Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Erbium-activated HfO2-based waveguides for photonics

70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.

Nucleation and crystallization of titania nanoparticles in silica titania planar waveguides: A study by low frequency Raman scattering

SiO2 (1-x) - TiO2 (x) waveguides, with the mole fraction x in the range 0.07 - 0.20 and thickness of about 0.4 μm, were deposited on silica substrates by a dip-coating technique. The thermal treatments at 700-900°C, used to fully densify the xerogels, produce nucleation of TiO2 nanocrystals even for the lowest TiO2 content. The nucleation of TiO2 nanocrystals and their growth by thermal annealing up to 1300°C were studied by waveguide Raman spectroscopy, for the SiO2 (0.8) - TiO2 (0.2) composition. By increasing the annealing temperature, the Raman spectrum evolves from that typical of the silica-titania glass to that of anatase, but brookite phase is dominant at intermediate temperatures. In the low. frequency region (5-50 cm-1) of the Raman spectra, acoustic vibrations of the nanocrystals are observed. From the measured line shapes, we can deduce the size distribution of the particles. The results are compared with those obtained from the line widths in the X-ray diffraction patterns. Nanocrystals with a mean size in the range 4-20 nm are obtained, by thermal annealing in a corresponding range of 800-1300°C.

Double optical monitoring of time-dependent film formation

A brief overview of optical monitoring for vacuum and wet bench film deposition processes is presented. Interferometric and polarimetric measurements are combined with regard to simultaneous real-time monitoring of refractive index and physical thickness. Monitor stability and accuracy are verified with transparent oil standards. This double optical technique is applied to dip coating with a multi-component Zirconyl Chloride aqueous solution, whose time varying refractive index and physical thickness curves indicate significant sensitivity to changes of film flow properties during the process.

Strategies for developing NADH detector based on meldola blue in different immobilization methods: A comparative study

A comparative study was accomplished between two immobilization methodologies for the meldola's blue (MB), used to decrease the oxidation potential of NADH. The study was performed with glassy carbon electrode by electropolymerization of pyrrole and MB through the technique of cyclic voltammetry being evaluated the effect of the number of cycles to define the thickness and the stability of the film. With 25 cycles it was obtained the best result. They were also investigated the modification of the graphite electrode with film formed by the system sol-gel PPO 300 or PPO 4000 for the dip-coating, through two methods: occlusion and adsorption. The best method was it of adsorption of MB during 10 min, following by deposit of the film PPO 300, favored for the time of drying (24 hours). The adsorption of MB followed by PPO 300 deposition presented broader linear range than PPy methodology. ©2006 Sociedade Brasileira de Química.

Effect of scandium on the structural and photocatalytic properties of titanium dioxide thin films

Pure and scandium doped-TiO2 thin films were prepared by the sol-gel process and coated by dip coating. The effects of scandium on the phase formation, optical properties and photoactivity of the TiO2 thin films were investigated. The lattice parameters and the crystallinity of the anatase phase, characterized by the Rietveld method, demonstrated that scandium doping affected the structural parameters and crystallinity of the films, modifying the absorption edge. A direct correlation was found between band gap energy and photodegradation efficiency, with lower values of band gap energy augmenting this efficiency. Moreover, a significant improvement in the catalyst's photodegradation efficiency was attained with a scandium concentration of 5.0 mol%. © 2007 Springer Science+Business Media, LLC.

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films

Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy

Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility. © 2012 Elsevier B.V. All rights reserved.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Carbon nanotube-reinforced siloxane-PMMA hybrid coatings with high corrosion resistance

Siloxane-polymethyl methacrylate hybrid films containing functionalized multiwall carbon nanotubes (CNTs) were deposited by dip-coating on carbon steel substrates from a sol prepared by radical polymerization of methyl methacrylate and 3-methacryloxy propyl-trimethoxysilane, followed by hydrolytic co-polycondensation of tetraethoxysilane. The correlation between the structural properties and corrosion protection efficiency was studied as a function of the molar ratio of nanotubes carbon to silicon, varied in the range between 0.1% and 5%. 29Si nuclear magnetic resonance and thermogravimetric measurements have shown that hybrids containing carbon nanotubes have a similar degree of polycondensation and thermal stability as the undoped matrix and exhibit and excellent adhesion to the substrate. Microscopy and X-ray photoelectron spectroscopy results revealed a very good dispersion of carbon nanotubes in the hybrid matrix and the presence of carboxylic groups allowing covalent bonding with the end-siloxane nodes. Potentiodynamic polarization curves and electrochemical impedance spectroscopy results demonstrate that CNTs containing coatings maintain the excellent corrosion protection efficiency of the hybrids, showing even a superior performance in acidic solution. The nanocomposite structure acts as efficient corrosion barrier, increasing the total impedance by 4 orders of magnitude and reducing the current densities by more than 3 orders of magnitude, compared to the bare steel electrode. © 2013 Elsevier B.V. All rights reserved.

Photoelectrochemical properties of FTO/m-BiVO4 electrode in different electrolytes solutions under visible light irradiation

Photoelectrochemical properties of FTO/BiVO4 electrode were investigated in different electrolytic solutions, potassium chloride (KCl) and sodium sulphate (Na2SO4), and under visible light irradiation condition. In order to accomplish that, an FTO/BiVO4 electrode was built by combining the solution combustion synthesis technique with the dip-coating deposition process. The morphology and structure of the BiVO4 electrode were investigated through X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, and Raman spectroscopy. Photoelectrochemical properties were analyzed through chronoamperometry measurements. Results have shown that the FTO/BiVO4 electrode presents higher electroactivity in the electrolyte Na2SO4, leading to better current stabilization, response time, and photoinduced current density, when compared to KCl electrolyte. Besides, this electrode shows excellent performance for methylene blue degradation under visible light irradiation condition. In Na2SO4, the electrode has shown higher degradation rate, 51 %, in contrast to 44 % in KCl, plus higher rate constant, 174 × 10-4 min-1 compared to 150 × 10-4 min-1 in KCl. Results presented in this communication leads to the indication of BiVO4 thin films as alternate materials to use in heterogeneous photoelectrocatalysis, more specifically in decontamination of surface water. © 2013 Springer-Verlag Berlin Heidelberg.

Investigação de propriedades de filmes finos de Sn'O IND. 2' e 'Al IND. 2''O IND. 3' para aplicação em dispositivos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Uma contribuição para o estudo da estrutura de bandas de energia em filmes finos de 'SNO IND.2'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Mecanismos de transporte elétrico excitados termicamente em Sn 'O IND. 2' dopado com Ce

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo da fotossensibilidade de materiais híbridos de sílica dopados com heteropoliânions de tungstênio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)