Investigation of microwave dielectric relaxation solid state process in the antiferroelectric phase of NaNbO3 ceramics

This letter reports microwave dielectric measurements performed in the antiferroelectric phase of NaNbO3 ceramics from 100 to 450 K. Remarkable dielectric relaxation was found within the antiferroelectric phase and in the vicinity of the ferroelectric-antiferroelectric phase transition. Such dielectric relaxation process was associated with relaxations of polar nanoregions with strong relaxor-like characteristic. In addition, the microwave dielectric measurements also revealed an unexpected and unusual anomaly in the relaxation strength, which was related to a disruption of the antiferroelectric order induced by a possible AFE-AFE phase transition. (C) 2004 Elsevier Ltd. All rights reserved.

Investigation in SrTiO3-CaTiO3-PbTiO3 ternary thin films by dielectric proprieties and Raman spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramic

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

DC Electric Field Dependence of the Dielectric Constant of Pzt Thin Films Prepared by Polymeric Precursor Method

This work reports dielectric measurements performed on Pb(Zr0.53Ti0.47)O3 (PZT) thin films prepared by a polymeric precursor method. The -E curves obtained for the PZT film measured at 100 kHz, under a small ac 0.2 kV/cm signal-test and a dc scan featured a typical butterfly curve. However, the -E curves obtained for PZT film under a dc scan, with a scan rate of 0.003 V/s, shows a pronounced asymmetry. The absence of a symmetric secondary peak in -E curves could be an indication of essentially 180 domain switching.

Optical and dielectric relaxor behaviour of Ba(Zr0.25Ti0.75)O-3 ceramic explained by means of distorted clusters

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Dielectric behavior of epoxy/BaTiO3 composites using nanostructured ceramic fibers obtained by electrospinning

Composite materials made of epoxy resin and barium titanate (BT) electrospun nanostructured fibers were prepared. BT fibers were synthesized from a sol based on barium acetate, titanium isopropoxide, and poly(vinyl pyrrolidone). The fibers were heat-treated at different temperatures and characterized by X-ray diffraction, scanning electron microscopy (SEM), and Raman spectroscopy. Mats of BT fibers heat-treated at 800 C were embedded in epoxy resin into suitable molds. The composites were characterized by SEM, and dielectric measurements were performed by means of dielectric spectroscopy. The dielectric permittivity and dielectric modulus of epoxy resin/BT-fiber composites were measured for two types of samples: with the electrodes parallel and perpendicular to the BT fiber layers. Interestingly, composite samples with electrodes perpendicular to the fiber layers and a BT content as low as 2 vol % led to dielectric permittivities three times higher than that of pure epoxy resin. © 2013 American Chemical Society.

Dielectric and structural characterization of Pb1-xAxZr0.40Ti0.60O3 (A = Sr, Ca) ferroelectric ceramics

This paper reports the influence of Sr- and Ca-substitution on the structural and ferroelectric properties of Pb1-xSrxZr0.40Ti0.60O3 (PSZT) and Pb1-xCaxZr0.40Ti0.60O3 (PCZT) ceramic systems. The dielectric measurements show that these substitutions cause a diffuse behavior in the dielectric permittivity curves for all samples. According to the X-ray absorption near-edge structure (XANES) spectra collected at Ti K- and LIII-edge, when Pb was replaced by Sr or Ca, a decrease in the local distortion around Ti atoms in the TiO6 octahedron could be observed. The O K-edge XANES spectra also revealed that the hybridization between O 2p and Pb 6sp states decreased as the amount of Sr or Ca atoms increased. Based on these results, it was possible to ascertain that the ferroelectric behavior in PSZT and PCZT samples bears a close correlation to the hybridization weakening between O 2p and Pb 6 sp states. © 2013 by American Scientific Publishers.

Dielectric behaviour of CaCu3Ti4O12-epoxy composites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The self-polarization effect in Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of polyol excess on the electrical property of vegetable-polyurethane film

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Absence of relaxor-like ferroelectric phase transition in (Pb,Sr)TiO3 thin films

We have performed dielectric and micro-Raman spectroscopy measurements in the 298 - 673 K temperature range in polycrystalline Pb0.50Sr0.50TiO3 thin films prepared by a soft chemical method. The phase transition have been investigated by dielectric measurements at various frequencies during the heating cycle. It was found that the temperature corresponding to the peak value of the dielectric constant is frequency-independent, indicating a non-relaxor ferroelectric behavior. However, the dielectric constant versus temperature curves associated with the ferroelectric to paraelectric phase transition showed a broad maximum peak at around 433 K. The observed behavior is explained in terms of a diffuse phase transition. The obtained Raman spectra indicate the presence of a local symmetry disorder, due to a higher strontium concentration in the host lattice. The monitoring of some modes, conducted in the Pb0.50Sr0.50TiO3 thin films, showed that the ferroelectric tetragonal phase undergoes a transition to the paraelectric cubic phase at around 423 K. However, the Raman activity did not disappear, as would be expected from a transition to the cubic paraelectric phase. The strong Raman spectrum observed for this cubic phase is indicative that a diffuse-type phase transition is taking place. This behavior is attributed to distortions of the perovskite structure, allowing the persistence of low-symmetry phase features in cubic phase high above the transition temperature. This result is in contrast to the forbidden first-order Raman spectrum, which would be expected from a cubic paraelectric phase, such as the one observed at high temperature in pure PbTiO3 perovskite.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Electric measurements with constant current: A practical method for characterizing dielectric films

This article assesses the use of the constant current (CC) method for characterizing dielectric films. The method is based on charging the sample with a constant current (current stress) and measuring the corresponding voltage rise under the closed circuit condition. Our article shows that the CC method is an alternative to the constant voltage stressing method to study the electric properties of nonpolar, ferroelectric, and polar polymers. The method was tested by determining the dielectric constant of polytetrafluoroethylene, and investigating the electric conduction in poly(ethylene terephthalate). For the ferroelectric polymer poly(vinylidene fluoride), it is shown that hysteresis loops and the dependence of the ferroelectric polarization on the electric field can be obtained. (C) 2001 American Institute of Physics.

Optical and electrical diagnostics measurements of plasmas generated in aromatic compounds

Plasmas generated in de discharges in aromatic compounds have been used for several years in polymerization processes. The chemical kinetics developed in such a plasma environment are extremely complicated. Therefore it is extremely important to set up optical and electrical diagnostics in order to establish the kinetics of the film growth, In this work we studied de plasmas generated ill low-pressure atmospheres of benzene for different values of gas pressure and power coupled to the discharge. The pressure range varied from 0.2 to 1.0 mbar for electric power running from 4 to 25 W, the main chemical species observed within the discharge were CH, H and C. It was observed that the CH relative concentration increases continuously with the power in the range investigated. The electron temperature varied from 0.5 to 2.0 eV with the increase of the power, for a fixed value of gas pressure. The relative dielectric constant of the plasma polymerized benzene was kept around 4.8 from 100 Hz to 10 kHz, presenting a resonance near 25 kHz. This electric behaviour of the film was the same fur different conditions of polymeric film deposition, (C) 1997 Elsevier B.V. S.A.