Dimensionality effects in the local density of states of ferromagnetic hosts probed via STM: Spin-polarized quantum beats and spin filtering

We theoretically investigate the local density of states (LDOS) probed by an STM tip of ferromagnetic metals hosting a single adatom and a subsurface impurity. We model the system via the two-impurity Anderson Hamiltonian. By using the equation of motion with the relevant Green's functions, we derive analytical expressions for the LDOS of two host types: a surface and a quantum wire. The LDOS reveals Friedel-like oscillations and Fano interference as a function of the STM tip position. These oscillations strongly depend on the host dimension. Interestingly, we find that the spin-dependent Fermi wave numbers of the hosts give rise to spin-polarized quantum beats in the LDOS. Although the LDOS for the metallic surface shows a damped beating pattern, it exhibits the opposite behavior in the quantum wire. Due to this absence of damping, the wire operates as a spatially resolved spin filter with a high efficiency. © 2013 American Physical Society.

Effect of inter-adatoms correlations on the local density of states of graphene

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Spin-resolved local density of states for an Anderson adatom in a ferromagnetic island

In this work, we investigate theoretically the spin-resolved local density of states (SR-LDOS) of a ferromagnetic (FM) island hybridized with an adatom, which is described by the Single Impurity Anderson Model (SIAM). Our results are comparable with Scanning Tunneling Microscope (STM) experimental data. © 2012 Springer Science+Business Media, LLC.

Derivation of the probability distribution function for the local density of states of a disordered quantum wire via the replica trick and supersymmetry

We consider the statistical properties of the local density of states of a one-dimensional Dirac equation in the presence of various types of disorder with Gaussian white-noise distribution. It is shown how either the replica trick or supersymmetry can be used to calculate exactly all the moments of the local density of states.' Careful attention is paid to how the results change if the local density of states is averaged over atomic length scales. For both the replica trick and supersymmetry the problem is reduced to finding the ground state of a zero-dimensional Hamiltonian which is written solely in terms of a pair of coupled spins which are elements of u(1, 1). This ground state is explicitly found for the particular case of the Dirac equation corresponding to an infinite metallic quantum wire with a single conduction channel. The calculated moments of the local density of states agree with those found previously by Al'tshuler and Prigodin [Sov. Phys. JETP 68 (1989) 198] using a technique based on recursion relations for Feynman diagrams. (C) 2001 Elsevier Science B.V. All rights reserved.

Determination of local density of states in amorphous oxide semiconductors with Kelvin Probe Force Microscopy

Amorphous semiconductors are important materials as they can be deposited by physical deposition techniques on large areas and even on plastic substrates. Therefore, they are crucial for transistors in large active matrices for imaging and transparent wearable electronics. The most widely applied candidate for amorphous thin film transistors production is Indium Gallium Zinc Oxide (IGZO). It is attracting much interest because of its optical transparency, facile processing by sputtering deposition and notable improved charge carrier mobility with respect to hydrogenated amorphous silicon a-Si:H. Degradation of the device and long-term performance issues have been observed if IGZO thin film transistors are subjected to electrical stress, leading to a modification of IGZO channel properties and subthreshold slope. Therefore, it is of great interest to have a reliable and precise method to study the conduction band tail, and the density of states in amorphous semiconductors. The aim of this thesis is to develop a local technique using Kelvin Probe Force Microscopy to study the evolution of IGZO DOS properties. The work is divided into three main parts. First, solutions to the non-linear Poisson-Boltzmann equation of a metal-insulator-semiconductor junction describing the charge accumulation and its relation to DOS properties are elaborated. Second macroscopic techniques such as capacitance voltage (CV) measurements and photocurrent spectroscopy are applied to obtain a non-local estimate of band-tail DOS properties in thin film transistor samples. The third part of my my thesis is dedicated to the KPFM measurements. By fitting the data to the developed numerical model, important parameters describing the amorphous conduction band tail are obtained. The results are in excellent agreement with the macroscopic characterizations. KPFM result is comparable also with non-local optoelectronic characterizations, such as photocurrent spectroscopy.

On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.

Density of states in high-Tc superconductors

The density of states and the low temperature specific heat of higb-Tc superconductors are calculated in a functional integral formalism using the slave boson technique. The manybody calculation in a saddle point approximation shows that the Iow energy sector is dominated by 3 single band. The calculated values of density of states are in good agreement with experimental results.

Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Capacitance Spectroscopy: A Versatile Approach To Resolving the Redox Density of States and Kinetics in Redox-Active Self-Assembled Monolayers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Determination of density of states in PPS from space-charge-limited current measurements

Space-charge-limited currents measurements have been carried out on undoped amorphous poly p-phenylene sulfide. The scaling law is checked for different samples with varying thickness, and J-V data analyzed. The position of the quasi-Fermi level and the density of states was obtained.

Baryon and meson density of states

In a finite size bag like picture consisting of quarks (2 flavour) and gluons with SU(3) colour singlet restriction on the partition function and the chemical potential μ ≠ 0 with the constraint that the baryon number b = 0 and b = 1 for mesons and baryons, respectively we find a very good agreement with baryon density of states upto 2 GeV and with mesonic ones upto 1.3 GeV. Similar to a hadron-scale string theory our calculation also suggests that beyond 1.3 GeV there should exist exotic mesons.

Th2NiC2: a low density of states superconductor

The metallic carbides exhibit many novel prototypes of crystalline structure. Among these compounds Th2NiC2 was reported in 1991 as a new carbide which crystallizes in the U2IrC2 prototype structure. In this work we report a reinvestigation of the synthesis of this compound. We find that Th2NiC2 is a new superconductor. Our results suggest that this phase is stable only at high temperatures in the system Th-Ni-C. The substitution of Th by Sc stabilizes the phase and improves the superconducting properties. The highest superconducting critical temperature occurs at 11.2 K with nominal composition Th1.8Sc0.2NiC2. The electronic coefficient determined by specific heat measurements is close to zero. This unusual result can be explained by covalent bonding in the compound.

Circularly Polarized Photoluminescence as a Probe of Density of States in GaAs/AlGaAs Quantum Hall Bilayers

Polarized magnetophotoluminescence is employed to study the energies and occupancies of four lowest Landau levels in a couple quantum Hall GaAs/AlGaAs double quantum well. As a result, a magnetic field-induced redistribution of charge over the Landau levels manifesting to the continuous formation of the charge density wave and direct evidence for the symmetric-antisymmetric gap shrinkage at v = 3 are found. The observed interlayer charge exchange causes depolarization of the ferromagnetic ground state.

Tunnelling density of states at Coulomb-blockade peaks

We calculate the tunnelling density of states (TDoS) for a quantum dot in the Coulomb-blockade regime, using a functional integral representation with allowing correctly for the charge quantisation. We show that in addition to the well-known gap in the TDoS in the Coulomb-blockade valleys, there is a suppression of the TDoS at the peaks. We show that such a suppression is necessary in order to get the correct result for the peak of the differential conductance through an almost close quantum dot.

Universal Non-Debye Scaling in the Density of States of Amorphous Solids.

At the jamming transition, amorphous packings are known to display anomalous vibrational modes with a density of states (DOS) that remains constant at low frequency. The scaling of the DOS at higher packing fractions remains, however, unclear. One might expect to find a simple Debye scaling, but recent results from effective medium theory and the exact solution of mean-field models both predict an anomalous, non-Debye scaling. Being mean-field in nature, however, these solutions are only strictly valid in the limit of infinite spatial dimension, and it is unclear what value they have for finite-dimensional systems. Here, we study packings of soft spheres in dimensions 3 through 7 and find, away from jamming, a universal non-Debye scaling of the DOS that is consistent with the mean-field predictions. We also consider how the soft mode participation ratio evolves as dimension increases.