Tailoring of heterostructures in a SnO2/TiO2 system by the oriented attachment mechanism

In order to verify the possibility of forming a heterostructure-i.e., a nanoparticle tailored by the junction of two or more different materials-through the oriented attachment (OA) mechanism, experiments with rutile TiO2 and cassiterite SnO2 as candidate materials were done, since they have similar crystallographic parameters. The experiments were carried out in hydrothermal conditions and in an in situ observation at the high resolution transmission electron microscopy. The results showed the formation of TiO2/SnO2 heterostructures, confirming the coexistence of rotation-alignment and oriented collision mechanisms, hypothesis of OA behavior proposed in previous theoretical works.

SAXS study of gelation, aging and drying of silica-polypropyleneglycol hybrid materials

New silica-polypropyleneglycol ormosils (organically modified silicates) with covalent bends between the organic (polymer) and inorganic (silica) phases have been prepared by the sol-gel process. Their structural evolution during sol formation, sol-gel transition, gel aging and drying has been studied in situ by small-angle X-ray scattering (SAXS). The experimental SAXS curves corresponding to sols and gels exhibit features expected from fractal objects. Clusters of size around 55 Angstrom with an initial fractal dimension D = 2.4 are formed in the sol. They are constituted of small primary silica particles chemically crosslinked at the end of the polymer chains. A strong liquid-like spatial correlation between the silica particles develops during drying due to the shrinkage of the polymeric network induced by water and ethanol evaporation. The continuous increase in SAXS intensity during drying, while the interparticle distance remains constant, is a consequence of the progressive growth of the dry fraction of the total volume. After drying, the gel structure consists of a rather compact arrangement of silica particles embedded in the polypropyleneglycol matrix.

Mechanism of conduction in doped polyaniline

The conductivity of H2SiF6-doped emeraldine polymers is studied as a function of temperature in the range 50 less than or equal to T less than or equal to 180 K. The dopant concentration of the samples varies between 0.1 M and 1.0 M. The temperature dependence of the do electrical conductivity gives evidence for a transport mechanism based on variable-range hopping in three dimensions. Using Mott's formula for the de conductivity, physically meaningful values of the density of states at the Fermi energy, the hopping energy and hopping distance are calculated.

Structural and magnetic transformation of monodispersed iron oxide particles in a reducing atmosphere

Uniform metal iron ellipsoidal particles of around 200 nm in length were obtained by reduction and passivation of alumina-coated alpha-Fe2O3 (hematite) particles under different conditions of temperature and hydrogen flow rate. The monodispersed hematite particles were prepared by the controlled hydrolysis of ferric sulfate and further coated with a homogeneous thin layer of Al2O3 by careful selection of the experimental conditions, mainly pH and aluminum salt concentration. The reduction mechanism of alpha-Fe2O3 into alpha-Fe was followed by x-ray and electron diffraction, and also by the measurements of the irreversible magnetic susceptibility. The transformation was found to be topotactic with the [001] direction of hematite particles, which lies along the long axis of the particles, becoming the [111] direction of magnetite and finally the [111] direction of metal iron. Temperature and hydrogen flow rate during the reduction have been found to be important parameters, which determine not only the degree of reduction but also the crystallite size of the final particles. Magnetic characterization of the samples shows that the only parameters affected by the crystallite size are the saturation magnetization and magnetic time-dependence effect, i.e., activation volume. (C) 2002 American Institute of Physics.

Dynamics of Tm-Ho energy transfer and deactivation of the F-3(4) low level of thulium in fluorozirconate glasses

The mechanism involved in the Tm3+ (F-3(4))-->Ho3+ (I-5(7)) energy transfer and Tm3+ (H-3(4), H-3(6))-->Tm3+ (F-3(4), F-3(4)) cross relaxation as a function of the donor and acceptor concentrations was investigated in Tm-Ho-codoped fluorozirconate glasses. The experimental transfer rates were determined for the Tm-->Ho energy transfer from the best fit of the acceptor luminescence decay using an expression which takes into account the Inokuti-Hirayama model and localized donor-to-acceptor interaction solution. The original acceptor solution derived from the Inokuti-Hirayama model fits well the acceptor luminescence transient only for low-concentrated systems. The results showed that a fast excitation diffusion that occurs in a very short time (t<Tm cross relaxation and Tm-->Ho energy transfer ions from H-3(4) and F-3(4) thulium states, respectively. (C) 2004 American Institute of Physics.

Retention characteristics in Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt/Ti/SiO2/Si substrates by the polymeric precursor method. The films present c-axis preferred orientation after annealing at 700 degrees C for 2 h in conventional furnace. All the capacitors showed good polarization fatigue characteristics at least up to 1x10(10) bipolar pulse cycles and excellent retention properties up to 1x10(4) s. We found that the polarization loss is insignificant with five write/read voltages at a waiting time of 10 000 S. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s. (C) 2005 American Institute of Physics.

DYNAMICAL SCALING IN FRAGMENTATION

The dynamics of a fragmentation model is examined from the point of view of numerical simulation and rate equations. The model includes effects of temperature. The number n (s,t) of fragments of size s at time t is obtained and is found to obey the scaling form n(s,t) approximately s(-tau)t(omegasgamma e(-rhot) f(s/t(z)) where f(x) is a crossover function satisfying f(x) congruent-to 1 for x much less than and f(x) much less than 1 for x much greater than 1. The dependence of the critical exponents tau, omega, gamma and z on space dimensionality d is studied from d = 1 to 5. The result of the dynamics on fractal and nonfractal objects as well as on square and triangular lattices is also examined.

Efficient energy upconversion emission in Tm3+/Yb3+-codoped TeO2-based optical glasses excited at 1.064 mu m

Efficient energy upconversion of cw radiation at 1.064 mum into blue, red, and near infrared emission in Tm3+-doped Yb3+-sensitized 60TeO(2)-10GeO(2)-10K(2)O-10Li(2)O-10Nb(2)O(5) glasses is reported. Intense blue upconversion luminescence at 485 nm corresponding to the Tm3+ (1)G(4)--> H-3(6) transition with a measured absolute power of 0.1 muW for 800 mW excitation power at room temperature is observed. The experimental results also revealed a sevenfold enhancement in the upconversion efficiency when the sample was heated from room temperature to 235 degreesC yielding 0.7 muW of blue absolute fluorescence power for 800 mW pump power. High brightness emission around 800 nm (F-3(4)--> H-3(6)) in addition to a less intense 655 nm ((1)G(4)--> H-3(4) and F-3(2,3)--> H-3(6)) fluorescence is also recorded. The energy upconversion excitation mechanism for thulium emitting levels is assigned to multiphonon-assisted anti-Stokes excitation of the ytterbium-sensitizer followed by multiphonon-assisted sequential energy-transfer processes. (C) 2001 American Institute of Physics.

Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application

70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.

Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic: An oxide semiconductor at high temperature

Bi1.5ZnSb1.5O7 dielectric ceramic with pyrochlore structure was investigated by impedance spectroscopy from 400 to 750 degreesC. Pyrochlore was synthesized by the polymeric precursor method, a chemical synthesis route derived from Pechini's method. The grain or bulk resistance exhibits a sensor temperature characteristic, being a thermistor with a negative temperature coefficient (NTC). Only a single region was identified on the resistance curve investigated. The NTC thermistor characteristic parameter (beta) is equal to 7140 degreesC, in the temperature range investigated. The temperature coefficient of the resistance (alpha) was derived, being equal to -4.46x10(-2) degreesC(-1) at 400 degreesC. The conduction mechanism and relaxation are discussed. (C) 2003 American Institute of Physics.

Negative nonlinear absorption in Er3+-doped fluoroindate glass

We report the observation of negative nonlinear absorption in fluoroindate glasses doped with erbium ions. The pumping wavelength is 800 nm which is doubly resonant with Er3+ ions transitions. A large nonlinear intensity dependence of the optical transmittance and strong upconverted fluorescence are obtained. The dependence of the upconverted fluorescence intensity with the laser power is described by a system of coupled-rate equations for the energy levels' populations. (C) 1998 American Institute of Physics. [S0021-8979(98)07816-5].

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.

Fatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor method

Fatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 degreesC for 10 min. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 muC/cm(2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 10(10) read/write switching cycles. (C) 2004 American Institute of Physics.

Photoluminescence in amorphous TiO2-PbO systems

Photoluminescence (PL) at room temperature has been achieved in amorphous thin films and powders of the TiO2-PbO system. They were prepared by the polymeric precursor method with [PbO]/[TiO2] molar ratios ranging from 0.0 to 1.0. The energy position of maximum PL emission and the PL intensity showed dependence on Pb concentration. The Pb addition suggests an increase in the number of nonbridging oxygens (NBO) in the amorphous TiO2 network. These results support the relationship between photoluminescence and structure in TiO2-based amorphous materials.

Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy

This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.