Structural transition on Pb1-xSrxTiO3 produced by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Lanthanum-doped Bi4Ti3O12 prepared by the soft chemical method: Rietveld analysis and piezoelectric properties

Bi4-xLaxTi3O12 (BLT) thin films and powders with x ranging from 0 to 0.75 were prepared by the polymeric precursor solution. The effect of lanthanum on the structure of BIT powders was investigated by Rietveld Method. The increase of lanthanum content does not lead to any secondary phases. Orthorhombicity of the bismuth titanate (BIT) crystal lattice decreased with the increase of lanthanum content due the reduction of a/b ratio. The BLT films show piezoelectric coefficients of 45, 19, 16 and 10 pm/V for x = 0, 0.25, 0.50 and 0.75, respectively. The piezoelectric response is strongly reduced by the amount of lanthanum added to the system. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structure and microstructure of PbTiO3 thin films obtained from hybrid chemical method

PbTiO3 thin films were deposited on Si(100) via hybrid chemical method and crystallized between 400 and 700 degreesC to study the effect of the crystallization kinetics on structure and microstructure of these materials. X-ray diffraction (XRD) technique was used to study the structure of the crystallized films. In the temperature range investigated, the lattice strain (c/a) presented a maximum value (c/a = 1.056) for film crystallized at 600 degreesC for I h. Atomic force microscopy (AFM) was used in investigation of the microstructure of the films. The rms roughness of the films linearly increases with temperature and ranged from 1.25 to 9.04 nm while the grain sizes ranged from 130.6 to 213.6 nm. Greater grain size was observed for film crystallized at 600 degreesC for 1 h. (C) 2002 Elsevier B.V. S.A. All rights reserved.

Preparation of pyrochlore-free PMN by an alternative chemical method

This work reports the synthesis of the MgNb(2)O(6) and the ferroelectric lead magnesium niobate Pb(Mg(1/3)Nb(2/3))O(3) (PMN) using fine precursor powders obtained from a chemical Oxide Precursor Method (OPM). To obtain pyrochlore-free PMN ceramics, the synthesis of the precursor MgNb(2)O(6) powders was studied for 2-25 mol% excess of MgO and 10 mol% excess of PbO. Structural and microstructural properties of the sintered ceramics obtained by the cited method and by the classical columbite method were studied and compared. Results lead to good quality, pyrochlore-free PMN ceramic prepared by OPM, presenting greater grain size if compared with ceramic prepared by columbite method.

SrZrO3 powders obtained by chemical method: Synthesis, characterization and optical absorption behaviour

Strontium zirconate (SrZrO3) powders have been synthesized by the polymeric precursor method after heat treatment at different temperatures for 2 h in oxygen atmosphere. The decomposition of precursor powder was followed by thermogravimetric analysis, X-ray diffraction (XRD) and Fourier transform Raman (FT-Raman). The UV-vis absorption spectroscopy measurements suggested the presence of intermediary energy levels in the band gap of structurally disordered powders. XRD, Rietveld refinement and FT-Raman revealed that the powders are free of secondary phases and crystallizes in the orthorhombic structure. (C) 2007 Elsevier Masson SAS. All rights reserved.

Synthesis of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 prepared by the soft chemical method

Single-phase Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) powders with perovskite structure were prepared by the soft chemical method. Infrared data indicates that the BST:Sn powder is carbonate free while Raman analysis has shown that the transversal (TO) and longitudinal (LO) optical modes tend to disappear with tin addition. The electron diffraction pattern of the BST:Sn powder showed an interplanar distance of 3.94 angstrom characteristic of the pseudo-cubic structure. (c) 2007 Elsevier B.V. All rights reserved.

Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.

Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 thin films grown by the soft chemical method

Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.

Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Control of retention and fatigue-free characteristics in CaBi4Ti4O15 thin films prepared by chemical method

Ferroelectric CaBi4Ti4O15 (CBTi144) thin films were deposited on Pt/Ti/SiO2/Si substrates by the polymeric precursor method. The films present a single phase of layered-structured perovskite with polar axis orientation after annealing at 700 degrees C for 2 h in static air and oxygen atmosphere. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. It is noted that the films annealed in static air showed good polarization fatigue characteristics at least up to 10(10) bipolar pulse cycles and excellent retention properties up to 10(4) s. on the other hand, oxygen atmosphere seems to be crucial in the decrease of both, fatigue and retention characteristics of the capacitors. Independently of the applied electric field, the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s. (C) 2006 Elsevier B.V. All rights reserved.

Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method

The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical conductivity of the SnO2 thin film, resulting in a nanostructured material. The nanostructured Sb-doped SnO2 thin films present high electrical conductivity, even in the presence of high porosity, supporting the hypothesis that nanostructured material must possess strong electrical conductivity. This work involves important aspects that can be applied to the development of high performance transparent conducting thin film. (C) 2003 Elsevier B.V. All rights reserved.