The self-polarization effect in Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation


Autoria(s): Lima, E. C.; Araujo, E. B.; Bdikin, I. K.; Kholkin, A. L.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/11/2012

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Processo FAPESP: 07/08534-3

Processo FAPESP: 10/16504-0

This work demonstrates the existence of a self-polarization effect in Pb(Zr0.50Ti0.50)O-3 thin films with no preferential orientation. Piezoresponse Force Microscopy (PFM) and dielectric measurements were used to study the origin of this effect. The presence of only one peak shifting slightly to the negative side in the piezoresponse histogram indicates the existence of a self-polarization effect in the studied films. An increase in self-polarization was observed when the film thickness increases from 200 nm to 710 nm. The results suggest that Schottky barriers and/or mechanical coupling near the film-electrode interface are not the main mechanisms responsible for the self-polarization effect in the studied films. (c) 2012 Elsevier Ltd. All rights reserved.

Formato

3548-3551

Identificador

http://dx.doi.org/10.1016/j.materresbull.2012.06.058

Materials Research Bulletin. Oxford: Pergamon-Elsevier B.V. Ltd, v. 47, n. 11, p. 3548-3551, 2012.

0025-5408

http://hdl.handle.net/11449/10068

10.1016/j.materresbull.2012.06.058

WOS:000311865200078

Idioma(s)

eng

Publicador

Pergamon-Elsevier B.V. Ltd

Relação

Materials Research Bulletin

Direitos

closedAccess

Palavras-Chave #Thin films #Atomic force microscopy #Dielectric properties
Tipo

info:eu-repo/semantics/article