-Clusterfilm nahe der Perkolationsschwelle. Die elektrischen und Emissionseigenschaften von stromtragenden Silberclusterfilmen, welche in einer schmalen Lücke (5-25 µm Breite) zwischen Silberkontakten auf einem Isolator hergestellt wurden, wurden zum ersten Mal mit einem Emissions-Elektronenmikroskop (EEM) untersucht. Die Elektronenemission beginnt im nicht-Ohmschen Bereich der Leitungsstrom-Spannungskurve des Clusterfilms. Wir untersuchten das Verhalten eines einzigen Emissionszentrums im EEM. Es zeigte sich, dass die Emissionszentren in einem stromleitenden Silberclusterfilm Punktquellen für Elektronen sind, welche hohe Emissions-Stromdichten (mehr als 100 A/cm2) tragen können. Die Breite der Energieverteilung der Elektronen von einem einzelnen Emissionszentrum wurde auf etwa 0.5-0.6 eV abgeschätzt. Als Emissionsmechanismus wird die thermionische Emission von dem „steady-state“ heißen Elektronengas in stromdurchflossenen metallischen Partikeln vorgeschlagen. Größenselektierte, einzelne auf Si-Substraten deponierte MoS2-Nanoröhren wurden mit einer Flugzeit-basierten Zweiphotonen-Photoemissions-Spektromikroskopie untersucht. Die Nanoröhren-Spektren wiesen bei fs-Laser Anregung eine erstaunlich hohe Emissionsintensität auf, deutlich höher als die SiOx Substratoberfläche. Dagegen waren die Röhren unsichtbar bei VUV-Anregung bei hν=21.2 eV. Eine ab-initio-Rechnung für einen MoS2-Slab erklärt die hohe Intensität durch eine hohe Dichte freier intermediärer Zustände beim Zweiphotonen-Übergang bei hν=3.1 eV.