803 resultados para PZT film


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This work reports dielectric measurements performed on Pb(Zr0.53Ti0.47)O3 (PZT) thin films prepared by a polymeric precursor method. The -E curves obtained for the PZT film measured at 100 kHz, under a small ac 0.2 kV/cm signal-test and a dc scan featured a typical butterfly curve. However, the -E curves obtained for PZT film under a dc scan, with a scan rate of 0.003 V/s, shows a pronounced asymmetry. The absence of a symmetric secondary peak in -E curves could be an indication of essentially 180 domain switching.

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Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2012 IEEE.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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This paper reports studies on dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films crystallized by conventional thermal annealing (CTA) and rapid thermal annealing (RTA) in air, oxygen and nitrogen atmospheres to better understand, control and optimize these properties. The dielectric constant (epsilon) and dissipation factor (tan delta) values, at a frequency of 100 kHz; for film crystallized in air by CTA process, were 358 and 0.039, respectively. Considering the same frequency for film crystallized in air by RTA, these values were 611 and 0.026, respectively. The different dielectric values were justified by a space-charge or interfacial polarization in films, often characterized as Maxwell-Wagner type. This effect was also responsible to dispersion at frequencies above 1 MHz in film crystallized in air by CTA process and film crystallized by RTA in oxygen atmosphere. The film crystallized by RTA under nitrogen atmosphere presented an evident dispersion at frequencies around 100 Hz, characterized by an increase in both epsilon and tan delta. This dispersion was attributed to conductivity effects. The remanent polarization (P-r) and coercive field (E-c) were also obtained for all films. Films obtained from RTA in air presented higher P-r (17.8 muC cm(-2)) than film crystallized from CTA (7.8 muC cm(-2)). As a function of the crystallization atmospheres, films crystallized by RTA in air and nitrogen presented essentially the same P-r values (around 18 muC cm(-2)) but the P-r (3.9 muC cm(-2)) obtained from film crystallized under oxygen atmosphere was profoundly influenced.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Composites, made of lead zirconate titanate (PZT) ceramic powder and castor oil-based polyurethane (PU), were prepared in the film form. The films were obtained in the thickness range 100-300 mum using up to 50/50 vol.% of ceramic. Another composite (PZT/C/PU) was obtained by adding a small amount (1.0 vol.%) of graphite (C) to the PZT/PU composite. By increasing the conductivity of PU-containing graphite, polarization of PZT could be carried out with better efficiency. A comparison of piezo- and pyroelectric activities and spatial distribution of polarization between graphite doped and undoped composites reveal the advantages of using semiconductor filler. These composites were used as sensors to detect acoustic emission (AE). The detection was made using two simulated sources of AE, i.e., ball bearing drop and pencil lead break. PZT/C/PU composite was able to detect both flexural and extensional components of wave vibration. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.

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Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Preparation of protective coating possessing antimicrobial properties is present day need as they increase the shelf life of fruits and vegetables. In the present study, preparation of agar-silver nanoparticle film for increasing the shelf life of fruits is reported. Silver nanoparticles (Ag-NPs) biosynthesised using an extract of Ocimum sanctum leaves, were mixed with agar-agar to prepare an agar-silver nanoparticles (A-AgNp) film. This film was surface-coated over the fruits, Citrus aurantifolium (Thornless lime) and Pyrus malus (Apple), and evaluated for the determination of antimicrobial activity of A-AgNp films using disc diffusion method, weight loss and shelf life of fruits. This study demonstrates that these A-AgNp films possess antimicrobial activity and also increase the shelf life of fruits.

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Pathological conditions associated with the impairment of nitric oxide (NO) production in the vasculature, such as Raynaud's syndrome and diabetic angiopathy, have stimulated the development of new biomaterials capable of delivering NO topically. With this purpose, we modified poly(vinyl-alcohol) (PVA) by chemically crosslinking it via esterification with mercaptosuccinic acid. This reaction allowed the casting of sulfhydrylated PVA (PVA-SH) films. Differential scanning calorimetry and X-ray diffractometry showed that the crosslinking reaction completely suppressed the crystallization of PVA, leading to a non-porous film with a homogeneous distribution of -SH groups. The remaining free hydroxyl groups in the PVA-SH network conferred partial hydrophylicity to the material, which was responsible for a swelling degree of ca. 110%. The PVA-SH films were subjected to an S-nitrosation reaction of the -SH groups, yielding a PVA containing S-nitrosothiol groups (PVA-SNO). Amperometric and chemiluminescence measurements showed that the PVA-SNO films were capable of releasing NO spontaneously after immersion in physiological medium. Laser Doppler-flowmetry, used to assess the blood flow in the dermal microcirculation, showed that the topical application of hydrated PVA-SNO films on the health skin led to a dose- and time-dependent increase of more than 5-fold in the dermal baseline blood flow in less than 10min, with a prolonged action of more than 4h during continuous application. These results show that PVA-SNO films might emerge as a new material with potential for the topical treatment of microvascular skin disorders.

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An amperometric lactate biosensor with lactate oxidase immobilized into a Prussian Blue (PB) modified electrode was fabricated. The advantage of using cetyltrimethylammonium bromide (CTAB) in the electrodeposition step of PB films onto glassy carbon surfaces was confirmed taking into account both the stability and sensitivity of the measurements. The biosensor was used in the development of a FIA amperometric method for the determination of lactate. Under optimal operating conditions (pH = 6.9, E = -0.1 V), the linear response of the method was extended up to 0.28 µmol L-1 lactate with a limit of detection of 0.84 mmol L-1. The repeatability of the method for injections of a 0.28 mmol L-1 lactate solution was 2.2 % (n = 18). The usefulness of the method was demonstrated by determining lactate in beer samples and the results were in good agreement with those obtained by using a reference spectrophotometric enzyme method.

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This work reports on the crystallization of amorphous silicon (a-Si) films doped with 1 at. % of nickel. The films, with thicknesses ranging from 10 to 3000 nm, were deposited using the cosputtering method onto crystalline quartz substrates. In order to investigate the crystallization mechanism in detail, a series of undoped a-Si films prepared under the same deposition conditions were also studied. After deposition, all a-Si films were submitted to isochronal thermal annealing treatments up to 1000 degrees C and analyzed by Raman scattering spectroscopy. Based on the present experimental results, it is possible to state that (a) when compared to the undoped a-Si films, those containing 1 at. % of Ni crystallize at temperatures similar to 100 degrees C lower, and that (b) the film thickness influences the temperature of crystallization that, in principle, tends to be lower in films thinner than 1000 nm. The possible reasons associated to these experimental observations are presented and discussed in view of some experimental and thermodynamic aspects involved in the formation of ordered Si-Si bonds and in the development of Ni-silicide phases. (c) 2008 American Institute of Physics.