The self-polarization effect in Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/11/2012
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Resumo |
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Processo FAPESP: 07/08534-3 Processo FAPESP: 10/16504-0 This work demonstrates the existence of a self-polarization effect in Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation. Piezoresponse Force Microscopy (PFM) and dielectric measurements were used to study the origin of this effect. The presence of only one peak shifting slightly to the negative side in the piezoresponse histogram indicates the existence of a self-polarization effect in the studied films. An increase in self-polarization was observed when the film thickness increases from 200 nm to 710 nm. The results suggest that Schottky barriers and/or mechanical coupling near the film-electrode interface are not the main mechanisms responsible for the self-polarization effect in the studied films. (c) 2012 Elsevier Ltd. All rights reserved. |
Formato |
3548-3551 |
Identificador |
http://dx.doi.org/10.1016/j.materresbull.2012.06.058 Materials Research Bulletin. Oxford: Pergamon-Elsevier B.V. Ltd, v. 47, n. 11, p. 3548-3551, 2012. 0025-5408 http://hdl.handle.net/11449/10068 10.1016/j.materresbull.2012.06.058 WOS:000311865200078 |
Idioma(s) |
eng |
Publicador |
Pergamon-Elsevier B.V. Ltd |
Relação |
Materials Research Bulletin |
Direitos |
closedAccess |
Palavras-Chave | #Thin films #Atomic force microscopy #Dielectric properties |
Tipo |
info:eu-repo/semantics/article |