Electrical characterization of in situ polymerized polyaniline thin films

The alternating conductivity, sigma*(f) = sigma'(f) + i sigma ''(f), of in situ polymerized polyaniline thin films doped with hydrochloric acid, deposited on top of an interdigitated gold line array previously deposited on glass substrates, were measured in the frequency (f) range between 0.1 Hz to 10 MHz and in the temperature range from 100 to 430 K. The results for sigma'(f) are typical of a disordered solid material: for frequencies lower than a certain hopping frequency gamma(hop), log[sigma'(f)] is frequency-independent rising almost linearly for in logf > gamma(hop). A master curve was thus obtained by plotting the real component of the conductivity using normalized scales sigma'(f)/sigma(dc) and f/gamma(hop) which is indicative of a single process operating in the whole frequency range. An expression encompassing the conduction through a disordered structure taken from previous random free energy barrier model for hopping carriers, as well a dielectric function to represent the capacitive behavior of the PAni was employed to fit the experimental results. The dielectric constant and activation energy for hopping carriers were obtained as function of the polymer doping level. (c) 2007 Elsevier B.V. All rights reserved.

Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films

Strong interest in developing technology for visual information. stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc-oxide films are suitable for electroluminescence applications. Two different devices were assembled as lTO/LiF/ZnO:RE/LiF/Al or ITO/SiO2/ZnO:RE/SiO2/Al, where ZnO:RE is a film of zinc oxide containing 10 at% of Tb3+ or Tm3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650 nm assigned to ZnO, also emission lines from Tb3+ at 484 nm (D-5(4) -> F-7(6)), 543 nm (D-5(4) -> F-7(6)), and 589 nm (D-5(4) -> F-7(4)), or from Tm3+ at 478 nm ((1)G(4) -> H-3(6)), and 511 mn (D-1(2) -> H-3(5)) were detected. Intensity of emission as function of applied voltage and current-voltage characteristic are shown and discussed. (c) 2005 Elsevier B.V. All rights reserved.

Efficient Dye-Sensitized Solar Cells Based on the Combination of ZnO Nanorods and Microflowers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Wettability and photodegradation activity of sol-gel dip-coated zinc oxide films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Langmuir-Blodgett films incorporating an ionic europium complex

Langmuir-Blodgett (LB) technique is a powerful tool to fabricate ultrathin films with highly ordered structures and controllable molecular array for efficient energy and electron transfer, allowing the construction of devices at molecular level. One method to obtain LB films consists in the mixture of classical film-forming molecules, for example Stearic Acid (SA) and functional metal complex. In this work NH(4)[Eu(bmdm)(4)], where the organic ligand bmdm is (butyl methoxy-dibenzoyl-methane) or (1-(4-methoxyphenyl)-3-(4-tert-butylphenyl)propane-1,3-dione) was used to build up Langmuir and LB films. Langmuir isotherms were obtained from (i) NH(4)[Eu(bmdm)(4)] complex and (ii) NH(4)[Eu(bmdm)(4)]/SA (1:1). Results indicated that (i) form multilayer structure; however the surface pressure was insufficient to obtain LB films, and (ii) can easily reproduce and build LB films. The dependence of number of layers in the UV absorption spectra suggest that the complex did not hydrolyze or show decomposition, UV spectral differences observed between the solution and the LB film indicate that the complex has a highly ordered arrangement in the film and the complex has an interaction with SA. Excitation spectra confirm a ligand-europium energy transfer mechanism. The transition lines of Eu(3+) ion were observed in emission spectra of all films, the photoluminescence spectra indicate a fluorescence enhanced effect with the number of LB layers. (C) 2009 Elsevier B.V. All rights reserved.

Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.

The effects of pinning on critical currents of superconducting films

Using molecular dynamics simulations, we analyze the effects of artificial periodic arrays of pinning sites on the critical current of superconducting thin films as a function of vortex density. We analyze two types of periodic pinning array: hexagonal and Kagomé. For the Kagome pinning network we make calculations using two directions of transport current: along and perpendicular to the main axis of the lattice. Our results show that the hexagonal pinning array presents higher critical currents than the Kagomé and random pinning configuration for all vortex densities. In addition, the Kagomé networks show anisotropy in their transport properties. © 2012 Springer Science+Business Media, LLC.

Morphology of flux avalanches in patterned superconducting films

It is well known that under certain circumstances, magnetic fields applied perpendicularly to the plane of superconducting films can trigger flux avalanches. In such cases, the penetration has a tree-like profile. However, in samples where a regular array of antidots, ADs, is present, the avalanches follow the rows of ADs as if they were guiding lines for the abrupt penetration. In this work, we used the magnetooptical imaging technique to study the morphology of flux avalanches in two Nb films with a square lattice of square ADs, each one with a different lateral size, and a plain film for reference. We show that the morphology of the flux avalanches is greatly influenced by the size of the interstitial region. © 2012 Springer Science+Business Media, LLC.

Role of interstitial pinning in the dynamical phases of vortices in superconducting films

We analyze the vortex dynamics in superconducting thin films with a periodic array of pinning centers. In particular, we study the effect of anisotropy for a Kagomé pinning network when longitudinal and transverse transport currents are applied. By solving the equations of motion for the vortex array numerically at zero temperature, we find different phases for the vortex dynamics, depending on the pinning and driving force. An unusual sequence of peaks for driving force along and perpendicular to the main lattice axes is observed for the differential resistance, reflecting the anisotropy of the transport properties and the complex behavior of the vortex system. This behavior may be understood in terms of interstitial pinning vacancies, which create channels of vortices with different pinning strengths. © 2012 Springer Science+Business Media, LLC.

Caracterização de filmes finos de ZnO dopados com Al e Mn depositados em substrato vítreo pelo método de Spray Pirólise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filmes finos de ZnO como óxidos condutores transparentes aplicados à células solares

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Células solares de ZnO:Ga nanocristalino sensibilizado por corante

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeito da pressão na obtenção e nas propriedades óticas e sensoras de filmes finos à base de 'SN''O IND. 2' com a adição de 'ZNO'

Pós-graduação em Química - IQ

Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrophoretic deposition of (Zn, Nb)SnO2-films varistor superficially modified with Cr3+

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)