12 resultados para Plasma Etching
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO2 (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO2, in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.
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Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2013 Elsevier B.V. All rights reserved.
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We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Using a freeze-etch technique the cytoplasmic and plasma membrane ultrastructure of Paracoccidiodies brasiliensis yeast-phase cells was studied. The multinucleate yeast-phase cells which grow by simultaneous multiple budding, like those of Mucor sp. contain several nuclei, mitochondria, well-developed ER, small vacuoles and lipid droplets. Complex structures with no apparent connexion to the plasma membrane of P. brasiliensis usually lack inveginations, but invaginations which do occur are always rod-shaped which indicates P. brasiliensis to be of either ascomycetous or basidiomycetous origin.
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This work describes the influence of the ion bombardment on the electrical, optical and mechanical properties of polymer films deposited from radio-frequency plasmas of benzene. Irradiations were conducted using N+ at 5 x 10(19) ions/m(2), varying the ion energy, E-0, from 0 to 150 keV. Film elemental composition was determined by Rutherford backscattering spectroscopy. Electrical resistivity and hardness were obtained by the two-point probe and nanoindentation technique, respectively. Ultraviolet-visible spectroscopy was employed to investigate the optical constants of the samples. Etching rate was determined by exposure of the films to reactive oxygen plasmas. Ion bombardment induced gradual loss of H and increase in C and O concentrations with Eo. As a consequence the electrical, optical and mechanical properties were drastically affected. Interpretation of these results is proposed in terms of chain cross-linking and unsaturation. (C) 2001 Elsevier B.V. B.V. All rights reserved.
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Plasma processing of carbon fibers (CFs) is aimed to provide better contact and adhesion between individual plies without decrease in the CF mechanical resistance. This paper deals with surface modification of CFs by an atmospheric pressure dielectric barrier discharge (DBD) for enhancing the adhesion between the CF and the polymeric matrix. The scanning electron microscopy of the treated samples revealed many small particles distributed over entire surface of the fiber. These particles are product of the fiber surface etching during the DBD treatment that removes the epoxy layer covering as-received samples. The alteration of the CF surface morphology was also confirmed by the Atomic force microscopy (AFM), which indicated that the CF roughness increased as a result of the plasma treatment. The analysis of the surface chemical composition provided by X-ray photoelectron spectroscopy showed that oxygen and nitrogen atoms are incorporated onto the surface. The polar oxygen groups formed on the surface lead to the increasing of the CF surface energy. The results of interlaminar shear strength test (short beam) of CFs/polypropylene composites demonstrated a greater shear resistance of the composites made with CFs treated by DBD than the one with untreated fibers. Both the increase in surface roughness and the surface oxidation contribute for the enhancement of CF adhesion properties. © 2012 IEEE.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Amorphous silicon carbonitride (a-SiCN:H) films were deposited from hexamethyldisilazane (HMDSN) organic compounds via radio-frequency (RF) glow discharges. Afterwards the films were bombarded, from 15 to 60 min, with nitrogen ions using Plasma Immersion Ion Implantation (PIII) technique. X-ray photoelectron spectroscopy (XPS) showed that O-containing groups increased, while C-C and/or C-H groups decreased with treatment time. This result indicates chemical alterations of the polymeric films with the introduction of polar groups on the surface, which changes the surface wettability. In fact, the hydrophobic nature of a-SiCN:H films (contact angle of 100 degrees) was changed by nitrogen ion implantation and, and after aging in atmosphere air, all samples preserved the hydrophilic character (contact angle <80 degrees) independently of treatment time. The exposure of the films to oxygen plasma was performed to evaluate the etching rate, which dropped from 24% to 6% while the implantation time increased from 15 to 60 min. This data suggests that Pill increased the film structure strength, probably due to crosslinking enhancement of polymeric chains. Therefore, the treatment with nitrogen ions via Pill process was effective to modify the wettability and oxidation resistance of a-SiCN:H films. (C) 2014 Elsevier Ltd. All rights reserved.
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Pós-graduação em Odontologia Restauradora - ICT