Arquivos da Imigração no contexto da hospedaria de imigrantes de São Paulo

Desde sua inauguração em 1888 até 1978, a Hospedaria de Imigrantes de São Paulo atuou na recepção, triagem e encaminhamento de aproximadamente 3,5 milhões de trabalhadores (imigrantes e migrantes internos) para diversos setores da agricultura paulista. Parte significativa da documentação produzida ou depositada nessa Instituição é composta por suportes como: livros de registro, fichas de identificação e listas de bordo. Sobre esses incidem interesses diversos. Por um lado, são fontes que revelam informações importantes sobre a memória (coletiva) da imigração para São Paulo ao passo que, por outro, expõem informações pessoais que podem ser consideradas de foro privado ou pertinentes a outro sentido da memória.

Nanoscopic photoluminescence memory as a fingerprint of complexity in self-assembled alkyl/siloxane hybrids

A thermally activated photoluminescence memory effect, induced by a reversible order-disorder phase transition of the alkyl chains, is reported for highly organized bilayer alkyl/siloxane hybrids (see figure; left at room temperature, right at 120 degrees C). The emission energy is sensitive to the annihilation/formation of the hydrogen-bonded amide-amide array displaying a unique nanoscopic sensitivity (ca. 150 nm).

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

How the interplay between individual spatial memory and landscape persistence can generate population distribution patterns

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)