EFFECT of DIFFERENT SOLID AMOUNTS IN THE PHYSICAL and MICROSCOPICAL PROPERTIES of SiC POROUS CERAMICS

The presence of pores in ceramics is directly related to the chosen forming process. So, in the starch consolidation method, the ceramics show, after burning, pores with morphology similar to that presented by this organic material. on the other hand, the increase in solid load leads up to alterations in dispersion viscosity, increasing the thermal stresses during drying and sintering processes. In order to verify the solid percentage influence in ceramic final properties, samples were prepared with silicon carbide in different compositions using or not starch as binder agent and pore forming element. The characterization of the ceramic pieces was performed by superficial roughness measurements, porosity besides by optical and scanning electron microscopy. The results showed ceramics with SiC and starch presented physical and microscopic properties slightly higher in relation to those with only ceramic powder in their composition. The presence of organic material, agglomerated and foam during the forming were essential for the final properties of the studied samples.

2,2,6-Trimethyl-5-[2-(4-methylphenyl)ethynyl]-4H-1,3-dioxin-4-one

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Formation of SiC by radiative association

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Obtenção in situ do compósito alfa-SiAlON-SiC

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Development of alpha-SiAlON-SiC ceramic composites by liquid phase sintering

In this work, in situ alpha-SiAlON-SiC ceramic composites were obtained,by, liquid phase sintering, using SiC as reinforcement. Different beta-SiC powder contents (0-20 wt.%), were added to Si3N4-AlN-RE2O3. powder mixtures, and compacted by cold isostatic pressing. The samples were sintered at 1950 degrees C for 1 h, in N-2 atmosphere. Sintered: samples were characterized by relative density, weight loss, X-ray diffraction and scanning electron microscopy. Furthermore, mechanical properties such as hardness and fracture toughness were determined by Vickers indentation method. Lattice parameters of the alpha' phase did not considerably change with increase of SiC content. However, morphology, average grain size and aspect ratio of the alpha' phase were considerably changed with increase of the SiC content. These behavior influences significantly the mechanical properties of this hard ceramic composite. (C) 2006 Elsevier Ltd. All rights reserved.

Stacking faults in SiCf/SiC composite obtained by chemical vapor reaction process

SiC fiber-reinforced SiC matrix composite (SiCf/SiC) is one of the leading candidates in ceramic materials for engineering applications due to its unique combination of properties such as high thermal conductivity, high resistance to corrosion and working conditions. Fiber-reinforced composites are materials which exhibit a significant improvement in properties like ductility in comparison to the monolithic SiC ceramic. The SiCf/SiC composite was obtained from a C/C composite precursor using convertion reaction under high temperature and controlled atmosphere. In this work, SiC phase presented the stacking faults in the structure, being not possible to calculate the unit cell size, symmetry and bond lengths but it seem equal card number 29-1129 of JCPDS.

A new hybrid polyhedral cubic silsesquioxane chemically modified with 4-amino-5-(4-pyridyl)-4H-1,2,4-triazole-3-thiol (APTT) and copper hexacyanoferrate(III) for voltammetric determination of nitrite

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Análise crítica dos critérios diagnósticos da Sociedade Internacional de Cefaléia (SIC - 1988 e SIC - 2003), das cefaléias na infância e na adolescência

Pós-graduação em Bases Gerais da Cirurgia - FMB

Estudo de cerâmicas de SiC e Al2O3 tratadas por expansor de plasma de nitrogênio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A Silsesquioxane Organically Modified with 4-Amino-5-(4-pyridyl)-4H-1,2,4-triazole-3-thiol: Thermal Behavior and Its Electrochemical Detection of Sulfhydryl Compounds

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Corrosion prevention for Al2O3/SiC/C/MgAl2O4 based ceramics by means of impregnation with cerium-carrying solution

A cerium-carrying solution was developed so as to aprtially fill the open porosity of Al2O3/SiC/C/MgAl2O4 based refractory lining microstructure used in torpedo ladles, thereby enhancing wear resistance. The protection mchanism was cleared up and introduced from the impregnation technique using a cerium-carrying solution.

Sílica gel organofuncionalizada com 4-amino-5-(4-piridil) 4H-1,2,4-triazol-3-tiol (aptt): Propriedades adsortivas e eletroanalíticas

Pós-graduação em Ciência dos Materiais - FEIS

Voltammetric Behavior of a Chemically Modified Silsesquioxane with 4-Amino-5-Phenyl-4h-[1,2,4]-Triazole-3-Thiol and its Application for Detection of L-Dopamine

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Anodization mechanism on SiC nanoparticle reinforced al matrix composites produced by power metallurgy

Specimens of aluminum-based composites reinforced by silicon carbide nanoparticles (Al/SiCnp) produced by powder metallurgy (PM) were anodized under voltage control in tartaric-sulfuric acid (TSA). In this work, the influence of the amount of SiCnp on the film growth during anodizing was investigated. The current density versus time response and the morphology of the porous alumina film formed at the composite surface are compared to those concerning a commercial aluminum alloy (AA1050) anodized under the same conditions. The processing method of the aluminum alloys influences the efficiency of the anodizing process, leading to a lower thicknesses for the unreinforced Al-PM alloy regarding the AA1050. The current density versus time response is strongly dependent on the amount of SiCnp. The current peaks and the steady-state current density recorded at each voltage step increases with the SiCnp volume fraction due to the oxidation of the SiCnp. The formation mechanism of the anodic film on Al/SiCnp composites is different from that occurring in AA1050, partly due the heterogeneous distribution of the reinforcement particles in the metallic matrix, but also to the entrapment of SiCnp in the anodic film.

Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films

Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.