25 resultados para CE3

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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This paper reports on time-resolved emission and excitation spectra measurement studies of Gd2SiO5:Ce3+ in powder or pellet samples, from spherical particles, in order to assign the Ce3+ ion transitions into two different symmetry sites. Samples were obtained from solid-state reaction of the spherical particles oxides, SiO2 and Gd2O3:Ce3+. From time-resolved spectroscopy measurements Ce3+ ion transitions occupying the two different gadolinium crystallographic sites in Gd2SiO5 were separated and assigned. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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This work studied the influence of the rare earth (Ce3+ and Ce4+) elements concentration in polysiloxane flints deposited on copper by dip-coating process, and evaluated their resistance in a 3.5 wt.% NaCl medium. Classical electrochemistry techniques were used as open circuit potential, polarization curves and electrochemical impedance spectroscopy. The results revealed that by adding low concentration of Ce4+ ions, the coating prevents the electrolyte uptake any longer retarding the substrate degradation consequently. ©The Electrochemical Society.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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A variação da condutividade elétrica da solução nutritiva altera a absorção de água e nutrientes pelas plantas, interferindo no metabolismo e, consequentemente, na produção das mesmas. Este trabalho, conduzido no período de agosto a outubro de 1999, avaliou o efeito da condutividade elétrica (CE) sobre a produção e desenvolvimento de alface americana de cabeça crespa, cultivar Ryder em hidroponia. As tendências de variação da condutividade elétrica do meio nutritivo, durante o desenvolvimento da alface, foram também avaliadas. Foi utilizado o delineamento inteiramente casualizado com seis repetições e três tratamentos, constituídos pelas condutividade elétricas: CE1= 1,46, CE2= 2,46 e CE3= 4,21 (± 0,24) mS cm-1. O diâmetro e altura da cabeça e peso seco da raiz não foram influenciados pelas condutividades elétricas da solução nutritiva. Os maiores pesos do material fresco e seco foram conseguidos com CE 2,46 (± 0,24) mS cm-1. Todos os tratamentos apresentaram a tendência de diminuição da condutividade elétrica, durante o cultivo da alface verificando-se que a condutividade elétrica teve influência sobre as características de produção da alface americana.

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The work aimed to study the development of Tabebuia chrysotricha Standl. seedlings injunction of different substrate and different fertilization solutions. To compose the substrate it was used fibrous and granulated coconut fiber obtaining the following treatments: S1- 100% fibrous, S2- 60% fibrous and 40% granulated, S3- 40% fibrous and 60% granulated and S4- 100% granulated. The basis fertilization was the same for all treatments and the solutions of fertilization varied in order to obtain solutions with the following electric conductivities: EC1- 1.06 dS m(-1), EC2- 2.12 dS m(-1), EC3- 3.2 dS m(-1) and EC4- 4.25 dS m(-1). The propagative material was sowed directly in plastic containers (120mL) with the respective substrates. The fertilization was received through sub irrigation once a week, until the seedlings reached 20cm of height approximately. The chemical analyses of the substrate (EC and pH), through aqueous extraction method 1:1.5 (1 substrate: 1.5 deionized water), the analyses of aerial part height, stein diameter and pairs true leaves number, as well as the weight of total dry, matter, were accomplished each 15 days. In almost every analysis, the substrate with granulated coconut fiber, as well as the smallest EC (1.06 e 2.12 dS m(-1)) of fertilization solutions,formed seedlings with higher averages, indicating faster growth. In the conditions of this experiment, the production of T. chrysotricha seedlings was better in granulated coconut fiber substrate and fertilizer solutions with EC of 1.06 dS m(-1), appreciating the estimated characteristics.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and x-ray absorption spectroscopy (XAS) techniques have been applied to characterize the surface composition and structure of a series of CuO-TiO2-CeO2 catalysts. For a small loading of cerium, ceria was mainly dispersed on the titania surface and a minor amount of CeO2 crystallite appeared. At higher loading of cerium, the CeO2 phase increased and the atomic Ce/Ti ratio values were smaller than the nominal composition, as a consequence of cerium agglomeration. This result suggests that only a fraction of cerium can be spread on the titania surface. For titanium-based mixed oxide, we observed that cerium is found as Ce3+ uniquely on the surface. The atomic Cu/(Ce+Ti) ratio values showed no influence from cerium concentration on the dispersion of copper, although the copper on the surface was shown to be dependent on the cerium species. For samples with a high amount of cerium, XPS analysis indicated the raise of second titanium species due cerium with spin-orbit components at higher binding energies than those presented by Ti4+ in a tetragonal structure. The structural results obtained by XAS are consistent with those obtained by XRD and XPS. (C) 2001 American Vacuum Society.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)