32 resultados para Cubic TaN
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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A floração nos citros, assim como em outras fruteiras, é um dos fatores determinantes para a produção. A possibilidade de inibição ou redução da florada normal e alteração da época de produção para a lima 'Tahiti' é fator primordial para determinar sua rentabilidade econômica. O presente trabalho teve como objetivo avaliar o efeito do ácido giberélico sobre a florada, número de flores formadas, da lima ácida 'Tahiti', nas condições do Estado de São Paulo durante dois anos, buscando inibir a florada normal e observar o efeito desta inibição sobre produções temporãs. O delineamento experimental foi em blocos casualizados (5 blocos) com 3 plantas por tratamento. Foi utilizada uma planta como bordadura entre os tratamentos e uma linha de plantas entre os blocos. Os tratamentos foram: testemunha, 20, 40 e 80 mg/L de ácido giberélico (AG3) + 10 ml/L de espalhante adesivo, e o pH da água utilizada foi 6,2. As plantas foram tratadas com ácido giberélico durante o inverno (estação seca) após 50 dias sem irrigação no primeiro ano e 60 dias no segundo. O ácido giberélico reduziu o número de flores formadas (-81%) e aumentou a produção de frutos temporões (+59,77% ou +16,04 kg/pl).
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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This work presents an application for the plate analysis formulation by BEM where 3 boundary equations are used, written for the transverse displacement w and the normal and tangential derivatives partial derivativew/partial derivativen and partial derivativew/partial derivatives. In this extension, the transverse displacement w is approximated by a cubic polynomial and, as a consequence, partial derivativew/partial derivatives has a quadratic approximation. This alternative BEM formulation improves the analysis of thin plates, when compared to the formulation using the linear approximation for the displacements, mainly in the obtaining of the bending moments at the boundary of the plate. The implementation of this proposal to the computational codes is simple. (C) 2004 Published by Elsevier Ltd.
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Non-isothermal dielectric analysis (DEA) and differential scanning calorimetry (DSC) techniques were used to study the epoxy nanocomposites prepared by reacting 1,3,5,7,9,11,13,15-octa[dimethylsiloxypropylglycidylether] pentaciclo [9.5.1.1(3,9).1(5,15).1(7,13)] octasilsesquioxane (ODPG) with methylenedianiline (MDA). Loss factor (epsilon) and activation energy were calculated by DEA. The relationships between the loss factor, the activation energy, the structure of the network, and the mechanical properties were investigated. Activation energies determined by DEA and DSC, heat of polymerization, fracture toughness and tensile modulus show the same profile for mechanical properties with respect to ODPG content.
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We evaluate the cubic interaction term in the action of open bosonic string field theory for Schnabl's solution written in terms of Bernoulli numbers. This computation provides us with new evidence for the fact that the string field equation of motion is satisfied when it is contracted with the solution itself.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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In certain Mott-insulating dimerized antiferromagnets, triplet excitations of the paramagnetic phase display both three-particle and four-particle interactions. When such a magnet undergoes a quantum phase transition into a magnetically ordered state, the three-particle interaction becomes part of the critical theory provided that the lattice ordering wave vector is zero. One microscopic example is the staggered-dimer antiferromagnet on the square lattice, for which deviations from O(3) universality have been reported in numerical studies. Using both symmetry arguments and microscopic calculations, we show that a nontrivial cubic term arises in the relevant order-parameter quantum field theory, and we assess its consequences using a combination of analytical and numerical methods. We also present finite-temperature quantum Monte Carlo data for the staggered-dimer antiferromagnet which complement recently published results. The data can be consistently interpreted in terms of critical exponents identical to that of the standard O(3) universality class, but with anomalously large corrections to scaling. We argue that the cubic interaction of critical triplons, although irrelevant in two spatial dimensions, is responsible for the leading corrections to scaling due to its small scaling dimension.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.
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The crystallization process of lead titanate (PT) prepared using the polymeric precursor method was investigated using X-ray diffractometry, Raman spectroscopy, electron microscopy, and X-ray absorption spectroscopy techniques. The results showed that amorphous PT was formed by an O-Ti-O structure composed of fivefold and sixfold oxygen-coordinated titanium. The local structure of the amorphous PT phase was similar to that of the cubic PT phase, i.e., similar coordination number and similar bond lengths, leading to a topotactic-like transformation during the phase transformation from amorphous to cubic perovskite PT. Because of the low crystallization temperature, every transformation observed during the crystallization process was associated with a short-range rearrangement process.
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Single-phase perovskite structure BaZrxTi1-xO3 (BZT) (0.05less than or equal toxless than or equal to0.25) thin films were deposited on Pt-Ti-SiO2-Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZrxTi1-xO3 thin films, corroborate to the structural change caused by the zirconium doping. on the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan delta<0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively. (C) 2004 American Institute of Physics.
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Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.
Resumo:
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.