Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films

The effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping during the GaN growth improves the electron mobility, but the best doping effect depends on the dislocation density of the sample. High quality about 4-mu m-thick MOCVD-grown GaN film with a room temperature electron mobility as high as 1005 cm(2)/V s is obtained by optimizing growth conditions. (c) 2006 American Institute of Physics.

Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

A step-graded InAlAs buffer layer and an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MM-HEMT) structures were grown by molecular beam epitaxy on GaAs (001) substrates, and rapid thermal annealing was performed on them in the temperature range 500-800 degreesC for 30 s. The as-grown and annealed samples were investigated with Hall measurements, and 77 K photoluminescence. After rapid thermal annealing, the resistivities of step-graded InAlAs buffer layer structures became high. This can avoid leaky characteristics and parasitic capacitance for MM-HEMT devices. The highest sheet carrier density n(s) and mobility mu for MM-HEMT structures were achieved by annealing at 600 and 650degreesC, respectively. The relative intensities of the transitions between the second electron subband to the first heavy-hole subband and the first electron subband to the first heavy-hole subband in the MM-HEMT InGaAs well layer were compared under different annealing temperatures. (C) 2002 American Institute of Physics.

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm(2)/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95x10(12) cm(-2) due to incomplete transfer of the electrons from the Si delta -doped layer to the well. (C) 2001 American Institute of Physics.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors

Thin films of phthalocyanine compounds show weak epitaxial growth on a monodomain film of a rod-like molecule (see figure). The resulting organic electronic devices exhibit high charge carrier mobilities close to those of the single-crystal devices.

Effect of doped dye on the charge-carrier transport and electroluminescent performance in molecularly doped polymer light-emitting diodes

The effects of the concentration of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6, 78-i,j)quinolizin-11-one (C545T) as dopant in polyfluorene (PFO) on the charge-carrier transport and electroluminescence (EL) performance were investigated by steady-state and transient EL measurements. A fully green emission from C545T was observed and the EL performance depends strongly on the C545T concentration. The mobility in the C545T-doped PFO film was determined by transient EL. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the C545T molecules. The mobility in C545T:PFO changed significantly with the C545T concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

Effects of doped dye on the charge carrier injection, transport, and electroluminescent performance in polymeric light-emitting diodes

The effects of doped fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) on the charge carrier injection, transport and electroluminescence (EL) performance in polyfluorene (PFO)-based polymer light-emitting diodes (PLEDs) were investigated by steady-state current-voltage (I-V) characteristics and transient EL measurements. A red EL from DCJTI was observed and the EL performance depended strongly on the DCJTI concentration. The analysis of the steady-state I-V characteristics at different DCJTI concentrations found that three regions was shown in the I-V characteristics, and each region was controlled by different processes depending on the applied electric field. The effect of the dopant concentration on the potential-barrier height of the interface is estimated using the Fowler-Nordheim model. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the DCJTI molecules. The mobility in DCJTI: PFO changed significantly with the DCJTI concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-quinolinolato) aluminum (Alq(3)) on the charge carrier transport in Alq(3):DCJTB was investigated by measuring the steady current-voltage characteristics and the transient electroluminescence. The dopant concentration dependence of the current-voltage relationship clearly indicates the carrier trapping by the DCJTB molecule. The DCJTB concentration significantly affects the electron mobility in Alq(3):DCJTB. The mobility has a nontrivial dependence on the doping level. For relatively low doping levels, less than 1%, the electron mobility of Alq(3):DCJTB decreases with the doping level. An increasing mobility is then observed if the dopant concentration is further increased, followed by a decrease for doping levels larger than similar to2%. The change of the electron mobility with the DCJTB concentration in Alq(3) is attributed to the additional energetic disorder due to potential fluctuations caused by the dipole-dipole interaction of random distribution dopant at the relatively low doping concentration, and to the phase separation at the high doping concentration.

Charge carrier injection and transport in PVK: Alq(3) blend films

We have investigated the current-voltage and electroluminescent (EL) characteristics of single-layer organic devices based on poly(9-vinylcarbazole) (PVK) and tris(8-hydroxyquinoline)aluminium (Alq(3)) blend with different PVK : Alq(3) concentrations. The experimental results from the observed thickness and temperature dependence clearly demonstrate that the current at low voltage is due to the holes injected at the anode and is space-charge limited, whereas the current at the high voltage that steeply increases is explained as the electron tunnelling injection at the cathode. The hole mobility is directly determined by space-charge-limited current at the low voltage region and decreases with increasing Alq(3) content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of electrons and holes in the blend film.

Determination of electron mobility in a blue-emitting alternating block copolymer by space-charge-limited current measurements

In this communication we analyse current versus voltage data obtained using one carrier injection at metal/polymer/metal structures, The used polymer is a soluble blue-emitting alternating block copolymer, Our experimental results demonstrate that the electron current is limited by a large amount of traps with exponential energy distribution in the copolymer. The electron ;mobility of 5.1 x 10(-10) cm(2)/V s is directly determined by space-charge-limited current measurements. The electron mobility is at least three orders of magnitude smaller than that for holes in the copolymer. (C) 1999 Elsevier Science Ltd. All rights reserved.

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2

Characterisation of chicken riboflavin carrier protein gene structure and promoter regulation by estrogen

Estrogen is an important steroid hormone that mediates most of its effects on regulation of gene expression by binding to intracellular receptors. The consensus estrogen response element (ERE) is a 13 bp palindromic inverted repeat with a three nucleotide spacer. However, several reports suggest that many estrogen target genes are regulated by diverse elements, such as imperfect EREs and ERE half sites (ERE 1/2),which are either the proximal or the distal half of the palindrome. To gain more insight into ERE half site-mediated gene regulation, we used a region from the estrogen-regulated chicken riboflavin carrier protein (RCP) gene promoter that contains ERE half sites. Using moxestrol, an analogue of estrogen and transient transfection of deletion and mutation containing RCP promoter/reporter constructs in chicken hepatoma (LMH2A) cells, we identified an estrogen response unit (ERU) composed of two consensus ERE 1/2 sites and one non-consensus ERE 1/2 site. Mutation of any of these sites within this ERU abolishes moxestrol response. Further, the ERU is able to confer moxestrol responsiveness to a heterologous promoter. Interestingly, RCP promoter is regulated by moxestrol in estrogen responsive human MCF-7 cells, but not in other cell lines such as NIH3T3 and HepG2 despite estrogen receptor-alpha (ER-�) co transfection. Electrophoretic mobility shift assays (EMSAs) with promoter regions encompassing the half sites and nuclear extracts from LMH2A cells show the presence of a moxestrol-induced complex that is abolished by a polyclonal anti-ER� antibody. Surprisingly, estrogen receptor cannot bind to these promoter elements in isolation. Thus, there appears to be a definite requirement for some other factor(s) in addition to estrogen receptor, for the generation of a suitable response of this promoter to estrogen. Our studies therefore suggest a novel mechanism of gene regulation by estrogen, involving ERE half sites without direct binding of ER to the cognate elements.

Estrogen regulation of chicken riboflavin carrier protein gene is mediated by ERE half sites without direct binding of estrogen receptor

Estrogen is an important steroid hormone that mediates most of its effects on regulation of gene expression by binding to intracellular receptors. The consensus estrogen response element (ERE) is a 13 bp palindromic inverted repeat with a three nucleotide spacer. However, several reports suggest that many estrogen target genes are regulated by diverse elements, such as imperfect EREs and ERE half sites (ERE 1/2), which are either the proximal or the distal half of the palindrome. To gain more insight into ERE half site-mediated gene regulation, we used a region from the estrogen-regulated chicken riboflavin carrier protein (RCP) gene promoter that contains ERE half sites. Using moxestrol, an analogue of estrogen and transient transfection of deletion and mutation containing RCP promoter/reporter constructs in chicken hepatoma (LMH2A) cells, we identified an estrogen response unit (ERU) composed of two consensus ERE 1/2 sites and one non-consensus ERE 1/2 site. Mutation of any of these sites within this ERU abolishes moxestrol response. Further, the ERU is able to confer moxestrol responsiveness to a heterologous promoter. Interestingly, RCP promoter is regulated by moxestrol in estrogen responsive human MCF-7 cells, but not in other cell lines such as NIH3T3 and HepG2 despite estrogen receptor-alpha (ER-�) co transfection. Electrophoretic mobility shift assays (EMSAs) with promoter regions encompassing the half sites and nuclear extracts from LMH2A cells show the presence of a moxestrol-induced complex that is abolished by a polyclonal anti-ER� antibody. Surprisingly, estrogen receptor cannot bind to these promoter elements in isolation. Thus, there appears to be a definite requirement for some other factor(s) in addition to estrogen receptor, for the generation of a suitable response of this promoter to estrogen. Our studies therefore suggest a novel mechanism of gene regulation by estrogen, involving ERE half sites without direct binding of ER to the cognate elements.