Exact dynamics of single-qubit-gate fidelities under the measurement-based quantum computation scheme

Measurement-based quantum computation is an efficient model to perform universal computation. Nevertheless, theoretical questions have been raised, mainly with respect to realistic noise conditions. In order to shed some light on this issue, we evaluate the exact dynamics of some single-qubit-gate fidelities using the measurement-based quantum computation scheme when the qubits which are used as a resource interact with a common dephasing environment. We report a necessary condition for the fidelity dynamics of a general pure N-qubit state, interacting with this type of error channel, to present an oscillatory behavior, and we show that for the initial canonical cluster state, the fidelity oscillates as a function of time. This state fidelity oscillatory behavior brings significant variations to the values of the computational results of a generic gate acting on that state depending on the instants we choose to apply our set of projective measurements. As we shall see, considering some specific gates that are frequently found in the literature, the fast application of the set of projective measurements does not necessarily imply high gate fidelity, and likewise the slow application thereof does not necessarily imply low gate fidelity. Our condition for the occurrence of the fidelity oscillatory behavior shows that the oscillation presented by the cluster state is due exclusively to its initial geometry. Other states that can be used as resources for measurement-based quantum computation can present the same initial geometrical condition. Therefore, it is very important for the present scheme to know when the fidelity of a particular resource state will oscillate in time and, if this is the case, what are the best times to perform the measurements.

The influence of the loop between residues 223-235 in beetle luciferase bioluminescence spectra: A solvent gate for the active site of pH-sensitive luciferases

Beetle luciferases emit a wide range of bioluminescence colors, ranging from green to red. Firefly luciferases can shift the spectrum to red in response to pH and temperature changes, whereas click beetle and railroadworm luciferases do not. Despite many studies on firefly luciferases, the origin of pH-sensitivity is far from being understood. Through comparative site-directed mutagenesis and modeling studies, using the pH-sensitive luciferases (Macrolampis and Cratomorphus distinctus fireflies) and the pH-insensitive luciferases (Pyrearinus termitilluminans, Phrixotrix viviani and Phrixotrix hirtus) cloned by our group, here we show that substitutions dramatically affecting bioluminescence colors in both groups of luciferases are clustered in the loop between residues 223-235 (Photinus pyralis sequence). The substitutions at positions 227, 228 and 229 (P. pyralis sequence) cause dramatic redshift and temporal shift in both groups of luciferases, indicating their involvement in labile interactions. Modeling studies showed that the residues Y227 and N229 are buried in the protein core, fixing the loop to other structural elements participating at the bottom of the luciferin binding site. Changes in pH and temperature (in firefly luciferases), as well as point mutations in this loop, may disrupt the interactions of these structural elements exposing the active site and modulating bioluminescence colors. © 2007 The Authors.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)