916 resultados para hexagonal GaN
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.
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The diluted magnetic semiconductors are promising materials for spintronic applications. Usually one intents to find the ferromagnetic state but recently the antiferromagnetism (AFM) was proposed to have some advantages. In this work, we verify the possibility to obtain spin polarization with an AFM state. In particular, we studied GaN 5% double doped with two different transition metals atoms (Mn and Co or Cr and Ni), forming the Mn(x)Co(0.056-x)Ga(0.944)N and Cr(x)Ni(0.056-x)Ga(0.944)N quaternary alloys. In order to simulate these systems in a more realistic way, and take into account composition fluctuations, we adapted the generalized quasichemical approach to diluted alloys, which is used in combination with spin density-functional theory. We find that is possible to obtain an AFM ground state up to 70% spin polarization.
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In this study, fluid precursor formulations for subcutaneous injection and in situ formation of hexagonal phase gels upon water absorption were developed as a strategy to sustain the release of naltrexone, a drug used for treatment of drug addiction. Precursor formulations were obtained by combining BRIJ 97 with propylene glycol (PG, 5-70%, w/w). To study the phase behavior of these formulations, water was added at 10-90% (w/w), and the resulting systems were characterized by polarized light microscopy. Two precursor formulations containing BRIJ:PG at 95:5 (w/w, referred to as BRIJ-95) and at 80:20 (w/w, referred to as BRIJ-80) were chosen. Naltrexone was dissolved at 1% or suspended at 5% (w/w). Precursor formulations were transformed into hexagonal phases when water content exceeded 20%. Water uptake followed second-order kinetics, and after 2-4 h all precursor formulations were transformed into hexagonal phases. Drug release was prolonged by the precursor formulations (compared to a drug solution in PBS), and followed pseudo-first order kinetics regardless of naltrexone concentration. The release from BRIJ-80 was significantly higher than that from BRIJ-95 after 48 h. The relative safety of the precursor formulations was assessed in cultured fibroblasts. Even though BRIJ-95 was more cytotoxic than BRIJ-80, both precursor formulations were significantly less cytotoxic than sodium lauryl sulfate (considered moderate-to-severe irritant) at the same concentration (up to 50 mu g/mL). These results suggest the potential of BRIJ-based precursor formulations for sustained naltrexone release. (C) 2011 Elsevier By. All rights reserved.
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Various mesoporous catalysts with titanium loadings between 0.5 and 4 Ti wt. % and surface areas between 600 and 1,600 m(2)/g were synthesized using the molecular designed dispersion technique. These catalysts were tested using toluene oxidation in a fixed bed reactor at temperatures between 300 and 550degreesC. The reaction products were found to be CO2 and CO with selectivity towards CO2 above 80% for all catalysts. The catalytic activity of the catalysts increases with titanium loading. The total conversion at 550degreesC was not affected by the textural porosity, but increased textural porosity did significantly reduce the ignition temperature by up to 50degreesC. The Thiele modulus was calculated to be much less than one for all these materials indicating that the reaction rate is not diffusion, limited.
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We present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation.
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The paper formulates a genetic algorithm that evolves two types of objects in a plane. The fitness function promotes a relationship between the objects that is optimal when some kind of interface between them occurs. Furthermore, the algorithm adopts an hexagonal tessellation of the two-dimensional space for promoting an efficient method of the neighbour modelling. The genetic algorithm produces special patterns with resemblances to those revealed in percolation phenomena or in the symbiosis found in lichens. Besides the analysis of the spacial layout, a modelling of the time evolution is performed by adopting a distance measure and the modelling in the Fourier domain in the perspective of fractional calculus. The results reveal a consistent, and easy to interpret, set of model parameters for distinct operating conditions.
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We present an algorithm for bandwidth allocation for delay-sensitive traffic in multi-hop wireless sensor networks. Our solution considers both periodic as well as aperiodic real-time traffic in an unified manner. We also present a distributed MAC protocol that conforms to the bandwidth allocation and thus satisfies the latency requirements of realtime traffic. Additionally, the protocol provides best-effort service to non real-time traffic. We derive the utilization bounds of our MAC protocol.
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Hexagonal wireless sensor network refers to a network topology where a subset of nodes have six peer neighbors. These nodes form a backbone for multi-hop communications. In a previous work, we proposed the use of hexagonal topology in wireless sensor networks and discussed its properties in relation to real-time (bounded latency) multi-hop communications in large-scale deployments. In that work, we did not consider the problem of hexagonal topology formation in practice - which is the subject of this research. In this paper, we present a decentralized algorithm that forms the hexagonal topology backbone in an arbitrary but sufficiently dense network deployment. We implemented a prototype of our algorithm in NesC for TinyOS based platforms. We present data from field tests of our implementation, collected using a deployment of fifty wireless sensor nodes.
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Galliumnitrid, elektrische und photoelektrische Eigenschaften, Heterostrukturen, Störstellen, Defekte, Dotierung, Ionenimplantation, Schottky-Raumladung
Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy
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Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014
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Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014