970 resultados para uni-traveling-carrier


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A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

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A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

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In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsibvity of 0.68 A/W at 1.55-mu m without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 mu m were achieved.

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A new evanescently coupled uni-traveling carrier photodiode (EC-UTC-PD) is designed, fabricated and characterized, which incorporates a multimode diluted waveguide structure and UTC active waveguide structure together. A high responsivity of 0.68A/W at 1.55-mu m without an anti-reflection coating, a linear photocurrent responsivity of more than 21 mA, and a large-1 dB vertical alignment tolerance of 2.5 mu m are achieved.

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We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Omega thin-film resistor and a bypass capacitor integrated on a chip.

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Based on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. This device is fully compatible with monolithic micro-wave integrated circuits (MMIC) and heterojunction bipolar transistor (HBT) in material and process. The DC characteristics reveal that the new ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V-EC = 1 V) were obtained.

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The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.

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This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

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A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

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An important aspect of designing any product is validation. Virtual design process (VDP) is an alternative to hardware prototyping in which analysis of designs can be done without manufacturing physical samples. In recent years, VDP have been generated either for animation or filming applications. This paper proposes a virtual reality design process model on one of the applications when used as a validation tool. This technique is used to generate a complete design guideline and validation tool of product design. To support the design process of a product, a virtual environment and VDP method were developed that supports validation and an initial design cycle performed by a designer. The product model car carrier is used as illustration for which virtual design was generated. The loading and unloading sequence of the model for the prototype was generated using automated reasoning techniques and was completed by interactively animating the product in the virtual environment before complete design was built. By using the VDP process critical issues like loading, unloading, Australian Design rules (ADR) and clearance analysis were done. The process would save time, money in physical sampling and to large extent in complete math generation. Since only schematic models are required, it saves time in math modelling and handling of bigger size assemblies due to complexity of the models. This extension of VDP process for design evaluation is unique and was developed, implemented successfully. In this paper a Toll logistics and J Smith and Sons car carrier which is developed under author’s responsibility has been used to illustrate our approach of generating design validation via VDP.

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In this paper, the problems of three carrier phase ambiguity resolution (TCAR) and position estimation (PE) are generalized as real time GNSS data processing problems for a continuously observing network on large scale. In order to describe these problems, a general linear equation system is presented to uniform various geometry-free, geometry-based and geometry-constrained TCAR models, along with state transition questions between observation times. With this general formulation, generalized TCAR solutions are given to cover different real time GNSS data processing scenarios, and various simplified integer solutions, such as geometry-free rounding and geometry-based LAMBDA solutions with single and multiple-epoch measurements. In fact, various ambiguity resolution (AR) solutions differ in the floating ambiguity estimation and integer ambiguity search processes, but their theoretical equivalence remains under the same observational systems models and statistical assumptions. TCAR performance benefits as outlined from the data analyses in some recent literatures are reviewed, showing profound implications for the future GNSS development from both technology and application perspectives.