Deposition of small particles from turbulent flows

This paper deals with particle deposition onto solid walls from turbulent flows. The aim of the study is to model particle deposition in industrial flows, such as the one in gas turbines. The numerical study has been carried out with a two fluid approach. The possible contribution to the deposition from Brownian diffusion, turbulent diffusion and shear-induced lift force are considered in the study. Three types of turbulent two-phase flows have been studied: turbulent channel flow, turbulent flow in a bent duct and turbulent flow in a turbine blade cascade. In the turbulent channel flow case, the numerical results from a two-dimensional code show good agreement with numerical and experimental results from other resources. Deposition problem in a bent duct flow is introduced to study the effect of curvature. Finally, the deposition of small particles on a cascade of turbine blades is simulated. The results show that the current two fluid models are capable of predicting particle deposition rates in complex industrial flows.

Laser micromachining of sputtered DLC films

DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp2/sp3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details. © 2005 Elsevier B.V. All rights reserved.

Proposal of Sinomonas flava gen. nov., sp nov., and description of Sinomonas atrocyanea comb. nov to accommodate Arthrobacter atrocyaneus

A novel actinomycete strain, designated CW 108(T), was isolated from a forest soil in Anhui Province, China. The cells were strictly aerobic, non-motile, bent rods. The strain grew optimally at 30-37 degrees C and pH 6.0-8.0. Chemotaxonomically, the pepti

Intergranular and intragranular properties of superconducting multifilamentary Bi 2223 Ag tapes : comparison of electrical transport and magnetic measurement methods

Several experimental techniques have been used in order to characterize the properties of multifilamentary Bi-2223 / Ag tapes. Pristine samples were investigated by electrical resistivity, current-voltage characteristics and DC magnetic moment measurements. Much emphasis is placed on comparing transport (direct) and magnetic (indirect) methods for determining the critical current density as well as the irreversibility line and resolving usual lacks of consistency due to the difference in measurement techniques and data analysis. The effect of an applied magnetic field, with various strengths and directions, is also studied and discussed. Next, the same combination of experiments was performed on bent tapes in order to bring out relevant information regarding the intergranular coupling. A modified Brandt model taking into account different types of defects within the superconducting filaments is proposed to reconciliate magnetic and transport data.

Intragranular and intergranular behaviour of multifilamentary Bi-2223/Ag tapes

This communication aims at reporting the superconducting properties of Bi-2223/Ag tapes determined by using various measuring techniques. First, the original samples have been characterized by electrical resistance, AC susceptibility, and DC magnetization. The transport (intergranular) critical current vs. magnetic field was also determined at T = 77 K using pulsed currents up to 40 A. Next, the same combination of experiments was performed on bent tapes in order to bring out relevant information concerning the strength of the intergranular coupling. The results show that intergranular and intragranular currents differ by at least one order of magnitude. Finally, additional magnetic measurements were carried out in order to determine the anisotropy ratio Jc ab/Jc c, which was found to lie around 30. © 2002 Elsevier Science B.V. All rights reserved.

KHAWIA SAUROGOBII N. SP (CESTODA: CARYOPHYLLIDEA) FROM FRESHWATER FISH SAUROGOBIO SPP. (CYPRINIDAE) IN CHINA

Khawia saurogobii n. sp. is described from the intestine of the cyprinid fishes Saurogobio dabryi and Saurogobio dumerili in China. The new species belongs to the Lytocestidae and is placed in Khawia because of its afossate scolex, vitelline follicles in the cortical parenchyma, uterus not looping anterior to the cirrus sac, gonopores separate but close together in distinct genital atrium, external seminal vesicle absent, and postovarian follicles present. The new species differs from other congeneric species by the shape of the body markedly tapering posteriorly from the end of the anterior third, the shape of the scolex that is very short and markedly wider than the neck, spatulate without incisions, but shallow superficial grooves, vitelline follicles and testes starting immediately posterior to the scolex, and an ovary with long, posterior arms bent medially, thus giving the shape of an inverted A.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

布尔函数的非线性度量及其构造

布尔函数或者向量布尔函数是很多序列密码和分组密码的核心构件之一，因此这些函数密码学性质的好坏直接关系到密码系统的安全性和稳定性，所以构造密码学性质好的布尔函数或者分析布尔函数的密码学性质是一个十分有意义的研究工作。本文对有关问题进行了深入研究并得到一些有意义的结果。本文的主要结果有： (1) 对低差分均匀性函数的研究。由于完全非线性函数在几何、编码理论、密码学和设计中都有很多重要的应用，但是对完全非线性函数的性质研究比较少，因此本文研究了完全非线性函数的一些性质，得到了完全非线性函数的几个充要条件；几乎完全非线性函数抗击差分攻击是最优的，但是有几类已知的几乎完全非线性函数抗击线性攻击的能力还不知道，因此本文研究了三类几乎完全非线性函数抗击线性攻击的能力，即研究了三类几乎完全非线性函数非线性度的下界；本文还构造了差分均匀性为4的函数，这些函数由于其差分均匀性较低，同样能够较好的抗击差分攻击。 (2) 对布尔函数高阶非线性度的研究。非线性度是衡量布尔函数抗击线性攻击的能力，相对应的高阶非线性度是衡量布尔函数抗击高阶线性攻击的能力。在现有文献中研究布尔函数高阶非线性度的文献很少，因此本文研究了四类具有较高非线性度的布尔函数的二阶非线性度下界，这些下界刻画了这四类布尔函数抗击二阶线性攻击的能力。 (3)对单项式bent函数和半-bent函数的研究。单项式bent函数在bent函数的研究中有重要的意义，但是现在知道的单项式bent函数并不多，本文在已有的单项式bent函数的基础上构造了一类新的单项式bent函数；bent函数虽然有最优的非线性度，但是由于bent函数不具有平衡性，因此bent函数并不能直接用到密码系统中，于是本文构造了几类非线性度较高并且可以使其平衡的半-bent函数。同时本文还给出了一种由已有的半-bent函数或者已有的bent函数构造新的半-bent函数的方法，这种方法的优点是不增加新函数变元的个数。

Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator

The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (＜-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Weak epitaxy growth and phase behavior of planar phthalocyanines on p-sexiphenyl monolayer film

We systematically investigated the weak epitaxy growth (WEG) behavior of a series of planar phthalocyanine compounds (MPc), i.e., metal-free phthalocyanine (H2PC), nickel phthalocyanine (NiPc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), iron phthalocyanine (FePc); cobalt phthalocyanine (CoPc), grown on a p-sexiphenyl (p-6P) monolayer film by selected area electron diffraction (SAED) and atomic force microscopy (AFM). Two types of epitaxial relations, named as incommensurate epitaxy and commensurate epitaxy, were identified between phthalocyanine compounds and the substrate of the p-6P film.